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Analyse théorique et physique de nouveaux matériaux à base de chalcogénures convenant aux Mémoires à Changements de Phases

Abstract : Phase Change Memories are suitable for the next generation of non volatiles memories due to high programmation speed and endurance. However, two major improvements need to be made in order to enter memories market, the short retention time at high temperature, and the important electric consumption. This thesis focuses on the development of new phase change materials to replace the reference material, Ge2Sb2Te5, insuitable for embedded memories applications working at high temperatures. The behavior of binary compounds GeTe and GeSb has been investigated and compared to the reference material during both the crystallization of the « as deposited » amorphous and the « melt quenched » amorphous materials. Indeeed it is important to study the « melt quenched » amorphous state of the material to be as close as possible to the cycled material in the devices. So, the crystallization mechanism of GeTe checked by the crystallization study of the amorphous « melt quenched » by laser annealing is in agreement with the in situ TEM observation (thermal annealing) of the crystallization. The addition of “doping” elements in the binary compounds has also been performed to improve the thermal stability of amorphous undoped materials. These “doping” elements allow a current reset decrease, or a later formation of « voids » during cycling.
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Audrey Bastard. Analyse théorique et physique de nouveaux matériaux à base de chalcogénures convenant aux Mémoires à Changements de Phases. Autre. Université de Grenoble, 2012. Français. ⟨NNT : 2012GRENI021⟩. ⟨tel-00771412⟩

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