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Matériaux thermoélectriques du type Mg2Si-Mg2Sn élaborés en couches minces par co-pulvérisation assistée par plasma

Abstract : This thesis presents a study of the deposition and structural as well as electrical properties of thin films of thermoelectric materials Mg2Sn-Mg2Si. Polycrystalline thin films of the Mg2Sn compound and solid solutions Mg2Si1-xSnx were deposited on several types of substrate at room temperature, by co-sputtering assisted by microwave plasma. The influence of deposition parameters on structural and electrical properties of deposited films was studied. Thus, the chemical composition of layers was fully controlled by the means of the independent polarization of target of constituent elements. Phase composition and microstructure of deposited films were found depending on the deposition pressure, on the distance between targets and the substrate, on the microwave power, as well as on the configuration of the deposition reactor. These structural properties, in turn, have a strong impact on the electrical properties of the deposited films. Mg2Sn thin films doped with Ag, deposited under optimal condition, presented a power factor at room temperature comparable to conventional thermoelectric materials. Thin films of solid solutions Mg2Si1-xSnx present, however, power factors still modest due in particular to low electrical conductivities.
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https://tel.archives-ouvertes.fr/tel-00859213
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Submitted on : Friday, September 6, 2013 - 4:27:11 PM
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  • HAL Id : tel-00859213, version 1

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Citation

Huy Le Quoc. Matériaux thermoélectriques du type Mg2Si-Mg2Sn élaborés en couches minces par co-pulvérisation assistée par plasma. Physique des plasmas [physics.plasm-ph]. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENY072⟩. ⟨tel-00859213⟩

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