M. O. Manasreh, Antimonide-related Strained-layer Heterostructures (Gordon and Breach, 1997.

M. G. Ancona, B. R. Bennett, and J. B. Boos, Solid-State Electron, p.1349, 2010.

D. Huffaker, Novel monolithic integration of III-Sb materials on Si substrates, SPIE Newsroom, 2008.

S. Huang, Microscopy Study of Extreme Lattice Mismatched Heteroepitaxy Using Interfacial Misfit Arrays, The University of New Mexico, 2007.

M. A. Herman and H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status, 1996.

D. B. Williams and C. B. Carter, Transmission Electron Microscopy: a Textbook for, Materials Science, 1996.

]. S. Pennycook, Advances in Image and Electron Physics, 2002.

S. Kret, C. Delamarre, and J. Y. , Determination of Core Structure Periodicity and Point Defect Density Along Dislocations, Philos. Mag. Lett, vol.77, p.249, 1998.

]. S. Skokov, C. S. Carmer, B. Weiner, and M. Frenklach, Reconstruction of (100) diamond surfaces using molecular dynamics with combined quantum and empirical forces, Physical Review B, vol.49, issue.8, p.5662, 1994.
DOI : 10.1103/PhysRevB.49.5662

M. Laradji, D. P. Landau, and B. Dünweg, alloys: A Monte Carlo simulation with the Stillinger-Weber potential, Physical Review B, vol.51, issue.8, p.4894, 1995.
DOI : 10.1103/PhysRevB.51.4894

]. D. Maroudas, L. A. Zepeda-ruiz, and W. H. Weinberg, Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy, Surface Science, vol.411, issue.3, p.865, 1998.
DOI : 10.1016/S0039-6028(98)00399-9

]. P. Ruterana, B. Barbaray, A. Béré, P. Vermaut, A. Hairie et al., stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides, Physical Review B, vol.59, issue.24, p.15917, 1999.
DOI : 10.1103/PhysRevB.59.15917

A. Béré and A. Serra, On the atomic structures, mobility and interactions of extended defects in GaN: dislocations, tilt and twin boundaries, Philosophical Magazine, vol.70, issue.15, p.2159, 2006.
DOI : 10.1103/PhysRevB.61.16033

Z. Q. Wang and D. Stroud, Monte Carlo study of liquid GaAs: Bulk and surface properties, Physical Review B, vol.42, issue.8, p.5353, 1990.
DOI : 10.1103/PhysRevB.42.5353

]. X. Zhou, J. Zhao, X. Chen, and W. Lu, clusters using density-functional theory, Physical Review A, vol.72, issue.5, p.53203, 2005.
DOI : 10.1103/PhysRevA.72.053203

]. H. Lei, J. Chen, and P. Ruterana, Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys, Journal of Applied Physics, vol.108, issue.10, p.103503, 2010.
DOI : 10.1063/1.3509147

I. Vurgaftman, J. R. Meyer, and L. R. Ram-mohan, Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, p.5815, 2001.
DOI : 10.1063/1.1368156

B. R. Bennett, R. Magno, J. B. Boos, . Walter, M. G. Kruppa et al., Antimonide-based compound semiconductors for electronic devices: A review, Solid-State Electronics, vol.49, issue.12, p.1875, 2005.
DOI : 10.1016/j.sse.2005.09.008

S. Huang, G. Balakrishnan, and D. L. Huffaker, Interfacial misfit array formation for GaSb growth on GaAs, Journal of Applied Physics, vol.105, issue.10, p.103104, 2009.
DOI : 10.1063/1.3129562

P. M. Maree, J. C. Barbour, J. F. Van-der-veen, K. L. Kavanagh, C. W. Bulle-lieuwma et al., Generation of misfit dislocations in semiconductors, Journal of Applied Physics, vol.62, issue.11, p.4413, 1987.
DOI : 10.1063/1.339078

A. Georgakilas, P. Panayotatos, J. Stoemenos, J. L. Mourrain, and A. Christou, Achievements and limitations in optimized GaAs films grown on Si by molecular???beam epitaxy, Journal of Applied Physics, vol.71, issue.6, p.2679, 1992.
DOI : 10.1063/1.351041

W. Qian, M. Skowronski, R. Kaspi, M. D. Graef, and V. P. Dravid, Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates, Journal of Applied Physics, vol.81, issue.11, p.7268, 1997.
DOI : 10.1063/1.365324

A. Vila, A. Cornet, J. R. Morante, P. Ruterana, M. Loubradou et al., Structure of 60?? dislocations at the GaAs/Si interface, Journal of Applied Physics, vol.79, issue.2, p.676, 1996.
DOI : 10.1063/1.360812

J. H. Kim, T. Y. Seong, N. J. Mason, and P. J. Walker, Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy, Journal of Electronic Materials, vol.65, issue.5, p.466, 1998.
DOI : 10.1007/s11664-998-0178-0

W. Qian, M. Skowronski, and R. Kaspi, Dislocation Density Reduction in GaSb Films Grown on GaAs Substrates by Molecular Beam Epitaxy, Journal of The Electrochemical Society, vol.144, issue.4, p.1430, 1997.
DOI : 10.1149/1.1837606

S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L. R. Dawson et al., Strain relief by periodic misfit arrays for low defect density GaSb on GaAs, Applied Physics Letters, vol.88, issue.13, p.131911, 2006.
DOI : 10.1063/1.2172742

J. M. Yarborough, Y. Y. Lai, Y. Kaneda, J. Hader, J. V. Moloney et al., Record pulsed power demonstration of a 2?????m GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate, Applied Physics Letters, vol.95, issue.8, p.81112, 2009.
DOI : 10.1063/1.3212891

N. Akahane, S. Yamanoto, A. Gozu, N. Ueta, and . Ohtani, Heteroepitaxial growth of GaSb on Si(001) substrates, Journal of Crystal Growth, vol.264, issue.1-3, p.21, 2004.
DOI : 10.1016/j.jcrysgro.2003.12.041

Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, S. M. Cho et al., Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study, Applied Physics Letters, vol.88, issue.24, p.241907, 2006.
DOI : 10.1063/1.2209714

Y. H. Kim, Y. K. Noh, M. D. Kim, J. E. Oh, and K. S. Chung, Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy method, Thin Solid Films, vol.518, issue.8, p.2280, 2010.
DOI : 10.1016/j.tsf.2009.09.120

2. J. Brown, M. P. Grimshaw, D. A. Ritchie, and G. A. Jones, Variation of surface morphology with substrate temperature for molecular beam epitaxially grown GaSb(100) on GaAs(100), Applied Physics Letters, vol.69, issue.10, p.1468, 1996.
DOI : 10.1063/1.116910

S. H. Huang, G. Balakrishnan, M. Mehta, A. Khoshakhlagh, L. R. Dawson et al., Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb, Applied Physics Letters, vol.90, issue.16, p.161902, 2007.
DOI : 10.1063/1.2723649

A. Rocher and E. Snoeck, Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy, Materials Science and Engineering: B, vol.67, issue.1-2, p.62, 1999.
DOI : 10.1016/S0921-5107(99)00210-X

M. O. Manasreh, Antimonide Related Strained Layer Heterostructures (Gordon and Breach Science Publishers, p.107, 1997.

M. J. Hytch, E. Snoek, and R. Kilaas, Quantitative measurement of displacement and strain fields from HREM micrographs, Ultramicroscopy, vol.74, issue.3, p.131, 1998.
DOI : 10.1016/S0304-3991(98)00035-7

S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen, Extracting Quantitative Information from High Resolution Electron Microscopy, physica status solidi (b), vol.190, issue.1, p.247, 2001.
DOI : 10.1002/1521-3951(200109)227:1<247::AID-PSSB247>3.0.CO;2-F

S. Kret, P. Dluzewski, P. Dluzewski, and E. Sobczak, Measurement of dislocation core distribution by digital processing of high-resolution transmission electron microscopy micrographs: a new technique for studying defects, Journal of Physics: Condensed Matter, vol.12, issue.49, p.10313, 2000.
DOI : 10.1088/0953-8984/12/49/334

S. Kret, P. Ruterana, and G. Nouet, Analysis of strain in the {112??0} prismatic fault in GaN using digital processing of high-resolution transmission electron microscopy images, Journal of Physics: Condensed Matter, vol.12, issue.49, p.10249, 2000.
DOI : 10.1088/0953-8984/12/49/325

D. Huffaker, Novel monolithic integration of III-Sb materials on Si substrates, SPIE Newsroom, 2008.

I. Németh, B. Kunert, W. Stolz, and K. Volz, Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions, Journal of Crystal Growth, vol.310, issue.7-9, p.1595, 2008.
DOI : 10.1016/j.jcrysgro.2007.11.127

M. Copel, M. C. Reuter, E. Kaxiras, and R. M. Tromp, Surfactants in epitaxial growth, Physical Review Letters, vol.63, issue.6, p.632, 1989.
DOI : 10.1103/PhysRevLett.63.632

E. Z. Liu and C. Y. Wang, Single adatom site exchange during the Ge growth on group V element covered Si(001), Scripta Materialia, vol.56, issue.2, p.113, 2007.
DOI : 10.1016/j.scriptamat.2006.09.017

L. L. Chang and L. Esaki, Electronic properties of InAs???GaSb superlattices, Surface Science, vol.98, issue.1-3, p.70, 1980.
DOI : 10.1016/0039-6028(80)90477-X

C. A. Chang, L. L. Chang, E. E. Mendez, M. S. Christie, and L. Esaki, Electron densities in InAs???AlSb quantum wells, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.2, issue.2, p.214, 1984.
DOI : 10.1116/1.582786

G. Tuttle, H. Kroemer, and J. H. English, Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells, Journal of Applied Physics, vol.65, issue.12, p.5239, 1989.
DOI : 10.1063/1.343167

G. Tuttle, H. Kroemer, and J. H. English, Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface, Journal of Applied Physics, vol.67, issue.6, p.3032, 1990.
DOI : 10.1063/1.345426

P. M. Marée, J. C. Barbour, J. F. Van-der-veen, K. L. Kavanagh, C. W. Bulle-lieuwma et al., Generation of misfit dislocations in semiconductors, Journal of Applied Physics, vol.62, issue.11, p.4413, 1987.
DOI : 10.1063/1.339078

A. Vilà, A. Cornet, J. R. Morante, M. Loubradou, R. Bonnet et al., Atomic core structure of Lomer dislocation at GaAs/(001)Si interface, Philosophical Magazine A, vol.21, issue.1, p.85, 1995.
DOI : 10.1063/1.343380

A. Vilà, A. Cornet, J. R. Morante, P. Ruterana, M. Loubradou et al., Structure of 60?? dislocations at the GaAs/Si interface, Journal of Applied Physics, vol.79, issue.2, p.676, 1996.
DOI : 10.1063/1.360812

A. Rocher and E. Snoeck, Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy, Materials Science and Engineering: B, vol.67, issue.1-2, p.62, 1999.
DOI : 10.1016/S0921-5107(99)00210-X

J. Narayan and S. Oktyabrsky, Formation of misfit dislocations in thin film heterostructures, Journal of Applied Physics, vol.92, issue.12, p.7122, 2002.
DOI : 10.1063/1.1521789

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness, Journal of Applied Physics, vol.109, issue.2, p.23509, 2011.
DOI : 10.1063/1.3532053

S. A. Dregia and J. P. Hirth, A rebound mechanism for Lomer dislocation formation in strained layer structures, Journal of Applied Physics, vol.69, issue.4, p.2169, 1991.
DOI : 10.1063/1.348745

C. H. Henager-jr and R. G. Hoagland, A rebound mechanism for misfit dislocation creation in metallic nanolayers, Scripta Materialia, vol.50, issue.5, p.701, 2004.
DOI : 10.1016/j.scriptamat.2003.09.002

Y. Chen, X. W. Lin, Z. Liliental-weber, J. Washburn, J. F. Klem et al., As islands grown on GaAs(001) substrates, Applied Physics Letters, vol.68, issue.1, p.111, 1996.
DOI : 10.1063/1.116773

S. Huang, G. Balakrishnan, and D. L. Huffaker, Interfacial misfit array formation for GaSb growth on GaAs, Journal of Applied Physics, vol.105, issue.10, p.103104, 2009.
DOI : 10.1063/1.3129562

A. Jallipalli, G. Balakrishnan, S. H. Huang, T. J. Rotter, K. Nunna et al., Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90?? Misfit Dislocations, Nanoscale Research Letters, vol.67, issue.4, p.1458, 2009.
DOI : 10.1007/s11671-009-9420-9

S. Huang, Microscopy Study of Extreme Lattice Mismatched Heteroepitaxy Using Interfacial Misfit Arrays, The University of New Mexico, 2007.

A. J. Mcgibbon, S. J. Pennycook, and J. E. Angelo, Direct Observation of Dislocation Core Structures in CdTe/GaAs(001), Science, vol.269, issue.5223, p.519, 1995.
DOI : 10.1126/science.269.5223.519

S. Lopatin, S. J. Pennycook, J. Narayan, and G. Duscher, -contrast imaging of dislocation cores at the GaAs/Si interface, Applied Physics Letters, vol.81, issue.15, p.2728, 2002.
DOI : 10.1063/1.1511808

URL : https://hal.archives-ouvertes.fr/in2p3-00757447

J. N. Stirman, P. A. Crozier, D. J. Smith, G. Phillipp, S. Brill et al., Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface, Applied Physics Letters, vol.84, issue.14, p.2530, 2004.
DOI : 10.1063/1.1697625

S. H. Vajargah, M. Couillard, K. Cui, S. G. Tavakoli, B. Robinson et al., Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy, Applied Physics Letters, vol.98, issue.8, p.82113, 2011.
DOI : 10.1063/1.3551626

S. J. Pennycook and L. A. Boatner, Chemically sensitive structure-imaging with a scanning transmission electron microscope, Nature, vol.336, issue.6199, p.565, 1988.
DOI : 10.1038/336565a0

P. M. Voyles, D. A. Muller, J. L. Grazul, P. H. Citrin, and H. L. Gossmann, Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si, Nature, vol.416, issue.6883, p.826, 2002.
DOI : 10.1038/416826a

M. Couillard, G. Radtke, A. P. Knights, and G. A. Botton, Three-Dimensional Atomic Structure of Metastable Nanoclusters in Doped Semiconductors, Physical Review Letters, vol.107, issue.18, p.186104, 2011.
DOI : 10.1103/PhysRevLett.107.186104

S. Kret, P. Paweldlu?ewski, E. Dlu?ewski, and . Sobczak, Measurement of dislocation core distribution by digital processing of high-resolution transmission electron microscopy micrographs: a new technique for studying defects, Journal of Physics: Condensed Matter, vol.12, issue.49, p.10313, 2000.
DOI : 10.1088/0953-8984/12/49/334

C. W. Snyder, J. F. Mansfield, and B. G. Orr, As on GaAs(100), Physical Review B, vol.46, issue.15, p.9551, 1992.
DOI : 10.1103/PhysRevB.46.9551

F. K. Legoues, M. C. Reuter, J. Tersoff, M. Hammar, and R. M. Tromp, Cyclic Growth of Strain-Relaxed Islands, Physical Review Letters, vol.73, issue.2, p.300, 1994.
DOI : 10.1103/PhysRevLett.73.300

J. Houze, S. Kim, S. Kim, S. C. Erwin, and L. J. Whitman, Structure of AlSb(001) and GaSb(001) surfaces under extreme Sb-rich conditions, Physical Review B, vol.76, issue.20, p.205303, 2007.
DOI : 10.1103/PhysRevB.76.205303

C. Hogan, R. Magri, and R. Del-sole, Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface, Physical Review Letters, vol.104, issue.15, p.157402, 2010.
DOI : 10.1103/PhysRevLett.104.157402

K. H. Chang, P. K. Bhattacharya, and R. Gibala, Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces, Journal of Applied Physics, vol.66, issue.7, p.2993, 1989.
DOI : 10.1063/1.344183

S. J. Pennycook, Advances in Image and Electron Physics, 2002.

E. Carlino and V. Grillo, Atomic-resolution quantitative composition analysis using scanning transmission electron microscopy Z-contrast experiments, Physical Review B, vol.71, issue.23, p.235303, 2005.
DOI : 10.1103/PhysRevB.71.235303

Y. Wang, P. Ruterana, H. P. Lei, J. Chen, S. Kret et al., Investigation of the anisotropic strain relaxation in GaSb islands on GaP, Journal of Applied Physics, vol.110, issue.4, p.43509, 2011.
DOI : 10.1063/1.3622321

URL : https://hal.archives-ouvertes.fr/hal-00807162

C. T. Koch, Determination of Core Structure Periodicity and Point Defect Density Along Dislocations, 2002.

F. H. Stillinger and T. A. Weber, Computer simulation of local order in condensed phases of silicon, Physical Review B, vol.31, issue.8, pp.5262-5271, 1985.
DOI : 10.1103/PhysRevB.31.5262

J. M. Kang, M. Nouaoura, L. Lassabatère, and A. Rocher, Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001), Journal of Crystal Growth, vol.143, issue.3-4, p.115, 1994.
DOI : 10.1016/0022-0248(94)90045-0

J. G. Zhu and C. B. Carter, 60?? dislocations in (001) GaAs/Si interfaces, Philosophical Magazine A, vol.31, issue.3, p.319, 1990.
DOI : 10.1557/PROC-144-285

P. Komninou, J. Stoemenos, G. P. Dimitrakopulos, and T. Karakostas, Misfit dislocations and antiphase domain boundaries in GaAs/Si interface, Journal of Applied Physics, vol.75, issue.1, p.143, 1994.
DOI : 10.1063/1.355903

H. Hojo, E. Tochigi, T. Mizoguchi, H. Ohta, N. Shibata et al., Atomic structure and strain field of threading dislocations in CeO2 thin films on yttria-stabilized ZrO2, Applied Physics Letters, vol.98, issue.15, p.153104, 2011.
DOI : 10.1063/1.3575566

S. Huang, Microscopy Study of Extreme Lattice Mismatched Heteroepitaxy Using Interfacial Misfit Arrays, The University of New Mexico, 2007.

Y. Wang, P. Ruterana, S. Kret, J. Chen, L. Desplanque et al., Mechanism of formation of the misfit dislocations at the cubic materials interfaces, Applied Physics Letters, vol.100, issue.26
DOI : 10.1063/1.4731787

URL : https://hal.archives-ouvertes.fr/hal-00787021

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces, EPL (Europhysics Letters), vol.97, issue.6, p.68011, 2012.
DOI : 10.1209/0295-5075/97/68011

URL : https://hal.archives-ouvertes.fr/hal-00786985

Y. Wang, P. Ruterana, H. P. Lei, J. Chen, S. Kret et al., Investigation of the anisotropic strain relaxation in GaSb islands on GaP, Wallart. Investigation of the anisotropic strain relaxation in GaSb island on GaP, p.43509, 2011.
DOI : 10.1063/1.3622321

URL : https://hal.archives-ouvertes.fr/hal-00807162

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness, Journal of Applied Physics, vol.109, issue.2, p.23509, 2011.
DOI : 10.1063/1.3532053

Y. Wang, H. Wang, C. Ye, J. Zhang, H. B. Wang et al., Film Gate Dielectric Prepared by Pulsed Laser Deposition in Nitrogen: Role of Rapid Thermal Annealing and Gate Electrode, ACS Applied Materials & Interfaces, vol.3, issue.10, p.3813, 2011.
DOI : 10.1021/am2008695

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment, MRS Proceedings, pp.11-1324, 2011.
DOI : 10.1016/j.sse.2005.09.008

URL : https://hal.archives-ouvertes.fr/hal-00799993

L. Desplanque, S. Kazzi, J. L. Codron, Y. Wang, P. Ruterana et al., AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs, AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructure on GaAs, p.262103, 2012.
DOI : 10.1063/1.4730958

URL : https://hal.archives-ouvertes.fr/hal-00786990

S. Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana et al., Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP, Journal of Applied Physics, vol.111, issue.12, p.123506, 2012.
DOI : 10.1063/1.4729548

URL : https://hal.archives-ouvertes.fr/hal-00786989

S. Kazzi, L. Desplanque, C. Coinon, Y. Wang, P. Ruterana et al., GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP, GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001)GaP, p.192111, 2010.
DOI : 10.1063/1.3515867

URL : https://hal.archives-ouvertes.fr/hal-00548719

A. Olivier, N. Wichmann, J. J. Mo, A. Noudeviwa, Y. Roelens et al., Fabrication and characterization of 200 nm self-aligned In0, 53Ga0.47As MOSFET Indium Phosphide & Related Materials (IPRM) DOI:10.1109/ICIPRM, p.5515926, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00549921

Y. Wang, H. Wang, J. Zhang, H. B. Wang, C. Ye et al., ionized nitrogen, Applied Physics Letters, vol.95, issue.3, p.32905, 2009.
DOI : 10.1063/1.3184577

C. Ye, Y. Wang, J. Zhang, J. Q. Zhang, H. Wang et al., Evidence of interface conversion and electrical characteristics improvement of ultra-thin HfTiO films upon rapid thermal annealing, Applied Physics Letters, vol.99, issue.18, p.182904, 2011.
DOI : 10.1063/1.3658396

C. Ye, Y. Wang, Y. Ye, J. Zhang, and G. H. Li, Preparation and photoluminescence of undoped ZnTiO3 thin films, Journal of Applied Physics, vol.106, issue.3, p.33520, 2009.
DOI : 10.1063/1.3190820

H. Wang, Y. Wang, C. Ye, J. Feng, B. Y. Wang et al., Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition, Applied Physics Letters, vol.93, issue.20, p.202904, 2008.
DOI : 10.1063/1.3033526

H. Wang, Y. Wang, J. Feng, C. Ye, B. Y. Wang et al., Structure and electrical properties of HfO 2 high-k films prepared by pulsed laser deposition on Si(100), Appl, p.681, 2008.

J. X. Duan, H. Wang, H. B. Wang, J. Zhang, S. Wu et al., Mn-doped ZnO nanotubes: from facile solution synthesis to room temperature ferromagnetism, CrystEngComm, vol.20, issue.4, p.1330, 2012.
DOI : 10.1039/C1CE06221B

M. Dong, H. Wang, C. Ye, L. Shen, Y. Wang et al., Structure and electrical properties of sputtered TiO2/ZrO2 bi-layer composite dielectrics upon annealing in nitrogen, Nanoscale Research Letters, vol.7, issue.1, p.31, 2012.
DOI : 10.1186/1556-276X-7-31

M. Dong, H. Wang, L. Shen, Y. Ye, C. Ye et al., Dielectric property and electrical conduction mechanism of ZrO2???TiO2 composite thin films, Journal of Materials Science: Materials in Electronics, vol.61, issue.1, p.174, 2012.
DOI : 10.1007/s10854-011-0378-x

H. B. Wang, H. Wang, J. Zhang, F. J. Yang, Y. Wang et al., Formation and magnetic properties of a large-scale FePt nanoparticale monolayer on silicon substrate, Physica Scripta, vol.139, p.14071, 2010.

C. Ye, H. Wang, J. Zhang, Y. Ye, Y. Wang et al., Composition dependence of band alignment and dielectric constant for Hf1???xTixO2 thin films on Si (100), Journal of Applied Physics, vol.107, issue.10, p.104103, 2010.
DOI : 10.1063/1.3380588

B. Y. Wang, H. Wang, C. Ye, Y. Wang, Y. Ye et al., Effect of a silicon nitride buffer layer on the electrical properties of tantalum pentoxide films, Microelectronic Engineering, vol.87, issue.4, p.597, 2010.
DOI : 10.1016/j.mee.2009.08.020

H. B. Wang, M. J. Zhou, F. J. Yang, J. Wang, Y. Jiang et al., Monolayer Assembly and Fixation of FePt Nanoparticles: Microstructure and Magnetic Properties, Chemistry of Materials, vol.21, issue.2, p.404, 2009.
DOI : 10.1021/cm802778t

H. Wang, Z. P. Zhang, X. N. Wang, Q. Mo, Y. Wang et al., Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation, Nanoscale Research Letters, vol.15, issue.9, p.309, 2008.
DOI : 10.1007/s11671-008-9156-y

F. J. Yang, H. Wang, J. Zhang, Y. Wang, H. B. Wang et al., Influence of silicides formation on microstructure and magnetic properties of FePt thin films, Journal of Physics D: Applied Physics, vol.41, issue.23, p.235003, 2008.
DOI : 10.1088/0022-3727/41/23/235003

Y. Wang, P. Ruterana, S. Kret, J. Chen, L. Desplanque et al., The atomic structure and formation mechanism of misfit dislocations by HAADF investigation, 2012.

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, Misfit dislocation and strain relaxation at GaSb/GaAs interface versus substrate surface treatment, 2011.
DOI : 10.1557/opl.2011.841

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, TEM analysis of the dislocation mechanism in III-V Heterostructures grown by molecular beam epitaxy, Symposium RR, 2011.

Y. Wang, P. Ruterana, L. Desplanque, S. Kazzi, and X. Wallart, The structure of dislocations in metamorphic III-V heterostructures grown by MBE, EMRS 2010 Spring meeting, Symposium Q, 2010.

S. Kazzi, L. Desplanque, C. Coinon, Y. Wang, P. Ruterana et al., Influence of Sb overpressure on the anisotropic transport properties of InAs/AlSb heterostructures grown on highly mismatched substrates, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00797368

S. Kazzi, L. Desplanque, C. Coinon, Y. Wang, P. Ruterana et al., Strain relaxation of GaSb islands on GaP and GaAs substrates for high mobility AlSb/InAs heterostructurese, The 20th European workshop on Hetrostructure Technology, 2011.

S. Kazzi, L. Desplanque, C. Coinon, Y. Wang, P. Ruterana et al., Strain relaxation by misfit dislocation array at the GaSb/GaP, 16th International conference on Molecular Beam Epitaxy, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00573658

Y. Wang, Characterization of core structure and Burgers vector of GaSb/GaAs misfit dislocation by HAADF-STEM and molecular dynamic simulation, 2012.

Y. Wang, The atomic structure and formation mechanism of misfit dislocations at GaSb/GaAs interface, CEMES-CNRS, 2012.

Y. Wang, TEM analysis of misfit dislocation and strain relaxation at III-V heterostructure interfaces, Plasma & Coating Physics Division, 2012.