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Optimisation du couple revêtement anti-adhérent / matériau de creuset pour la cristallisation du silicium photovoltaïque - Application au moulage direct des wafers de Si

Abstract : Considering the use of graphite as a crucible material instead of sintered silica for the directional crystallisation process of multicrystalline solar grade silicon, one of the main goals of this PhD program was to develop a dedicated releasing coating to be used with the identified mould material. A first task of this work consisted in a precise definition of the operating conditions for the releasing coating / crucible material couple and consequently modifying the process in order to be able to use the standard silicon nitride powder-based releasing coating on graphite. The second task was to design the moulding process based on a preliminary study of a simplified configuration of squeezing moulding experiments where the silicon piece spreads into the inner space of the mould when melting. The aim of these experiments was to enlighten the consequences of the “moulding” configuration (characterised by a high contact surface / Si volume ratio, a priori very detrimental) and of the thermal conditions (gradient and solidification speed) on adhesion (sticking), pollution coming from the coating, and on the crystalline structure of moulded silicon.
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Charles Huguet. Optimisation du couple revêtement anti-adhérent / matériau de creuset pour la cristallisation du silicium photovoltaïque - Application au moulage direct des wafers de Si. Physique [physics]. Université de Grenoble, 2012. Français. ⟨NNT : 2012GRENI072⟩. ⟨tel-00845703⟩

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