Skip to Main content Skip to Navigation

Approche polymorphe de la modélisation électrothermique pour la fiabilisation des dispositifs microélectroniques de puissance

Toufik Azoui 1
1 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : The strong current development of embedded electronic systems leads us to the challenge of their reliability, all the more so as the security organs are often involved and that these systems operate in harsh environmental conditions with a requirement to reduce cost drastically. What best characterizes the recent evolution of the embedded electronic systems is a strong integration that leads to reduce their size and weight while increasing the electrical power converted. This automatically increases the power density dissipated and so the study of their electro-thermal behavior becomes of fundamental importance. The present work concerns the development of specific tools that allow electro-thermal modeling to understand the impact of the chosen technology (design, connections, materials ...) on the phenomena caused by defects that occur with ageing. Robustness rules specific to each technology may be adopted using 3D simulations presented in the report. At first, compact electro-thermal modeling was discussed. Second, considering power MOS modules which operate in a non-switching mode, a first class of problems can be treated by using a finite element electro-thermal modeling that assumes that the components act as a set of zones whose electrical and thermal conductivities are different. An attempt was made to extend the electro-thermal study to classes of problems where power MOSFETs are switching. Distributed electrical models must then be able to calculate and allocate total losses (on-state, off-state and switching) for a fast switching rate. Finally, particular attention has been given to the study of avalanche mode operation; a method based on experimentation and the use of a simple electro-thermal model to estimate the junction temperature of a power MOSFET when operating in short duration avalanche mode has been developed. To conclude, we have demonstrated that there is no single answer in terms of electro-thermal modeling and each method developed aims to solve a specific class of problems.
Complete list of metadata
Contributor : Arlette Evrard <>
Submitted on : Wednesday, September 25, 2013 - 10:43:13 AM
Last modification on : Thursday, June 10, 2021 - 3:01:41 AM
Long-term archiving on: : Thursday, December 26, 2013 - 4:17:58 AM


  • HAL Id : tel-00865827, version 1


Toufik Azoui. Approche polymorphe de la modélisation électrothermique pour la fiabilisation des dispositifs microélectroniques de puissance. Micro et nanotechnologies/Microélectronique. INSA de Toulouse, 2013. Français. ⟨tel-00865827⟩



Record views


Files downloads