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Etude et modélisation de la précipitation de particules de silicium dans des couches de silice nanométriques

Abstract : Optical and electrical properties of silicon nanoclusters embedded in silica have attracted major attention during the past few years since they are promising candidates for new generations of photovoltaic cells, memory devices, and waveguide amplifiers. These materials exhibit light emission and carrier storage properties which strongly depends on their microstructure. The nanocluster size distribution, number density and interface, as well as the host oxide composition are key parameters which govern the wavelength of the light emission, the density of trapped charges... The goal of this work is to understand the silicon nanoparticle formation mechanism at the atomic scale, depending on the elaboration parameters. In this work, it has been demonstrated that Si diffusion coefficient in silica strongly depends on the composition of the layer (i.e. the amount of excess silicon). Alongside, it has been evidenced that the layer thickness drastically changes the decomposition process, sometimes from spinodal-like decomposition to classical growth of particles. In addition, Monte Carlo Simulations have been performed to study the influence of the multilayered structure on the spinodal decomposition.
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Submitted on : Thursday, January 31, 2013 - 8:45:02 AM
Last modification on : Thursday, May 16, 2019 - 1:18:02 PM
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  • HAL Id : tel-00782200, version 2


Manuel Roussel. Etude et modélisation de la précipitation de particules de silicium dans des couches de silice nanométriques. Science des matériaux [cond-mat.mtrl-sci]. Université de Rouen, 2012. Français. ⟨tel-00782200v2⟩



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