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Vers un laser germanium dopé N et contraint en tension

Abstract : In this PhD work, we studied different approaches that should lead to a germanium laser. We have experimentally shown the influence of strain and doping on the germanium band structure, and the adequacy of the existing models. We explored the possibilities offered by heteroepitaxy on III-V compounds to apply stress. We investigated the resulting strain by cross-checking X-rays, Raman spectroscopy and photoluminescence measurements, and analysed the quality of the grown layers depending on strain and thickness. A new method to apply strain to the germanium, by means of plasma deposited stressed nitride layers, was introduced and studied. Lasing has been pursued by conceiving ridges and microdisks strained by this method. An optimization of the geometry was performed through finite element modeling and the production of test structures. This optimization allowed to achieve a maximum biaxial strain of 1.1%. For uniaxial strains, we observed a maximum of 1.07% and showed experimentally the importance of the crystalline orientation in the enhancement of the emission. We demonstrated a modal gain value of 80 cm⁻¹ in ridges uniaxially strained at 0.8%.
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Submitted on : Monday, September 23, 2013 - 3:37:14 PM
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Malo De de Kersauson Kersauson. Vers un laser germanium dopé N et contraint en tension. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2013. Français. ⟨NNT : 2013PA112107⟩. ⟨tel-00864954⟩

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