K. Baker, J. Van, and . Beers, Shmoo plotting: the black art of IC testing, IEEE Design & Test of Computers, vol.14, issue.3, pp.90-97, 1997.
DOI : 10.1109/54.606005

S. Barde, R. Eco_et, J. Costeraste, A. Meygret, and X. Hugon, Displacement damage effects in InGaAs detectors: experimental results and semi-empirical model prediction, IEEE Transactions on Nuclear Science, vol.47, issue.6, pp.2466-2472, 2000.
DOI : 10.1109/23.903794

K. [. Barton, E. I. Bernhard-h¨ofer, and . Cole-jr, FLIP-chip and " backside " techniques. Microelectronics Reliability, pp.721-730, 1999.
DOI : 10.1016/s0026-2714(99)00093-1

T. Beauchêne, Etude et localisation de défauts dans les circuits intégrés par stimulationPhotoélectrique laser, Thèse de doctorat, 2004.

M. R. Bruce and M. Bruce, Soft defect localization (SDL) in integrated circuits using laser scanning microscopy " , Lasers and Electro-Optics SocietyWaveform Acquisition from the Backside ofSilicon Using Electro- Optic Probing, The 16 th Annual Meeting of the IEEE Proceedings of 25 th ISTFA Santa Clara, pp.19-25, 1999.

G. Binnig and H. Rohrer, Surface Studies by Scanning Tunneling Microscopy, Physical Review Letters, vol.49, issue.1, p.57, 1982.
DOI : 10.1103/PhysRevLett.49.57

. Vallet, Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45 nm and below)", presented at Microelectronics Reliability, pp.1499-1505, 2010.

G. Celi, S. Dudit, P. Perdu, A. Reverdy, T. Parrassin et al., LVI detection on passive structure in advance CMOS technology: New opportunities for device analysis, Microelectronics Reliability, vol.51, issue.9-11, pp.511662-1667, 2011.
DOI : 10.1016/j.microrel.2011.07.030
URL : https://hal.archives-ouvertes.fr/hal-00669760

G. Celi, S. Dudit, P. Perdu, A. Reverdy, T. Parrassin et al., Thermal Frequency Imaging : A new appliquation of Laser Voltage Imaging applied on 40nm technology, International Symposium for Testing and Failure Analysis, pp.18-23, 2011.

. [. Cole-jr, Resistive interconnection localization, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614), 2001.
DOI : 10.1109/IPFA.2002.1025604

J. [. Colejr, J. L. Soden, D. L. Rife, C. L. Barton, and . Henderson, Novel failure analysis techniques using photon proging with a scanning optical microscope, pp.338-398, 1994.

C. Di and J. Jess, On CMOS Bridge Fault Modeling and Test Patten Evaluation, 11th IEEE VLSI Test / Symp, pp.116-119, 1993.

A. Firiti, D. Lewis, F. Beaudoin, P. Perdu, G. Haller et al., Photoelectric laser stimulation in a failure analysis laboratory, 2004 IEEE International Symposium on Industrial Electronics, pp.101-104, 2004.
DOI : 10.1109/ISIE.2004.1571789

S. Fujiwara, On the Acceleration of Test Generation Algorithms, IEEE Transactions on Computers, vol.32, issue.12, pp.1137-1144, 1983.
DOI : 10.1109/TC.1983.1676174

J. Gervais, Mesure du coewicient d'absorption optique dans le silicium multicristallin de type P pour photopiles solaires, Journal de Physique III, vol.3, issue.7, pp.1489-1495, 1993.
DOI : 10.1051/jp3:1993213
URL : https://hal.archives-ouvertes.fr/jpa-00249013

C. Hawkins, CMOS Defect Electronics, Tutorials, International Symposiumfor Testing and Failure Analysis, 2003.

H. K. Heinrich, D. M. Bloom, B. R. Hemenway, K. Mcgroddy, and U. Keller, Noninvasive Optical SheetCharge Density Probe for Silicon Integrated Circuits, IEEETransactions on Electron Devices, p.1860, 1987.
DOI : 10.1109/t-ed.1986.22815

Y. E. Hong and M. Tay-tiong-we, The application of novel Failure Analysis Techniques for Advanced Multi-layered CMOS devices, IEEE -Proceedings of International Test Conference (ITC), pp.304-309, 1997.

H. Iwai, CMOS technology-year 2010 and beyond, IEEE Journal of Solid-State Circuits, vol.34, issue.3, pp.357-366, 1999.
DOI : 10.1109/4.748187

A. H. Johnston, Charge generation and collection in p-n junctions excited with pulsed infrared lasers, KAS11] S.Kasapi, U.S. Patent 7, pp.1694-1702100, 1993.
DOI : 10.1109/23.273491

S. Kasap, Thermoelectric effects in Metals : Thermocouples », e-booklet

C. V. Keldysh, The effect of a strong electric field on theoptical properties of insulating crystals, Soviet Physics JETP, pp.788-790, 1958.

. [. Keldysh, Ionization in the field of a strong electromagnetic wave, J. Exptl

N. Khurana and C. L. , Chiang « Analysis of Product Hot Electron Problems by Gated Emission Microscopy, Proceeding IRPS, IEEE, pp.189-194, 1986.

G. [. Kindereit, J. Woods, C. Tian, and . Boit, Invesigation of Laser Voltage Probing Signals in CMOS Transistors, IEEE-IRPS, vol.45, p.526, 2007.

U. Kindereit, C. Boit, U. Kerst, and S. Kasapi, Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120nm and 65nm technology, Microelectronics Reliability, vol.48, issue.8-9, pp.48-1322, 2008.
DOI : 10.1016/j.microrel.2008.07.040

J. Kolzer, C. Boit, A. Dallmann, G. Deboy, J. Otto et al., Quantitative emission microscopy, Quantitative Emission Microscopy, pp.23-41, 1992.
DOI : 10.1063/1.350466

C. Leroux and D. Blachier, Light emission microscopy for reliability studies. Microelectronics reliability, pp.169-180, 1999.

Y. Matsunaga, H. Yamashita, and S. Ohsawa, A highly sensitive on-chip charge detector for CCD area image sensor, IEEE Journal of Solid-State Circuits, vol.26, issue.4, pp.652-656, 1991.
DOI : 10.1109/4.75068

S. Ito and H. Monna, Failure analysis of wafer using backside OBIC method. Microelectronics Reliability, pp.993-996, 1998.

G. E. Moor, Cramming More Components Onto Integrated Circuits, Proceedings of the IEEE, vol.86, issue.1, 1965.
DOI : 10.1109/JPROC.1998.658762

K. Nikawa and S. Tozaki, Testing and failure analysis, pp.303-310, 1993.

C. [. Nikawa, S. Matsumoto, and . Inoue, Verification and improvement of the optical beam induced resistance change (OBIRCH) method. ISTFA, 1996.

K. Nikawa, Inoue : LSI failure analysis using focused laser beam heating

J. I. Pankove, Optical Processes in Semiconductors, Journal of The Electrochemical Society, vol.119, issue.5, 1971.
DOI : 10.1149/1.2404256

P. Perdu, R. Desplats, and F. Beaudoin, A review of sample backside preparation techniques for VLSI, Microelectronics Reliability, vol.40, issue.8-10, pp.1431-1436, 2000.
DOI : 10.1016/S0026-2714(00)00126-8

M. Remmach, A. Pigozzi, R. Desplats, P. Perdu, D. Lewis et al., Light Emission to Time Resolved Emission For IC Debug and Failure Analysis, Microelectronics Reliability, vol.45, issue.9-11, pp.1476-1481, 2005.
DOI : 10.1016/j.microrel.2005.07.034
URL : https://hal.archives-ouvertes.fr/hal-00401289

V. Quintard, Réflectométrie et Interférométrie laser haute résolutionApplication à la caractérisation de composants électronique, Thèse dedoctorat de l'Université de Bordeaux 1, n° 1315, 1995.

M. Remmach, R. Desplats, P. Perdu, J. P. Roux, M. Vallet et al., Light Emission and TRE for a 120nm Technology case study : How much wavelength shift ?, IEEE -Proceedings of IPFA, pp.139-142, 2004.

J. P. Roth, Diagnosis of Automata Failures: A Calculus and a Method, IBM Journal of Research and Development, vol.10, issue.4, 1966.
DOI : 10.1147/rd.104.0278

J. A. Rowlette and T. M. Eiles, Critical timing analysis in microprocessors using near-ir laser assisted device alteration (lada), International Test Conference, 2003. Proceedings. ITC 2003., pp.264-273, 2003.
DOI : 10.1109/TEST.2003.1270848

K. Sanchez, Développement et application de techniques d'analyse par stimulation dynamique laser pour la localisation de défaut et le diagnostic de CI, p.3370, 2007.

M. Saritas and H. D. , Absorption coefficient of Si in the wavelength region between 0.80???1.16 ??m, Journal of Applied Physics, vol.61, issue.10, pp.4923-4923, 1987.
DOI : 10.1063/1.338360

B. [. Soref and . Bennett, Electro-optical effects in silicon, IEEE Journal of Quantum Electronics, p.23, 1987.

G. Shade, Photon Emission Microscopy", Desk Reference Fifth Edition ? Electronic Device Failure Analysis Society (EDFAS), pp.347-355, 2004.

T. Skotniki and F. Boeuf, Introduction à la physique du transistor MOS, 2003.

F. Stellari, A. Tosi, F. Zappa, and S. Cova, CMOS Circuit Analysis with Luminescencemeasurements and simulations, IEEE -Proceedings of ESSDERC, pp.495-498, 2002.

F. Stellari, A. Tosi, and P. Song, Switchnig Time Extraction of CMOS Gates using Time-Resolved Emission (TRE), IEEE -Proceedings of IRPS, pp.566-573, 2006.

R. A. Soref and B. R. Bennett, Electrooptical effects inSilicon, IEEE Journal of Quantum Electronics, pp.123-135, 1987.
DOI : 10.1109/jqe.1987.1073206

A. Tosi, F. Stellari, A. Pigozzi, G. Marchesi, and F. Zappa, Hot-Carrier Photoemission in Scaled CMOS Technologies: A Challenge for Emission Based Testing and Diagnostics, 2006 IEEE International Reliability Physics Symposium Proceedings, pp.595-601, 2006.
DOI : 10.1109/RELPHY.2006.251284

A. Tosi, F. Stellari, F. Zappa, and S. Cova, Hot-carrier luminescence: comparison of different CMOS technologies, Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710), pp.351-354, 2003.
DOI : 10.1109/ESSDERC.2003.1256886

D. P. Vallett, Failure analysis requirements for nanoelectronics, IEEE Transactions On Nanotechnology, vol.1, issue.3, pp.117-121, 2000.
DOI : 10.1109/TNANO.2002.806826

H. Vierhaus, CMOS bridges and resistive transistor faults: IDDQ versus delay effects, Proceedings of IEEE International Test Conference, (ITC), pp.83-91, 1993.
DOI : 10.1109/TEST.1993.470715

P. H. Wendland and M. Chester, Electric Field Effects on Indirect Optical Transitions in Silicon, Physical Review, vol.140, issue.4A, pp.1384-1390, 1965.
DOI : 10.1103/PhysRev.140.A1384

. [. Williams, Electric Field Induced Light Absorption in CdS, Physical Review, vol.117, issue.6, pp.1487-1490, 1960.
DOI : 10.1103/PhysRev.117.1487

T. Wilson and C. J. Sheppard, Observations of dislocations and jonction irregularities in bipolar transistors using the OBIC mode of the scanning optical microscope

M. Wai-mun-yee, T. Paniccia, V. Eiles, S. Rao, T. Yin et al., Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors Laser Voltage Imaging : A new perspective of Laser Voltage Probing, IEEE Proceedings of 7th IPFA '99 International Symposium for Testing and Failure Analysis, pp.5-12, 2010.