A. Q. Huang, M. L. Crow, G. T. Heydt, J. P. Zheng, and S. J. Dale, The Future Renewable Electric Energy Delivery and Management (FREEDM) System: The Energy Internet, Proceedings of the IEEE, pp.133-148, 2011.
DOI : 10.1109/JPROC.2010.2081330

S. Bernet, Recent developments of high power converters for industry and traction applications, IEEE Transactions on Power Electronics, vol.15, issue.6, 2000.
DOI : 10.1109/63.892825

P. Brosselard, X. Jorda, M. Vellvehi, A. Perez-tomas, P. Godignon et al., 1.2kV Rectifiers Thermal Behaviour : comparison between Si PiN, 4H-SiC Schottky and JBS diodes, Power Electronics and Applications, 2007 European Conference on, pp.1-9, 2007.
URL : https://hal.archives-ouvertes.fr/hal-00358819

V. Banu, P. Brosselard, X. Jordá, J. Montserrat, P. Godignon et al., Behaviour of 1.2kV SiC JBS diodes under repetitive high power stress, Microelectronics Reliability, vol.48, issue.8-9, pp.1444-1448, 2008.
DOI : 10.1016/j.microrel.2008.07.054

P. Brosselard, N. Camara, X. Jordà, M. Vellvehi, E. Bano et al., Reliability Aspects of High Voltage 4H-SiC JBS Diodes, Materials Science Forum, vol.600, issue.603, pp.600-603, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.935

Y. Tanaka, H. Ohashi, K. Sung, K. Takao, K. Wada et al., Development of 6kV-class SiC-PiN diodes for high-voltage power inverter, proceedings of the 22nd International Symposium on Power Semiconductor Devices and ICs, pp.213-216, 2010.

N. Phankong, T. Funaki, and T. Hikihara, Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET, IEICE Electronics Express, pp.480-486, 2010.
DOI : 10.1587/elex.7.480

B. S. and -. J. Palmour, 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation, Materials Science Forum Vols, pp.679-680, 2011.

G. Feng, J. Suda, and T. Kimoto, In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate, Materials Science Forum, vol.645, issue.648, pp.645-648, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.287

R. Perez, Planar Edge Terminations and Related Manufacturing Process Technology for High Power 4H-SiC Diodes, 2005.

S. Kozawa, K. Seki, A. , Y. Yamamoto, T. Ujihara et al., Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method, Materials Science Forum, vol.679, issue.680, pp.679-680, 2011.
DOI : 10.4028/www.scientific.net/MSF.679-680.28

A. A. Rempel, W. Sprengel, K. Blaurock, K. J. Reichle, J. Major et al., Identification of Lattice Vacancies on the Two Sublattices of SiC, Physical Review Letters, vol.89, issue.18, 2002.
DOI : 10.1103/PhysRevLett.89.185501

M. N. Yoder, Wide bandgap semiconductor materials and devices, IEEE Transactions on Electron Devices, vol.43, issue.10, pp.1633-1636, 1996.
DOI : 10.1109/16.536807

R. Rupp, SiC base material : joy and sorrow of the SiC device manufacturer, ICSCRM, 2011.

E. O. Johnson, Physical limitations on frequency and power parameters of transistors, IRE International Convention Record, pp.163-177, 1963.
DOI : 10.1109/IRECON.1965.1147520

R. W. Keyes, Figure of merit for semiconductors for high-speed switches, Proc. IEEE, pp.225-232, 1972.
DOI : 10.1109/PROC.1972.8593

B. J. Baliga, Semiconductors for high???voltage, vertical channel field???effect transistors, Journal of Applied Physics, vol.53, issue.3, pp.1759-1764, 1982.
DOI : 10.1063/1.331646

B. J. Baliga, Power semiconductor device figure of merit for high-frequency applications, IEEE Electron Device Letters, vol.10, issue.10, pp.455-457, 1989.
DOI : 10.1109/55.43098

E. A. Powell, K. D. Imhoff, A. Hobart, A. R. Rivera-lopez, and . Hefner, Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers, Electron Devices IEEE Transactions on, vol.55, issue.8, pp.1864-1870, 2008.

C. R. Crowell, Current transport in metal-semiconductor barriers, Solid-State Electronics, vol.9, issue.11-12, pp.1035-1048, 1966.
DOI : 10.1016/0038-1101(66)90127-4

F. A. Padovani and R. Stratton, Field and thermionic-field emission in Schottky barriers, Solid-State Electronics, vol.9, issue.7, pp.695-707, 1966.
DOI : 10.1016/0038-1101(66)90097-9

A. Laref and S. Laref, Electronic and optical properties of SiC polytypes using a transferable semi-empirical tight-binding model, physica status solidi (b), pp.89-100, 2008.
DOI : 10.1002/pssb.200642312

M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, R. Singh, J. W. Palmour et al., Steady-state and transient characteristics of 10 kV 4H-SiC diodes, Solid-State Electronics, vol.48, issue.5, pp.807-811, 2004.
DOI : 10.1016/j.sse.2003.11.001

S. Harada and Y. Namikawa, The influence of In-grown Staking Faults on the reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes, Materials Science Forum, pp.556-557, 2007.

T. Endo, H. Fujiwara, T. Morino, T. Katsuno, M. Konishi et al., Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes, proceedings ICSCRM 2011, 2011.

B. J. Baliga, The pinch rectifier: A low-forward-drop high-speed power diode, IEEE Electron Device Letters, vol.5, issue.6, pp.641-174, 1984.
DOI : 10.1109/EDL.1984.25884

G. M. Dolny, R. L. Woodin, T. Witt, and J. Shovlin, The Impact of Schottky Barrier Tunneling on SiC-JBS Performance, Materials Science Forum, vol.615, issue.617, pp.615-617, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.667

Y. Sugawara, K. Asano, and R. Saito, 3.6kV 4H-SiC JBS diodes with low RonS, Materials Science Forum, pp.338-342, 2000.
URL : https://hal.archives-ouvertes.fr/jpa-00217530

R. Perez, N. Mestres, M. Vellvehi, P. Godignon, and J. Millan, Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiC, Semiconductor Science and Technology, vol.21, issue.5, pp.670-676, 2006.
DOI : 10.1088/0268-1242/21/5/018
URL : https://hal.archives-ouvertes.fr/hal-00309204

A. Kinoshita, T. Ohyanagi, T. Yatsuo, K. Fukuda, H. Okumura et al., Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height, Materials Science Forum, vol.645, issue.648, pp.893-896, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.893

J. Nishio, C. Ota, T. Hatakeyama, T. Shinohe, K. Kojima et al., Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs), IEEE Transactions on Electron Devices, vol.55, issue.8, pp.1954-1960, 2008.
DOI : 10.1109/TED.2008.926666

F. Dahlquist, J. O. Svedberg, C. Zetterling, M. Ostling, B. Breitholtz et al., A 2.8kV, Forward Drop JBS Diode with Low Leakage, Materials Science Forum, vol.338, issue.342, pp.338-342, 2000.
DOI : 10.4028/www.scientific.net/MSF.338-342.1179

T. Nakamura, T. Miyanagi, I. Kamata, T. Jikimoto, and H. Tsuchida, A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature, IEEE Electron Device Letters, vol.26, issue.2, pp.99-101, 2005.
DOI : 10.1109/LED.2004.841473
URL : https://hal.archives-ouvertes.fr/hal-01438515

K. Vassilevski, I. P. Nikitina, A. B. Horsfall, N. G. Wright, and C. M. Johnson, Nickel Silicide Schottky diodes on commercial 4H-SiC Epitaxial wafers, Materials Science Forum, pp.645-648, 2010.

J. Hu, L. X. Li, P. Alexandrov, X. H. Wang, and J. H. Zhao, 5kV, 9.5A SiC JBS Diodes with Non-Uniform Guard Ring Edge termination for high power Switching Application, Materials Science Forum, pp.600-603, 2008.

J. H. Zhao, P. Alexandrov, and X. Li, Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes, IEEE Electron Device Letters, vol.24, issue.6, pp.402-404, 2003.
DOI : 10.1109/LED.2003.813370

Q. Zhang, A. K. Agarwal, A. A. Burk, M. J. O-'loughlin, J. J. Palmour et al., Influence of Schockley Stacking Fault Generation on Electrical Behaviour of 4H-SiC 10kV MPS diodes, Materials Science Forum, pp.645-648, 2010.

R. Rupp, M. Treu, S. Voss, F. Bjork, and T. Reimann, "2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness, 2006 IEEE International Symposium on Power Semiconductor Devices & IC's, pp.1-4, 2006.
DOI : 10.1109/ISPSD.2006.1666123

Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour et al., 12- 19kV 4H-SiC pin Diodes with Low Power Loss, Power Semiconductor Devices and ICs. Proceedings of the 13th International Symposium on, pp.27-30, 2001.

P. Brosselard, V. Banu, N. Camara, and A. Perez-tomas, Recent progress in 3.3kV SiC diodes, Materials Science and Engineering: B, vol.165, issue.1-2, pp.15-17, 2009.
DOI : 10.1016/j.mseb.2008.11.044

B. Hull, M. Das, J. Richmond, J. Sumakeris, R. Leonard et al., A 180Amp/4.5kV 4H-SiC PiN Diode for High Current Power Modules, 2006 IEEE International Symposium on Power Semiconductor Devices & IC's. IEEE, pp.1-4, 2006.

D. Peters, W. Bartsch, B. Thomas, and R. Sommer, 6.5kV SiC PiN Diodes with Improved Forward Characteristics, Materials Science Forum, vol.645648, pp.901-904, 2010.
URL : https://hal.archives-ouvertes.fr/jpa-00251925

M. Skowronski and S. Ha, Degradation of hexagonal silicon-carbide-based bipolar devices, Journal of Applied Physics, vol.99, issue.1, p.11101, 2006.
DOI : 10.1063/1.2159578

T. Nakamura, M. Miura, N. Kawamoto, Y. Nakano, T. Otsuka et al., Development of SiC diodes, power MOSFETs and intelligent power modules, physica status solidi (a), vol.527, issue.529, pp.2403-2416, 2009.
DOI : 10.1002/pssa.200925196

S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour et al., Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures, Semiconductor Science and Technology, vol.24, issue.7, p.75011, 2009.
DOI : 10.1088/0268-1242/24/7/075011

A. Schöner, M. Bakowski, P. Ericsson, H. Strömberg, H. Nagasawa et al., Realization of Large Area Vertical 3C-SiC MOSFET Devices, Materials Science Forum, vol.527, issue.529, pp.527-529, 2006.
DOI : 10.4028/www.scientific.net/MSF.527-529.1273

N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui et al., Successful dev of 1.2kV 4H-SiC MOSFETs with very low on Resistance of 5mOhm.cm2, Power Semiconductor Devices and IC's IEEE International Symposium on, pp.1-4, 2005.

K. Matocha, 1400Volt, 5m\W.cm?2 SiC MOSFETs for High-Speed Switching, proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs, 2010.

Y. Sui, T. Tsuji, J. Cooper, and J. A. , On-State Characteristics of SiC power UMOS- FETs on 115-µm drift Layers, Electron Device Letters, pp.255-257, 2005.

J. B. Merrett and . Casady, Fast Switching (41 MHz), 2.5 m?.cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications, Materials Science Forum, pp.527-529, 2006.

Y. Tanaka, K. Yano, M. Okamoto, A. Takatsuka, K. Fukuda et al., Fabrication of 700V SiC-SIT with ultra-low on-Resistance of 1.01m?.cm2, Material Science Forum, pp.527-529, 2006.

Y. Tanaka, A. Takatsuka, T. Yatsuo, K. Arai, and K. Yano, 1200V, 35A SiC- BGSIT with improved blocking gain of 480, Proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs, pp.357-360, 2010.

L. Yuzhu, P. Alexandrov, and J. H. Zhao, 1.88m?.cm2 1650-V Normally on 4H-SiC TI-VJFET, Electron Devices IEEE Transactions on, vol.55, issue.8, pp.1880-1886, 2008.

J. H. Zhao, K. Tone, P. Alexandrov, L. Fursin, and M. Weiner, 1710-V 2.77-m/spl Omega/cm^{sub 2} 4H-SiC trenched and implanted vertical junction field-effect transistors, IEEE Electron Device Letters, vol.24, issue.2, pp.81-83, 2003.
DOI : 10.1109/LED.2003.808841

V. Veliadis, T. Mcnutt, M. Snook, H. Hearne, P. Potyraj et al., A 1680-V (at 1 mA/cm2) 54-A (at 780 W/cm2) Normally-On 4H-SiC JFET With 0.143cm2 Active Area, IEEE Electron Device Letters, pp.1132-1134, 2008.

V. Veliadis, M. Snook, T. Mcnutt, H. Hearne, P. Potyraj et al., A 2055-V (at 0.7mA/cm2) 24-A (at 706W/cm2) normally On 4H-SiC JFET With 6.8mm2 Active Area and Blocking-Voltage Capability Reaching the Material Limit, Electron Device Letters, pp.1132-1134, 2008.

P. Friedrichs, H. Mitlehner, R. Schorner, K. Dohnke, R. Elpelt et al., Stacked high voltage switch based on SiC VJFETs, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings., pp.139-142, 2003.
DOI : 10.1109/ISPSD.2003.1225249

V. Veliadis, E. J. Stewart, H. Hearne, M. Snook, A. Lelis et al., 9kV Normally-On Vertical-Channel SiC JFET for Unipolar Operation, Electron Device Letters, pp.470-472, 2010.

H. H. Yokoyama and . Hozouji, Normally-off SiC JFET inverter with low-voltage control and a high-speed drive circuit, Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on, pp.217-220, 2007.

A. Ritenour, D. C. Sheridan, V. Bondarenko, and J. B. Casady, Performance of 15mm2 1200V Normally-Off SiC VJFETs with 120A Saturation Current, Materials Science Forum, pp.645-648, 2010.

A. Ritenour, D. C. Sheridan, V. Bondarenko, and J. B. Casady, Saturation Current Improvement in 1200 V Normally-Off SiC VJFETs using Non-Uniform Channel Doping, Proceedings of The 22nd International Symposium on Power Semiconductor Devices & ICs, pp.361-364, 2011.

D. Sheridan, A. Ritenour, V. Bondarenko, P. Burks, and J. Casady, Record 2.8m?.cm2 1.9kV Enhancement-Mode SiC VJFETs, Power Semiconductor Devices & IC's 21st International Symposium on, pp.335-338, 2009.

Y. Z. Li, P. Alexandrov, J. H. Zhang, L. X. Li, and J. H. Zhao, 10kV, 87m?.cm2 Normally-off 4H-SiC Vertical Junction Field-Effect Transistors, Materials Science Forum, pp.527-529, 2006.

H. Fujiwara, T. Kimoto, T. Tojo, and H. Matsunami, Characterization of in-grown stacking faults in 4H???SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes, Applied Physics Letters, vol.87, issue.5, p.51912, 2005.
DOI : 10.1063/1.1997277

R. L. Myers-ward, B. L. Vanmil, R. E. Stahlbush, S. Katz, J. Mccrate et al., Turning of Basal Plane Dislocations during Epitaxial Growth on 4?? Off-Axis 4H-SiC, Materials Science Forum, vol.615, issue.617, pp.615-617
DOI : 10.4028/www.scientific.net/MSF.615-617.105

R. E. Stahlbush, R. L. Myers-ward, B. L. Vanmil, D. K. Gaskill, and C. R. Jr, A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy, Materials Science Forum, vol.645, issue.648, pp.645-648, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.271

S. Ha, M. Skowronski, and H. Lendenmann, Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes, Journal of Applied Physics, vol.96, issue.1, p.393, 2004.
DOI : 10.1063/1.1756218

A. P. Sudarshan, Inverted Pyramid Defects in 4H-SiC Epilayers, Material Science Forum, pp.615-617, 2009.

B. J. Baliga, High-voltage device termination techniques a comparative review, IEE Proceedings I Solid State and Electron Devices, vol.129, issue.5, 1982.
DOI : 10.1049/ip-i-1.1982.0037

M. Vellvehi, Design and optimization of suitable edge terminations for 6.5kv igbts, " microelectron, J, vol.33, pp.765-769, 2002.

J. N. Merre, Graded junction termination extensions for electronic devices, U.S. Patent, vol.11, pp.201-066, 2007.

M. Lazar, D. Planson, K. Isoird, M. Locatelli, C. Raynaud et al., 4H-SiC bipolar power diodes realized by ion implantation, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547), pp.349-352, 2001.
DOI : 10.1109/SMICND.2001.967481

V. A. Temple, Junction termination extension for near-ideal breakdown voltage in p-n junctions, IEEE Transactions on Electron Devices, vol.33, issue.10, 1986.
DOI : 10.1109/T-ED.1986.22713

Y. Tanaka, Development of 6 kv-class sic-pin diodes for high-voltage power inverter, proceedings of the 22nd International Symposium on Power Semiconductor Devices and ICs, 2010.

K. Kinoshita, T. Hatakeyama, O. Takikawa, A. Yahata, and T. Shinohe, Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics, pp.253-256, 2002.
DOI : 10.1109/ISPSD.2002.1016219

K. Kinoshita, T. Hatakeyama, and T. Shinohe, High Withstand Voltage Semiconductor Device, p.17, 2003.

E. Maset, E. Sanchis-kilders, J. B. Ejea, A. Ferreres, J. Jordan et al., Accelerated Life Test for SiC Schottky Blocking Diodes in High-Temperature Environment, IEEE Transactions on Device and Materials Reliability, vol.9, issue.4, pp.557-562, 2009.
DOI : 10.1109/TDMR.2009.2029090

P. Godignon, X. Jorda, M. Vellvehi, X. Perpina, V. Banu et al., SiC Schottky Diodes for Harsh Environment Space Applications, IEEE Transactions on Industrial Electronics, vol.58, issue.7, pp.2582-2590, 2011.
DOI : 10.1109/TIE.2010.2080252
URL : https://hal.archives-ouvertes.fr/hal-00747617

J. Hilsenbeck, M. Treu, R. Rupp, K. Rüschenschmidt, R. Kern et al., Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations, Materials Science Forum, vol.645, issue.648, pp.673-676, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.673

A. Constant, N. Camara, J. Montserrat, E. Pausas, J. Camassel et al., Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication, Materials Science Forum, vol.679, issue.680, pp.679-680, 2011.
DOI : 10.4028/www.scientific.net/MSF.679-680.500

P. Godignon, E. Morvan, X. Jordá, M. Vellvehi, D. Flores et al., SiC power DIMOS with double implanted Al/B P-well, Microelectronics Journal, vol.32, issue.5-6, pp.5-6, 2001.
DOI : 10.1016/S0026-2692(01)00022-2

Q. Zhang, C. Jonas, S. Ryu, A. Agarwal, and J. Palmour, Design and Fabrications of High Voltage IGBTs on 4H-SiC, 2006 IEEE International Symposium on Power Semiconductor Devices & IC's, pp.1-4, 2006.