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Transport properties and low-frequency noise in low-dimensional structures

Abstract : Electrical and physical properties of low-dimensional structures have been studied for the various applications such as electronics, sensors, and etc. Low-frequency noise measurement is also a useful technique to give more information for the carrier dynamics correlated to the oxide traps, channel defects, and scattering. In this thesis, the electrical transport and low-frequency noise of low-dimensional structure devices such as multi-gate structures (e.g. FinFETs and Junctionless FETs), 3-D stacked Si/SiGe nanowire FETs, carbon nanotubes, and graphene are presented. From the view point of top-down and bottom-up approaches, the impacts of LF noise are investigated according to the dimensionality, conduction mechanism (surface or volume conduction), strain technique, and metal-semiconductor junctions.
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Submitted on : Wednesday, December 19, 2012 - 4:27:13 PM
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  • HAL Id : tel-00767284, version 1

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Do Young Jang. Transport properties and low-frequency noise in low-dimensional structures. Autre. Université de Grenoble; 239 - Korea University, 2011. Français. ⟨NNT : 2011GRENT096⟩. ⟨tel-00767284⟩

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