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Réalisation des couches minces PMN-PT dans la technologie MEMS pour les applications hyperfréquences

Abstract : The current information systems depend strongly on the microwave technology used for wireless communications. The enhanced performance of MEMS radio frequency capacity in X-band (8 GHz and 12 GHz) is an important issue not only for Telecom applications but also for Radar applications. The integration of ferroelectric materials with high-k t is highly demanded to replace the traditional dielectrics. This high-k property is accessible for compounds derived from the perovskite structure. Incorporating such materials in switches radio-frequency (RF-MEMS) impose however new chalenges in terms of the compatibility with the existing MEMS technologies. This thesis is focused on the compound PMN-PT with composition 65/35, which has a relative permittivity greater than 10,000 in the form of bulk material.This thesis has been devoted to the study of the integration of PMN-PT thin films in passive components such as MEMS switches. In the frequency range of interest, 500 MHz to 20 GHz, the properties of these materials have not been studied in bulk materials and even less in the form of thin films. The aim of this thesis was to fabricate the ferroelectric thin films and test their compatibility in the overall operation of a MEMS component. This study provides a reciprocal analysis FeMEMS (MEMS based on ferroelectrics) to complete knowledge of these materials in this frequency range. This work makes interest to both the industry and MEMS ferroelectric materials science who is trying to understand the physical mechanisms governing the dielectric properties in terms of losses in this particular range of frequencies.The characterizations of RF-MEMS presented in this thesis have demonstrated the compatibility of MEMS PMN-PT in the frequency range between 500MHz to 10 GHz with very good performance. Using this adaptation, the current technology is able to cover the most important frequency bands: the civil band telecommunication 1 GHz to 5 GHz using the PMN-PT, the X-band satellites between 5 GHz and 15 GHz with PZT and high frequency band of 15 GHz to 40 GHz for the defense with traditional dielectric (Si3N4).
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Kim Anh Bui Meura. Réalisation des couches minces PMN-PT dans la technologie MEMS pour les applications hyperfréquences. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2012. Français. ⟨NNT : 2012PA112232⟩. ⟨tel-00755519⟩

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