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Conception d'une nouvelle génération de transistor FLYMOS vertical de puissance dépassant la limite conventionnelle du silicium

Yann Weber 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : In a difficult worldwide energy environment, the improvement of electrical energy management is very key. The transfer of this electric energy is provided through power systems integrating principally power semiconductors devices. Since many years, the optimization process has focused on the reduction of conduction losses. In this context, the power MOSFET transistors performances are expressed through the "breakdown voltage (BVdss) / specific on-resistance (RON.S)" trade-off. To improve it, innovative concepts such as Superjonctions or Floating Islands have been developed and, as a result, have drastically reduced the on-resistance. The research presented in this thesis focused on the achievement of FLYMOS transistors incorporating up to two levels of P-type floating islands in the N- epitaxial region. For the first time, the shape and size of the floating islands were determined with an original physical characterization. In addition, the FLYMOS boundaries have been defined using electric dynamic characterizations. Thanks to these first studies, phenomenological understanding of this kind of component has allowed the development of an optimization process. Thus, FLYMOS transistors sustaining voltage of 230 V has been successfully developed and their specific on-resistance of 4,5 m?.cm2 overcomes the conventional silicon limit. Finally, a complete electrical characterization of these devices allowed to show that there are a good alternative to 200 V Superjunction devices.
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https://tel.archives-ouvertes.fr/tel-00807836
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Submitted on : Thursday, April 4, 2013 - 2:48:50 PM
Last modification on : Thursday, June 10, 2021 - 3:07:09 AM
Long-term archiving on: : Friday, July 5, 2013 - 4:17:52 AM

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  • HAL Id : tel-00807836, version 1

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Yann Weber. Conception d'une nouvelle génération de transistor FLYMOS vertical de puissance dépassant la limite conventionnelle du silicium. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2008. Français. ⟨tel-00807836⟩

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