M. A. Green, K. Emery, Y. Hishikawa, and W. W. Prog, Solar cell efficiency tables (version 37), Progress in Photovoltaics: Research and Applications, vol.73, issue.6, pp.84-92, 2011.
DOI : 10.1002/pip.1088

J. Zhao, A. Wang, and M. Green, 5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates, Progress in Photovoltaics, vol.24, issue.7, pp.471-474, 1999.

P. Cousins, D. Smith, H. Luan, J. Manning, T. Dennis et al., Gen III: improved performance at lower cost, 2010.
DOI : 10.1109/pvsc.2010.5615850

E. Maruyama, A. Terakawa, M. Taguchi, Y. Yoshimine, D. Ide et al., Sanyo's Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006.
DOI : 10.1109/WCPEC.2006.279743

D. Niinobe, K. Nishimura, S. Matsuno, H. Fujioka, T. Katsura et al., Honeycomb structured multi-crystalline silicon solar cells with 18.6% efficiency via industrially applicable laser-process, pp.2-5, 2008.

T. Takamoto, K. Sasaki, T. Agui, H. Juso, A. Yoshida et al., III-V compound solar cells, SHARP Technical Journal, vol.100, pp.1-10, 2010.

X. Wu, J. Keane, R. Dhere, C. Dehart, A. Duda et al., 5%- efficient CdS/CdTe polycrystalline thin-film solar cell, Proceedings of the 17th European Photovoltaic Solar Energy Conference, pp.22-26, 2001.

C. Belouet and J. , Growth of silicon ribbons by the RAD process, Journal of Crystal Growth, vol.82, issue.1-2, pp.110-116, 1987.
DOI : 10.1016/0022-0248(87)90173-4

J. Nestel-patt and S. Kroeger, Improving wafering cost of ownership by optimizing mass ingot yield, Component & material, Material technology. InterPV, 2010.

A. Luque and S. Hegedus, Handbook of Photovoltaic Science and Engineering, British Library, 2002.

S. Dubois, Influence des interactions impureté-défaut et impureté-impureté sur le rendement de conversion des cellules photovoltaïques au silicium cristallin, Thèse de l'université Paul Cézanne, 2007.

C. Trassy, La métallurgie du silicium solaire. Reflets de la physique. Dossier de la société francaise de physique, septembre, 2007.

J. D. Murphy, P. R. Wilshaw, B. C. Pygall, S. Senkader, and R. J. Falster, Enhanced oxygen diffusion in highly doped p-type Czochralski silicon, Journal of Applied Physics, vol.100, issue.10, p.103531, 2006.
DOI : 10.1063/1.2369536

P. J. Cousins, D. D. Smith, H. C. Luan, J. Manning, T. D. Dennis et al., Gen III : improved performance at lower cost, 2010.

J. Kraiem, R. Einhaus, F. Lissalde, S. Dubois, N. Enjalbert et al., Innovative Crystallisation of Multi-Crystalline Silicon Ingots from different types of Silicon Feedstock, Proceedings of the 23trd PVSEC European Conference, 2008.

D. Niinobe, K. Nishimura, S. Matsuno, H. Fujioka, T. Katsura et al., Honeycomb structured multi-crystalline silicon solar cells with 18.6 % efficiency via industrially applicable laser-process, 2008.

D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano, and L. J. Geerligs, Transition-metal profiles in a multicrystalline silicon ingot, Journal of Applied Physics, vol.97, issue.3, p.33523, 2005.
DOI : 10.1063/1.1845584

E. Øvrelid, B. Geerligs, A. Waernes, O. Raaness, I. Solheim et al., Solar Grade Silicon by a Direct Metallurgical Process Silicon for the Chemical Industry VIII Trondheim, 2006.

Y. Delannoy, C. Alemany, K. ?. Li, and C. Trassy, Plasma-refining process to provide solar-grade silicon, Solar Energy Materials and Solar Cells, vol.72, issue.1-4, pp.72-69, 2002.
DOI : 10.1016/S0927-0248(01)00151-9
URL : https://hal.archives-ouvertes.fr/hal-00475485

P. Grumberg, Silicium PGS. Vers la révolution des panneaux solaires. Science et vie. Edition septembre, 2005.

J. Veirman, S. Dubois, N. Enjalbert, J. Garandet, and M. Lemiti, Iso-carrier density comparison of compensation effects on highly doped solar grade silicon solar cells, Proceedings of the 25 th PVSEC European Conference, 2010.

N. Yuge, Purification of metallurgical-grade silicon up to solar grade, Progress in Photovoltaics: Research and Applications, vol.9, issue.3, pp.243-250, 1994.
DOI : 10.1002/pip.372

A. F. Braga, S. P. Moreira, P. R. Zampieri, J. M. Bacchin, and P. R. Mei, New processes for the production of solar-grade polycrystalline silicon: A review, Solar Energy Materials and Solar Cells, vol.92, issue.4, pp.92-418, 2002.
DOI : 10.1016/j.solmat.2007.10.003

K. Schmidt and . Bothe, Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon, Physical Review B, vol.69, issue.2, p.24107, 2004.
DOI : 10.1103/PhysRevB.69.024107

D. H. Macdonald, Recombination and Trapping in Silicon Solar Cells, Ph. D, 2001.

M. J. Kerr, Surface, Emitter and Bulk Recombination in Silicon and development of Silicon Nitride Passivated Solar Cells, Ph. D. Australian National University, 2002.

J. Veirman, S. Dubois, N. Enjalbert, J. Garandet, D. Heslinga et al., Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation, Solid-State Electronics, vol.54, issue.6, pp.671-674, 2010.
DOI : 10.1016/j.sse.2010.02.002

K. Graff, Metal Impurities in Silicon-Device Fabrication, 1995.

P. Rosenits, T. Roth, S. W. Glunz, and S. Beljakowa, Determining the defect parameters of the deep aluminum-related defect center in silicon, Applied Physics Letters, vol.91, issue.12, p.122109, 2007.
DOI : 10.1063/1.2789378

M. Rodot, J. E. Bourée, A. Mesli, G. Revel, R. Kishore et al., Al???related recombination center in polycrystalline Si, Journal of Applied Physics, vol.62, issue.6, pp.2556-2558, 1987.
DOI : 10.1063/1.339446

A. A. Istratov, T. Buonassisi, R. J. Mcdonald, A. R. Smith, J. A. Schindler et al., Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length, Journal of Applied Physics, vol.94, issue.10, p.6552, 2003.
DOI : 10.1063/1.1618912

A. A. Istratov, H. Hielsmair, and E. R. Weber, Iron and its complexes in silicon, Applied Physics A: Materials Science & Processing, vol.69, issue.1, p.13, 1999.
DOI : 10.1007/s003390050968

S. Martinuzzi, O. Palais, M. Pasquinelli, and F. Ferrazza, N-type multicrystalline silicon wafers and rear junction solar cells, The European Physical Journal Applied Physics, vol.32, issue.3, p.187, 2005.
DOI : 10.1051/epjap:2005085

D. Macdonald and L. J. Geerligs, Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon, Applied Physics Letters, vol.85, issue.18, p.4061, 2004.
DOI : 10.1063/1.1812833

D. Macdonald, A. Kinomura, L. J. Geerligs, and A. Cuevas, Interstitial and precipitated iron content of photovoltaic-grade cast multicrystalline silicon, Proceedings of the 4th International Symposium on Advanced Science and Technology of Silicon Materials, pp.390-395, 2004.

S. M. Sze, Physics of Semiconductor Devices, 2 nd edition, p.26

J. Schmidt, K. Bothe, R. Bock, C. Schmiga, R. Krain et al., N-type silicon ? The better material choice for industrial high-efficiency solar cells, 22 nd PVSEC European Conference, 2007.

S. Martinuzzi, F. Warchol, S. Dubois, and N. Enjalbert, Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafers, Materials Science and Engineering: B, vol.159, issue.160, pp.160-253, 2009.
DOI : 10.1016/j.mseb.2008.05.015

D. Macdonald and P. Rosenits, The impact of manganese contamination on the carrier lifetime in crystalline silicon solar cells. 44th Australian and New Zealand Solar Energy Society Conference, pp.13-15, 2006.

J. Kraiem, B. Drevet, F. Cocco, N. Enjalbert, S. Dubois et al., High performance solar cells made from 100% UMG silicon obtained via the Photosil project, 2010.

A. Lotnyk, J. Bauer, O. Breitenstein, and H. Blumtritt, A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cells. Solar Energy Materials and Solar Cells, pp.1236-1240, 2008.

B. Damiani, K. Nakayashiki, D. S. Kim, V. Yelundur, S. Ostapenko et al., Light induced degradation in promising multi-crystalline silicon for solar cell fabrication, rd World Conference on Photovoltaic Energy Conversion, 2003.

S. Binetti, J. Libal, M. Acciarri, M. D. Sabatino, H. Nordmark et al., Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstock, Materials Science and Engineering: B, vol.159, issue.160, pp.159-160, 2009.
DOI : 10.1016/j.mseb.2008.05.013

J. Schmidt, Présentation au Workshop npv, 2011.

H. Mathieu, Physique des semiconducteurs et des composants électroniques, 1987.

J. Y. Lee, Rapid thermal processing of siliconsolar cells ? Passivation and diffusion, 2003.

M. Sasani, The simple approach to determination of active diffused phosphorus density in silicon " . Semiconductor Physics, Quantum Electronics & Optoelectronics, pp.22-25, 2004.

S. Dubois, Influence des interactions impureté-défaut et impureté-impureté sur le rendement de conversion des cellules photovoltaïques au silicium cristallin, Thèse de l'Université Paul Cézanne, 2007.

S. De-wolf, G. Agostinelli, G. Beaucarne, and P. Vitanov, Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation, Journal of Applied Physics, vol.97, issue.6, p.63303, 2005.
DOI : 10.1063/1.1861138

M. Sheoran, D. S. Kim, A. Rohatgi, H. F. Dekkers, G. Beaucarne et al., Hydrogen diffusion in silicon from plasma-enhanced chemical vapour deposited silicon nitride film at high temperature, J. Appl. Phys, vol.92, p.172107, 2008.

B. L. Sopori, Y. Zhang, and R. Reedy, H Diffusion for impurity and defect passivation : a physical model, 29th IEEE PV Specialists Conference, 2002.

L. Debarge, Etude de procédés industrialisables de réalisation d'émetteurs sélectifs de cellules photovoltaïques à base de silicium, 2001.

J. Jourdan, Développement de procédés de fabrication de cellules photovoltaïques sur substrats silicium de type n, 2008.

B. Thuillier, Caractérisation structurale des contacts ohmiques réalisés à partir d'encres métalliques sur cellules photovoltaïques en silicium multicristallin, Thèse INSA de Lyon, 2001.

F. Huster, 20th European Photovoltaic Solar Energy Conference, 2005.

V. D. Mihailetchi, Y. Komatsu, G. Coletti, R. Kvande, L. Arnberg et al., High efficiency industrial screen printed n-type solar cells with front boron emitter, 2008 33rd IEEE Photovolatic Specialists Conference, 2008.
DOI : 10.1109/PVSC.2008.4922846

B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. Van-de-sanden et al., Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3, Applied Physics Letters, vol.91, issue.11, p.112107, 2007.
DOI : 10.1063/1.2784168

D. Mathiot, Dopage et Diffusion dans le Silicium

R. Petres, J. Libal, R. Kopecek, M. Vetter, R. Ferre et al., Passivation of p+-Surfaces by PECVD Silicon Carbide Films ? A Promising Method for Industrial Silicon Solar Cell Applications

S. Dauwe, Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells, Progress in Photovoltaics: Research and Applications, vol.80, issue.7, pp.271-278, 2002.
DOI : 10.1002/pip.420

V. D. Mihailetchi, Y. Komatsu, and L. J. Geerligs, Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells, Applied Physics Letters, vol.92, issue.6, p.63510, 2008.
DOI : 10.1063/1.2870202

R. C. Naber, N. Guillevin, A. R. Burgers, L. J. Geerligs, and A. W. Weeber, ECN n-type silicon solar cell technology: An industrial process that yields 18.5%, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), p.34, 2009.
DOI : 10.1109/PVSC.2009.5411189

J. Benick, O. Schultz-wittmann, J. Schön, and S. W. Glunz, Passivation of Boron emitters by local overcompensation with Phosphorous, 23 rd European Photovoltaic Solar Conference and Exhibition, pp.1-5

J. Libal, R. Petres, T. Buck, R. Kopecek, G. Hahn et al., N-type multicrystalline silicon solar cells : BBr3 diffusion and passivation of p+ di_used silicon surfaces, Proceedings of the 20rd European Photovoltaic Solar Energy Conference, pp.793-796, 2005.

R. Kopecek, T. Buck, J. Libal, R. Petres, I. Röver et al., Large Area N-Type Multicrystalline Silicon Solar Cells with BEmitter : Efficiencies Exceeding 14%, Proceedinds of the 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, 2005.

R. Cabal, F. Dauzou, P. Brand, G. Raymond, J. Singer et al., High efficiency boron emitter n-type solar cells: benefits & challenges, 2011.

«. Microworld and . Four, Point Probe Resistivity » : www.four-point-probe.eu, site internet consulté le 3 mai, 2011.

D. H. Macdonald, Recombination and Trapping in Silicon Solar Cells, Ph. D, 2001.

R. A. Sinton, A. Cuevas, and M. Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference, 1996, 1996.
DOI : 10.1109/PVSC.1996.564042

T. Pisarkiewicz, Photodecay method in investigation of materials and photovoltaic structures, optoelectronics review, vol.12, issue.1, pp.33-40, 2004.

R. A. Sinton and A. Cuevas, Contactless determination of current???voltage characteristics and minority???carrier lifetimes in semiconductors from quasi???steady???state photoconductance data, Applied Physics Letters, vol.69, issue.17, pp.2510-2512, 1996.
DOI : 10.1063/1.117723

E. Conwell and V. F. Weisskopf, Theory of Impurity Scattering in Semiconductors, Physical Review, vol.77, issue.3, p.388, 1950.
DOI : 10.1103/PhysRev.77.388

P. P. Debye, -Type Germanium, Physical Review, vol.93, issue.4, p.693, 1954.
DOI : 10.1103/PhysRev.93.693
URL : https://hal.archives-ouvertes.fr/in2p3-00020007

O. Palais, L. Clerc, A. Arcari, M. Stemmer, and S. Martinuzzi, Mapping of minority carrier lifetime and mobility in imperfect silicon wafers, Materials Science and Engineering: B, vol.102, issue.1-3, p.184, 2003.
DOI : 10.1016/S0921-5107(02)00652-9

D. L. Dexter and F. Seitz, Effects of Dislocations on Mobilities in Semiconductors, Physical Review, vol.86, issue.6, p.964, 1952.
DOI : 10.1103/PhysRev.86.964

G. Baccarani and P. Ostoja, Solid-State Electron, p.579, 1975.

W. R. Thurber, R. L. Mattis, J. J. Liu, and . Filliben, Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon, Journal of The Electrochemical Society, vol.127, issue.8, p.1807, 1980.
DOI : 10.1149/1.2130006

D. B. Klaassen, Solid-State Electron, p.953, 1992.

L. J. Van-der-pauw, A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape, Philips Technical Review, vol.20, pp.220-224, 1958.

O. Schultz, High-Efficiency Multicrystalline Silicon Solar Cells, Thèse du Fraunhofer ISE (Institut für Solare Energiesysteme), 2005.

A. Luque and S. Hegedus, Handbook of Photovoltaic Science and Engineering, British Library, 2002.

C. Tams, N. Enjalbert, . Uv, /. Vis, and . Spectroscopy, The Use of UV/Vis/NIR Spectroscopy in the Development of Photovoltaic Cells, 2009.

J. Benick, B. Hoex, M. C. Van-de-sanden, W. M. Kessels, O. Schultz et al., High efficiency n-type Si solar cells on Al2O3-passivated boron emitters, Applied Physics Letters, vol.92, issue.25, p.253504, 2008.
DOI : 10.1063/1.2945287

T. Schutz-kuchly, Y. Veschetti, R. Cabal, V. Sanzone, and D. Heslinga, High efficiency on inversed emitter ntype silicon solar cell adapted to a wide range of resistivity, 24th European Photovoltaic Solar Conference and Exhibition, 2009.

A. Istratov, T. Buonassisi, R. J. Mcdonald, A. R. Smith, J. A. Schindler et al., Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length, Journal of Applied Physics, vol.94, issue.10, p.6552, 2003.
DOI : 10.1063/1.1618912

T. Buonassisi, A. A. Istratov, M. D. Pickett, J. Rakotoniaina, O. Breitenstein et al., Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material, Journal of Crystal Growth, vol.287, issue.2, pp.402-407, 2006.
DOI : 10.1016/j.jcrysgro.2005.11.053

T. Uberg-naerland, L. Arnberg, and A. Prog, Origin of the low carrier lifetime edge zone in multicrystalline PV silicon, Progress in Photovoltaics: Research and Applications, vol.70, issue.96, pp.289-296, 2009.
DOI : 10.1002/pip.876

N. Enjalbert and R. A. Sinton, Quasi-steady-state lifetime measurements on blocks: prediction of cell efficiency, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005., 2005.
DOI : 10.1109/PVSC.2005.1488279

A. Cuevas, S. Riepe, M. J. Kerr, D. H. Macdonald, G. Coletti et al., N-type multicrystalline silicon: A stable, high lifetime material, WCPEC, 2003.

J. Schmidt, Présentation au Workshop npv, 2011.

W. Shockley and W. T. Read, Statistics of the Recombinations of Holes and Electrons, Physical Review, vol.87, issue.5, p.835, 1952.
DOI : 10.1103/PhysRev.87.835

S. Dubois, CrystalClear Workshop on Solar Grade Silicon Feedstocks Specifications, pp.13-14, 2008.

S. Dubois, N. Enjalbert, and J. P. Garandet, Effects of the compensation level on the carrier lifetime of crystalline silicon, Applied Physics Letters, vol.93, issue.3, p.32114, 2008.
DOI : 10.1063/1.2961030

E. Ohta and M. Sakata, -Type Silicon, Japanese Journal of Applied Physics, vol.17, issue.10, pp.1795-804, 1978.
DOI : 10.1143/JJAP.17.1795
URL : https://hal.archives-ouvertes.fr/hal-00559972

J. Veirman, S. Dubois, N. Enjalbert, J. P. Garandet, D. R. Heslinga et al., Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation, Solid-State Electronics, vol.54, issue.6, pp.671-674, 2010.
DOI : 10.1016/j.sse.2010.02.002

T. Schutz-kuchly, Y. Veschetti, V. Sanzone, and O. Palais, Towards Specifications of n-type Silicon Purified via the Metallurgical Route, Proceedings of the 25 th PVSEC European Conference, pp.35-40, 2010.
DOI : 10.1016/j.egypro.2011.06.098

Y. Veschetti, T. Schutz-kuchly, S. Manuel, S. Gall, and D. Heslinga, High efficiency solar cells by optimization of front surface passivation on n-type rear Al alloyed emitter structure " . 25 th European Photovoltaic Solar Conference and Exhibition, 2010.

T. Schutz-kuchly, Y. Veschetti, V. Sanzone, and O. Palais, Towards Specifications of n-type Silicon Purified via the Metallurgical Route, presentation orale à la 1 st SiliconPV, 2011.
DOI : 10.1016/j.egypro.2011.06.098

A. Cuevas, M. Stuckings, J. Lau, and M. Petravic, The recombination velocity of boron diffused silicon surfaces, Proc. 14 th European Photovoltaic Solar Energy Conference, 1997.

M. Cid and N. Stem, Homogeneous Gaussian Profile P+-Type Emitters: Updated Parameters and Metal-Grid Optimization, Materials Research, vol.5, issue.4, pp.427-432, 2002.
DOI : 10.1590/S1516-14392002000400006

B. Lim, F. Rougieux, D. Macdonald, K. Bothe, and J. Schmidt, Generation and annihilation of boron???oxygen-related recombination centers in compensated p- and n-type silicon, Journal of Applied Physics, vol.108, issue.10, p.103722, 2010.
DOI : 10.1063/1.3511741

D. B. Klaassen, Solid-State Electron, p.953, 1992.

D. B. Klaassen, Solid-State Electron, p.961, 1992.

J. Schmidt, K. Bothe, R. Bock, C. Schmiga, R. Krain et al., N-type silicon ? The better material choice for industrial high-efficiency solar cells?, 22 nd PVSEC European Conference, 2007.

J. Libal, R. Petres, R. Kopecek, G. Hahn, K. Wambach et al., N-type Mulicrystalline silicon solar cells with BBr3-diffused front junction, Proceedings of the 31st IEEE photovoltaic conference, 2005.

T. Desrues, J. Jourdan, Y. Veschetti, and R. Monna, N-type silicon solar cells with B-doped emitter using spin-on dopants, Proceedings of the 22nd PVSEC conference, 2007.

R. Cabal, J. Jourdan, B. Grange, Y. Veschetti, and D. Heslinga, Investigation of the potential of Boron Doped Oxyde deposited by PECVD ? application to advanced solar cells fabrication, 2009.

R. Petres, J. Libal, R. Kopecek, M. Vetter, R. Ferre et al., Passivation of p+-Surfaces by PECVD Silicon Carbide Films ? A Promising Method for Industrial Silicon Solar Cell Applications

R. Lago, L. Perez, H. Kerp, I. Freire, I. Hoces et al., Screen printing metallization of boron emitters, Progress in Photovoltaics: Research and Applications, vol.1, issue.10, pp.20-27, 2010.
DOI : 10.1002/pip.933

N. Zin and A. Blakers, Boron diffusion induced shunts, 2011 37th IEEE Photovoltaic Specialists Conference, 2011.
DOI : 10.1109/PVSC.2011.6185871

Y. Veschetti, T. Schutz-kuchly, V. Sanzone, and D. Heslinga, Studies of electrical properties of n-type solar grade silicon

T. Schutz-kuchly, Y. Veschetti, V. Sanzone, and O. Palais, Towards Specifications of n-type Silicon Purified via the Metallurgical Route, Energy Procedia, vol.8, pp.35-40, 2011.
DOI : 10.1016/j.egypro.2011.06.098

T. Schutz-kuchly, S. Dubois, J. Veirman, Y. Veschetti, D. Heslinga et al., Light-induced degradation in compensated n-type Czochralski silicon solar cells, physica status solidi (a), vol.95, issue.3, pp.572-575, 2010.
DOI : 10.1002/pssa.201000218

V. Chapitre, Qualification des cellules photovoltaïques réalisées. Stabilité sous éclairement. Comportement en température

S. Dubois, N. Enjalbert, and J. P. Garandet, Slow down of the light-induced-degradation in compensated solar-grade multicrystalline silicon, Applied Physics Letters, vol.93, issue.10, p.103510, 2008.
DOI : 10.1063/1.2982098

J. Schmidt and K. Bothe, Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon, Physical Review B, vol.69, issue.2, p.24107, 2004.
DOI : 10.1103/PhysRevB.69.024107

V. V. Voronkov and R. Falster, Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells, Journal of Applied Physics, vol.107, issue.5, p.53509, 2010.
DOI : 10.1063/1.3309869

D. W. Palmer, K. Bothe, and J. Schmidt, Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon, Physical Review B, vol.76, issue.3, p.35210, 2007.
DOI : 10.1103/PhysRevB.76.035210

D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt et al., Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon, Journal of Applied Physics, vol.105, issue.9, p.93704, 2009.
DOI : 10.1063/1.3121208

S. Rein and S. W. Glunz, Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy, Applied Physics Letters, vol.82, issue.7, p.1054, 2003.
DOI : 10.1063/1.1544431

S. Franssila, Introduction to microfabrication. Second Edition

W. Shockley and W. T. Read, Statistics of the Recombinations of Holes and Electrons, Physical Review, vol.87, issue.5, p.835, 1952.
DOI : 10.1103/PhysRev.87.835

V. Tsvetov, W. Allred, and W. G. Spitzer, LOCALIZED VIBRATIONAL MODES IN SILICON: B???P PAIR BANDS, Applied Physics Letters, vol.10, issue.11, p.326, 1967.
DOI : 10.1063/1.1754831

B. Lim, A. Liu, D. Macdonald, K. Bothe, and J. Schmidt, Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon, Applied Physics Letters, vol.95, issue.23, p.232109, 2009.
DOI : 10.1063/1.3272918

D. Macdonald, A. Liu, A. Cuevas, B. Lim, and J. Schmidt, The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon, physica status solidi (a), vol.35, issue.109, pp.1-5, 2010.
DOI : 10.1002/pssa.201000146

T. Schutz-kuchly, J. Veirman, S. Dubois, and D. R. Heslinga, Light-Induced-Degradation effects in boron???phosphorus compensated n-type Czochralski silicon, Applied Physics Letters, vol.96, issue.9, p.93505, 2010.
DOI : 10.1063/1.3334724

R. A. Sinton, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference, 1996, 1996.
DOI : 10.1109/PVSC.1996.564042

M. K. El-adawi and I. A. , The temperature functional dependence of VOC for a solar cell in relation to its efficiency new approach, Desalination, vol.209, issue.1-3, pp.91-96, 2007.
DOI : 10.1016/j.desal.2007.04.014

H. Mathieu, Physique des semiconducteurs et des composants électroniques, p.31, 1987.

R. Van-overstraeten, Solid State Electron, p.583, 1970.

M. C. Alonso-garcia and J. M. Ruiz, Analysis and modelling the reverse characteristic of photovoltaic cells, Solar Energy Materials and Solar Cells, vol.90, issue.7-8, p.1105, 2006.
DOI : 10.1016/j.solmat.2005.06.006

]. R. Lal and R. Sharan, Shunt resistance and soft reverse characteristics of silicon diffused-junction solar cells, Chapitre V : Qualification des cellules photovoltaïques réalisées, pp.1015-1023, 1986.
DOI : 10.1016/0038-1101(86)90101-2

J. Schmidt and G. Aberle, Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers, Journal of Applied Physics, vol.81, issue.9, p.6186, 1997.
DOI : 10.1063/1.364403