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Étude des fluctuations locales des transistors MOS destinés aux applications analogiques

Abstract : Electrical fluctuations of devices limit chip miniaturization. Despite manufacturing processes in continuous evolution, circuit performances are limited by electrical characteristics variations due to mismatch between two devices. Concerning low power applications, local fluctuations can become very critical. In the context of development of a 90nm CMOS technology with Embedded Flash memory for low power applications, MOS transistors matching is studied. A study of NMOS transistors gate doping impact is conducted. Study focuses on voltage matching of differential pairs biased under threshold. It is demonstrated that this matching can be degraded due to " hump " effect, meaning presence of parasitic devices on active edge. A macro-model allowing designers to model this effect is presented. It is studied at device level, circuit level and for different temperatures. Finally, a degradation study of MOS transistors mismatch under Hot Carriers Injection stress is performed, validating a degradation model. Octagonal devices are proposed to suppress " hump " effect and give good results in terms of matching as well as reliability.
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Contributor : Joly Yohan Connect in order to contact the contributor
Submitted on : Saturday, December 15, 2012 - 9:44:25 PM
Last modification on : Friday, October 22, 2021 - 3:48:02 AM
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  • HAL Id : tel-00765664, version 1



Joly Yohan. Étude des fluctuations locales des transistors MOS destinés aux applications analogiques. Micro et nanotechnologies/Microélectronique. Université de Provence - Aix-Marseille I, 2011. Français. ⟨tel-00765664⟩



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