G. W. Hyung, J. Park, J. H. Kim, J. R. Koo, and Y. K. Kim, Storage stability improvement of pentacene thin-film transistors using polyimide passivation layer fabricated by vapor deposition [121] EFFECT TRANSISTORS MADE OF PI-CONJUGATED OLIGOMERS AND POLYMERIC INSULATORS, Synthetic Metals, vol.54, p.435, 1993.

]. F. Garnier, R. Hajlaoui, A. Yassar, P. Srivastava, A. Transistor et al., All-Polymer Field-Effect Transistor Realized by Printing Techniques, Science, vol.265, issue.5179, p.1684, 1994.
DOI : 10.1126/science.265.5179.1684

P. K. Ho, D. S. Thomas, R. H. Friend, and N. Tessler, All-Polymer Optoelectronic Devices, All-Polymer Optoelectronic Devices, p.233, 1999.
DOI : 10.1126/science.285.5425.233

]. H. Rost, J. Ficker, J. S. Alonso, L. Leenders, and I. Mcculloch, Air-stable all-polymer field-effect transistors with organic electrodes, Synthetic Metals, vol.145, issue.1, p.83, 2004.
DOI : 10.1016/j.synthmet.2004.04.008

H. G. Sandberg, T. G. Backlund, R. Osterbacka, and H. Stubb, High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator, Advanced Materials, vol.16, issue.13, p.1112, 2004.
DOI : 10.1002/adma.200400030

T. G. Backlund, H. G. Sandberg, R. Osterbacka, H. Stubb, T. Makela et al., Towards allpolymer field-effect transistors with solution processable materials, Synthetic Metals, vol.148, issue.54, p.439, 2005.

G. Horowitz, F. Deloffre, F. Garnier, R. Hajlaoui, M. Hmyene et al., Reel-to-reel manufacturing of integrated circuits based on soluble polymer semicondcutor Sirringhaus, Bias-stress induced contact and channel degradation in staggered and coplanar organic field-effect transistors, Watkins, L. Yan, Y. L. Gao, Electronic structure symmetry of interfaces between pentacene and metals, pp.23-26, 2002.

H. Ishii, K. Sugiyama, E. Ito, K. Seki-xu, T. Minari et al., Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Organic field-effect transistors Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism, Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility, 1999.

]. H. Sirringhaus, N. Tessler, and R. H. Friend, Integrated Optoelectronic Devices Based on Conjugated Polymers, Science, vol.280, issue.5370, p.1741, 1998.
DOI : 10.1126/science.280.5370.1741

]. D. Schroder, G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, Semiconductor material and device characterization Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors, Journal of Applied Physics, vol.87, issue.11, p.4456, 2000.

M. C. Vissenberg and M. Matters, Theory of the field-effect mobility in amorphous organic transistors, Physical Review B, vol.57, issue.20, p.12964, 1998.
DOI : 10.1103/PhysRevB.57.12964

]. V. Podzorov, E. Menard, J. A. Rogers, and M. E. Gershenson, Hall Effect in the Accumulation Layers on the Surface of Organic Semiconductors, Physical Review Letters, vol.95, issue.22, p.226601, 2005.
DOI : 10.1103/PhysRevLett.95.226601

G. Horowitz, Organic thin film transistors: From theory to real devices, Journal of Materials Research, vol.82, issue.07, p.1946, 2004.
DOI : 10.1063/1.1560869

]. G. Horowitz and M. E. Hajlaoui, Grain size dependent mobility in polycrystalline organic field-effect transistors, Synthetic Metals, vol.122, issue.1, p.185, 2001.
DOI : 10.1016/S0379-6779(00)01351-5

]. T. Minari, T. Nemoto, S. Isoda, D. J. Gundlach, and T. N. Jackson, Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor, Journal of Applied Physics, vol.99, issue.3, pp.34506-1854, 1998.
DOI : 10.1063/1.2169872

T. Minari, T. Nemoto, and S. Isoda, Fabrication and characterization of single-grain organic field-effect transistor of pentacene, Journal of Applied Physics, vol.96, issue.1, p.769, 2004.
DOI : 10.1063/1.1760237

M. E. Gershenson, V. Podzorov, and A. F. Morpurgo, : Electronic transport in single-crystal organic transistors, Reviews of Modern Physics, vol.78, issue.3, p.973, 2006.
DOI : 10.1103/RevModPhys.78.973

K. Ryu, I. Kymissis, V. Bulovic, and C. Sodini, Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements, IEEE Electron Device Letters, vol.26, issue.10, p.716, 2005.
DOI : 10.1109/LED.2005.854394

]. T. Sekitani, Y. Takamatsu, S. Nakano, T. Sakurai, and T. Someya, Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films Temperature dependence of Hall effects in organic thin-film transistors on plastic films, Applied Physics Letters Applied Physics Letters, vol.88, issue.90, p.133516, 2006.

J. Takeya, J. Kato, K. Hara, M. Yamagishi, R. Hirahara et al., In-crystal and surface charge transport of electricfield-induced carriers in organic single-crystal semiconductors An Analytical Model for Organic-Based Thin-Film Transistors, 25] S. M. Sze, Physics of Semiconductor Devices, p.469, 1981.

]. D. Braga and G. Horowitz, Subthreshold regime in rubrene single-crystal organic transistors, Applied Physics A, vol.139, issue.1, p.193, 2009.
DOI : 10.1007/s00339-008-5008-y

R. T. Tung, Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces, Physical Review Letters, vol.84, issue.26, p.6078, 2000.
DOI : 10.1103/PhysRevLett.84.6078

]. L. Burgi, T. J. Richards, R. H. Friend, and H. Sirringhaus, Close look at charge carrier injection in polymer field-effect transistors, Journal of Applied Physics, vol.94, issue.9, p.6129, 2003.
DOI : 10.1063/1.1613369

B. H. Hamadani, C. A. Richter, J. S. Suehle, and D. J. Gundlach, Insights into the characterization of polymer-based organic thin-film transistors using capacitance-voltage analysis, Applied Physics Letters, vol.92, issue.20, 2008.
DOI : 10.1063/1.2917523

]. T. Li, P. Ruden, I. Campbell, and D. Smith, Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy, Journal of Applied Physics Applied Physics Letters, vol.93, issue.83, p.5539, 2003.

]. Y. Roichman and N. Tessler, Structures of polymer field-effect transistor: Experimental and numerical analyses, Applied Physics Letters, vol.80, issue.1, p.151, 2002.
DOI : 10.1063/1.1431691

P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature, Journal of Applied Physics, vol.96, issue.12, p.7312, 2004.
DOI : 10.1063/1.1806533

R. A. Street and A. Salleo, Contact effects in polymer transistors, Applied Physics Letters, vol.81, issue.15, pp.2887-196, 2002.
DOI : 10.1063/1.1512950

T. J. Richards and H. Sirringhaus, Analysis of the contact resistance in staggered, top-gate organic field-effect transistors, Journal of Applied Physics, vol.102, issue.9, p.94510, 2007.
DOI : 10.1063/1.2804288

I. G. Hill, Numerical simulations of contact resistance in organic thin-film transistors, Applied Physics Letters, vol.87, issue.16, p.163505, 2005.
DOI : 10.1063/1.2112189

]. V. Vinciguerra, M. L. Rosa, D. Nicolosi, G. Sicurella, and L. Occhipinti, Modeling the gate bias dependence of contact resistance in staggered polycrystalline organic thin film transistors, Organic Electronics, vol.10, issue.6, p.1074, 2009.
DOI : 10.1016/j.orgel.2009.05.019

G. J. Hu, C. Chang, Y. T. Chia, G. Effective, . Length et al., Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET's, IEEE Transactions on Electron Devices, vol.34, issue.12, p.2469, 1987.
DOI : 10.1109/T-ED.1987.23337

A. R. Brown, D. M. Deleeuw, E. E. Havinga, A. Pomp, A. Universal et al., A universal relation between conductivity and field-effect mobility in doped amorphous organic semiconductors, Synthetic Metals, vol.68, issue.1, p.65, 1994.
DOI : 10.1016/0379-6779(94)90148-1

H. E. Katz, Organic molecular solids as thin film transistor semiconductors, Journal of Materials Chemistry, vol.7, issue.3, p.369, 1997.
DOI : 10.1039/a605274f

]. N. Kawasaki, Y. Ohta, Y. Kubozono, A. Konishi, and A. Fujiwara, An investigation of correlation between transport characteristics and trap states in n-channel organic field-effect transistors, Applied Physics Letters, vol.92, issue.16, p.163307, 2008.
DOI : 10.1063/1.2908886

V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, Single-crystal organic field effect transistors with the hole mobility ???8 cm2/V???s, Applied Physics Letters, vol.83, issue.17, p.3504, 2003.
DOI : 10.1063/1.1622799

]. D. Knipp, R. A. Street, A. Volkel, and J. Ho, Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport, Journal of Applied Physics, vol.93, issue.1, p.347, 2003.
DOI : 10.1063/1.1525068

T. Lindner, G. Paasch, and S. Scheinert, Hysteresis in organic field-effect devices: Simulated effects due to trap recharging, Journal of Applied Physics, vol.98, issue.11, 2005.
DOI : 10.1063/1.2138377

G. Paasch, S. Scheinert, A. Herasimovich, I. Horselmann, and T. Lindner, Characteristics and mechanisms of hysteresis in polymer field-effect transistors, physica status solidi (a), vol.104, issue.3, p.534, 2008.
DOI : 10.1002/pssa.200723400

]. G. Gu and M. G. Kane, Moisture induced electron traps and hysteresis in pentacene-based organic thinfilm transistors, Applied Physics Letters, vol.92, 2008.

]. C. Ucurum, H. Goebel, F. A. Yildirim, W. Bauhofer, and W. Krautschneider, Hole trap related hysteresis in pentacene field-effect transistors, Journal of Applied Physics, vol.104, issue.8, 2008.
DOI : 10.1063/1.2999643

A. R. Brown, C. P. Jarrett, D. M. Deleeuw, and M. , Field-effect transistors made from solution-processed organic semiconductors, Synthetic Metals, vol.88, issue.1, p.37, 1997.
DOI : 10.1016/S0379-6779(97)80881-8

H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik et al., High-mobility polymer gate dielectric pentacene thin film transistors, Journal of Applied Physics, vol.92, issue.9, p.5259, 2002.
DOI : 10.1063/1.1511826

H. Sirringhaus, C. W. Sele, T. Vonwerne, R. H. Friend, and H. Sirringhaus, Reliability of Organic Field-Effect Transistors Lithography-Free, Self-Aligned Inkjet Printing with Sub-Hundred-Nanometer Resolution, Advanced Materials Advanced Materials, vol.21, issue.17, p.997, 2005.

A. Feng, V. R. Dodabalapur, A. J. Raju, and . Lovinger, High-Performance Plastic Transistors Fabricated by Printing Techniques, Chemistry of materials, vol.9, p.1299, 1997.

E. J. Brandon, W. West, and E. Wesseling, Carbon-based printed contacts for organic thin-film transistors, Applied Physics Letters, vol.83, issue.19, p.3945, 2003.
DOI : 10.1063/1.1625794

J. A. Rogers, Z. Bao, A. Makhija, and P. Braun, Printing Process Suitable for Reel-to-Reel Production of High-Performance Organic Transistors and Circuits, Advanced Materials, vol.11, issue.9, p.741, 1999.
DOI : 10.1002/(SICI)1521-4095(199906)11:9<741::AID-ADMA741>3.0.CO;2-L

. Molenkamp, Organic thin-film transistors fabricated by microcontact printing, Applied Physics Letters, vol.84, p.1582, 2004.

J. A. Rogers, K. E. Paul, R. J. Jackman, G. M. Whitesides, H. Sirringhaus et al., Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field, Applied Physics Letters, vol.70, issue.20, pp.2658-2123, 1997.
DOI : 10.1063/1.118988

]. D. Huang, F. Liao, S. Molesa, D. Redinger, and V. Subramanian, Plastic-Compatible Low Resistance Printable Gold Nanoparticle Conductors for Flexible Electronics, Journal of The Electrochemical Society, vol.150, issue.7, p.412, 2003.
DOI : 10.1149/1.1582466

K. E. Paul, W. S. Wong, S. E. Ready, and R. A. Street, Additive jet printing of polymer thin-film transistors, Applied Physics Letters, vol.83, issue.10, p.2070, 2003.
DOI : 10.1063/1.1609233

M. L. Chabinyc, W. S. Wong, A. Salleo, K. E. Paul, and R. A. Street, Organic polymeric thin-film transistors fabricated by selective dewetting, Applied Physics Letters, vol.81, issue.22, p.4260, 2002.
DOI : 10.1063/1.1524301

]. T. Kawase, H. Sirringhaus, R. H. Friend, and T. Shimoda, Inkjet Printed Via-Hole Interconnections and Resistors for All-Polymer Transistor Circuits, Advanced Materials, vol.13, issue.21, p.1601, 2001.
DOI : 10.1002/1521-4095(200111)13:21<1601::AID-ADMA1601>3.0.CO;2-X

Y. Xu, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari et al., A transport study of carrier mobility in organic field-effect transistors, Journal of Applied Physics, 2011.

]. L. Burgi, T. J. Richards, R. H. Friend, H. S. Horowitz, M. E. Hajlaoui et al., Close look at charge carrier injection in polymer field-effect transistors, CHAPTER 3 Electrical characterizations 3.1 Classic methods References, pp.6129-4456, 2000.
DOI : 10.1063/1.1613369

J. H. Worne, J. E. Anthony, and D. Natelson, Transport in organic semiconductors in large electric fields: From thermal activation to field emission, Applied Physics Letters, vol.96, issue.5, pp.53308-736, 2010.
DOI : 10.1063/1.3309704

K. Ryu, I. Kymissis, V. Bulovic, and C. Sodini, Direct extraction of mobility in pentacene OFETs using C" V and I"V measurements [6] G. Ghibaudo, New Method for the Extraction of Mosfet Parameters, Analytical Modeling of the Mos-Transistor, Physica Status Solidi a-Applied Research, p.223, 1988.

A. Wang, I. Kymissis, V. Bulovic, A. I. Akinwande, C. G. Sodini et al., Tunable threshold voltage and flatband voltage in pentacene field effect transistors, Applied Physics Letters, vol.89, issue.11, p.833, 1982.
DOI : 10.1063/1.2349299

M. D. Jacunski, M. S. Shur, and M. Hack, Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs, IEEE Transactions on Electron Devices, vol.43, issue.9, p.1433, 1996.
DOI : 10.1109/16.535329

]. Y. Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra et al., Modified transmission-line method for contact resistance extraction in organic field-effect transistors, Applied Physics Letters, vol.97, issue.6, p.63302, 2010.
DOI : 10.1063/1.3479476
URL : https://hal.archives-ouvertes.fr/hal-00596184

]. J. Zaumseil, K. W. Baldwin, J. A. Rogers, P. V. Necliudov, M. S. Shur et al., Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination, Contact resistance extraction in pentacene thin film transistors, pp.6117-259, 2003.
DOI : 10.1063/1.1568157

]. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. S. Zhou et al., Contact resistance in organic thin film transistors, Solid-State Electronics An experimental study of contact effects in organic thin film transistors Charge injection process in organic fieldeffect transistors, Journal of Applied Physics Applied Physics Letters, vol.47, issue.91, pp.24509-053508, 2003.

G. Horowitz, Organic thin film transistors: From theory to real devices, Journal of Materials Research, vol.82, issue.07, p.1946, 2004.
DOI : 10.1063/1.1560869

S. W. Luan, G. W. Neudeck, A. Experimental-study, . Of, . Source et al., An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors, Journal of Applied Physics, vol.72, issue.2, p.766, 1992.
DOI : 10.1063/1.351809

P. Barbut, G. Frere, R. Sicard, I. Gwoziecki, R. Chartier et al., Step toward robust and reliable amorphous polymer field-effect transistors and logic functions made by the use of roll to roll compatible printing processes, p.456, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00569811

C. Reese and Z. Bao, Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors, Advanced Functional Materials, vol.182, issue.5, p.763, 2009.
DOI : 10.1002/adfm.200801019

]. W. Kalb, P. Lang, M. Mottaghi, H. Aubin, G. Horowitz et al., Structure???performance relationship in pentacene/Al2O3 thin-film transistors, Synthetic Metals, vol.146, issue.3, p.279, 2004.
DOI : 10.1016/j.synthmet.2004.08.018

G. B. Blanchet, C. R. Fincher, M. Lefenfeld, and J. A. Rogers, Contact resistance in organic thin film transistors, Applied Physics Letters, vol.84, issue.2, p.296, 2004.
DOI : 10.1063/1.1639937

K. P. Puntambekar, P. V. Pesavento, and C. D. Frisbie, Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy, Applied Physics Letters, vol.83, issue.26, p.5539, 2003.
DOI : 10.1063/1.1637443

I. G. Hill, Numerical simulations of contact resistance in organic thin-film transistors, Applied Physics Letters, vol.87, issue.16, p.163505, 2005.
DOI : 10.1063/1.2112189

]. Y. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek, and G. Ghibaudo, Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors, Journal of Applied Physics, vol.107, issue.11, p.114507, 2010.
DOI : 10.1063/1.3432716

]. Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard et al., Power transferlength method for full biasing contact resistance evaluation of organic field-effect transistors, p.2019, 2011.

]. L. Bürgi, H. Sirringhaus, and R. Friend, Noncontact potentiometry of polymer field-effect transistors, Applied Physics Letters, vol.80, issue.16, p.2913, 2002.
DOI : 10.1063/1.1470702

]. T. Li, P. Ruden, I. Campbell, and D. Smith, Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling, homogeneous and inhomogeneous media, Iee Proceedings-Circuits Devices and Systems, 2002.
DOI : 10.1063/1.1558998

I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method, Applied Physics Letters, vol.84, issue.5, p.813, 2004.
DOI : 10.1063/1.1645316

R. A. Street, D. Knipp, and A. R. Volkel, Hole transport in polycrystalline pentacene transistors, Applied Physics Letters, vol.80, issue.9, p.1658, 2002.
DOI : 10.1063/1.1456549

]. D. Braga and G. Horowitz, Subthreshold regime in rubrene single-crystal organic transistors, Applied Physics A, vol.139, issue.1, p.193, 2009.
DOI : 10.1007/s00339-008-5008-y

]. S. Scheinert and W. Schliefke, Analyzes of field effect devices based on poly(3-octylthiophene), Synthetic Metals, vol.139, issue.2, p.501, 2003.
DOI : 10.1016/S0379-6779(03)00205-4

I. Torres, D. M. Taylor, E. Itoh, H. Sirringhaus, N. Tessler et al., Interface states and depletion-induced threshold voltage instabilityin organic metal-insulator-semiconductor structures, Applied Physics Letters, vol.85, issue.2, pp.314-1741, 1998.
DOI : 10.1063/1.1769081

]. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, High-performance bottom electrode organic thin-film transistors, IEEE Transactions on Electron Devices, vol.48, issue.6, p.1060, 2001.
DOI : 10.1109/16.925226

C. D. Dimitrakopoulos and D. J. Mascaro, Organic thin-film transistors: A review of recent advances, IBM Journal of Research and Development, vol.45, issue.1, p.11, 2001.
DOI : 10.1147/rd.451.0011

R. A. Street and A. Salleo, Contact effects in polymer transistors, Applied Physics Letters, vol.81, issue.15, pp.2887-369, 1997.
DOI : 10.1063/1.1512950

S. D. Wang, T. Minari, T. Miyadera, Y. Aoyagi, and K. Tsukagoshi, Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift, Applied Physics Letters, vol.92, issue.6, p.63305, 2008.
DOI : 10.1063/1.2844857

]. G. Horowitz, R. Hajlaoui, D. Fichou, and A. Kassmi, Gate voltage dependent mobility of oligothiophene field-effect transistors, Journal of Applied Physics, vol.85, issue.6, p.3202, 1999.
DOI : 10.1063/1.369661

]. Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra et al., Origion of low-frequency noise in pentacene field-effect transistors, Solid State Electronics, vol.61, issue.106, 2011.

J. A. Letizia, J. Rivnay, A. Facchetti, M. A. Ratner, and T. J. Marks, Variable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors, Advanced Functional Materials, vol.130, issue.1, p.50, 2010.
DOI : 10.1002/adfm.200900831

!. Ofets, T. Xu, K. Minari, R. Tsukagoshi, R. Gwoziecki et al., Modeling of static electrical properties in organic field-effect transistors, Journal of Applied Physics, vol.110, p.14510, 2011.

R. A. Street, D. Knipp, A. R. Volkel, G. Horowitz, and P. Delannoy, Hole transport in polycrystalline pentacene transistors Charge carrier transport in organic semiconductors An Analytical Model for Organic-Based Thin-Film Transistors, Applied Physics Letters Synthetic Metals Journal of Applied Physics, vol.80, issue.70, pp.1658-469, 1991.

P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Modeling of organic thin film transistors of different designs, Journal of Applied Physics, vol.88, issue.11, p.6594, 2000.
DOI : 10.1063/1.1323534

E. Calvetti, L. Colalongo, and Z. M. Kovacs-vajna, Organic thin film transistors: a DC/dynamic analytical model, Solid-State Electronics, vol.49, issue.4, p.567, 2005.
DOI : 10.1016/j.sse.2005.01.006

P. Stallinga and H. L. Gomes, Modeling electrical characteristics of thin-film field-effect transistors, Synthetic Metals, vol.156, issue.21-24, p.1305, 2006.
DOI : 10.1016/j.synthmet.2006.09.015

P. Stallinga, H. L. Gomes, D. Gupta, N. Jeon, and S. Yoo, Modeling electrical characteristics of thin-film field-effect transistors, Synthetic Metals, vol.156, issue.21-24, pp.1316-1026, 2006.
DOI : 10.1016/j.synthmet.2006.09.008

]. L. Li, M. Debucquoy, J. Genoe, and P. Heremans, A compact model for polycrystalline pentacene thin-film transistor, Journal of Applied Physics, vol.107, issue.2, p.24519, 2010.
DOI : 10.1063/1.3294617

]. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, and M. Hajlaoui, The Concept of ???Threshold Voltage??? in Organic Field-Effect Transistors, Advanced Materials, vol.10, issue.12, p.923, 1998.
DOI : 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W

]. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors, Journal of Applied Physics, vol.87, issue.9, p.4456, 2000.
DOI : 10.1063/1.373091

]. D. Natali, L. Fumagalli, and M. Sampietro, Modeling of organic thin film transistors: Effect of contact resistances, Journal of Applied Physics, vol.101, issue.1, p.14501, 2007.
DOI : 10.1063/1.2402349

]. O. Marinov, M. Deen, and B. Iniguez, Charge transport in organic and polymer thin-film transistors: recent issues, IEE Proceedings-Circuits, Devices and Systems, p.189, 2005.
DOI : 10.1049/ip-cds:20045076

C. D. Dimitrakopoulos and D. J. Mascaro, Organic thin-film transistors: A review of recent advances, IBM Journal of Research and Development, vol.45, issue.1, p.11, 2001.
DOI : 10.1147/rd.451.0011

H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic/Organic Interfaces, Advanced Materials, vol.11, issue.8, p.605, 1999.
DOI : 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q

]. N. Tessler and Y. Roichman, Two-dimensional simulation of polymer field-effect transistor, Applied Physics Letters, vol.79, issue.18, p.2987, 2001.
DOI : 10.1063/1.1415374

S. J. Konezny, M. N. Bussac, and L. Zuppiroli, Trap-limited transport in rubrene transistors, Applied Physics Letters, vol.95, issue.26, p.263311, 2009.
DOI : 10.1063/1.3276693

]. C. Erlen and P. Lugli, Analytical Model of Trapping Effects in Organic Thin-Film Transistors, IEEE Transactions on Electron Devices, vol.56, issue.4, p.546, 2009.
DOI : 10.1109/TED.2008.2011936

]. S. Scheinert, K. P. Pernstich, B. Batlogg, and G. Paasch, Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide, Journal of Applied Physics, vol.102, issue.10, p.104503, 2007.
DOI : 10.1063/1.2803742

M. Fiebig, D. Beckmeier, and B. Nickel, studies of trap states in pentacene thin film transistors, Applied Physics Letters, vol.96, issue.8, p.83304, 2010.
DOI : 10.1063/1.3309685

]. D. Braga and G. Horowitz, Subthreshold regime in rubrene single-crystal organic transistors, Applied Physics A, vol.139, issue.1, p.193, 2009.
DOI : 10.1007/s00339-008-5008-y

]. S. Scheinert, G. Paasch, M. Schrodner, H. K. Roth, S. Sensfuss et al., Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator, Journal of Applied Physics, vol.92, issue.1, p.330, 2002.
DOI : 10.1063/1.1486253

S. C. Lo, Y. M. Li, and S. M. Yu, Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors, Mathematical and Computer Modelling, vol.46, issue.1-2, p.180, 2007.
DOI : 10.1016/j.mcm.2006.12.018

F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini et al., Spatially Correlated Charge Transport in Organic Thin Film Transistors, Physical Review Letters, vol.92, issue.11, p.116802, 2004.
DOI : 10.1103/PhysRevLett.92.116802

G. Horowitz, Organic thin film transistors: From theory to real devices, Journal of Materials Research, vol.82, issue.07, p.1946, 2004.
DOI : 10.1063/1.1560869

]. D. Boudinet, M. Benwadih, S. Altazin, R. Gwoziecki, J. M. Verilhac et al., Influence of the semi-conductor layer thickness on electrical performance of staggered n- and p-channel organic thin-film transistors, Jacunski, M. S. Shur, M. Hack, Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFT's, Ieee Transactions on Electron Devices, p.1433, 1996.
DOI : 10.1016/j.orgel.2009.11.008

]. S. Scheinert and W. Schliefke, Analyzes of field effect devices based on poly(3-octylthiophene), Synthetic Metals, vol.139, issue.2, p.501, 2003.
DOI : 10.1016/S0379-6779(03)00205-4

C. G. Sodini, T. W. Ekstedt, J. L. Moll, C. Accumulation, . Mobility et al., Charge accumulation and mobility in thin dielectric MOS transistors, Solid-State Electronics, vol.25, issue.9, p.833, 1982.
DOI : 10.1016/0038-1101(82)90170-8

W. L. Kalb, S. Haas, C. Krellner, T. Mathis, and B. Batlogg, Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals, Physical Review B, vol.81, issue.15, p.155315, 2010.
DOI : 10.1103/PhysRevB.81.155315

A. R. Volkel, R. A. Street, and D. Knipp, Carrier transport and density of state distributions in pentacene transistors, Physical Review B, vol.66, issue.19, p.195336, 2002.
DOI : 10.1103/PhysRevB.66.195336

Y. Xu, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari et al., A transport study of carrier mobility in organic field-effect transistors, Journal of Applied Physics, 2011.

]. S. Fratini and S. Ciuchi, Bandlike Motion and Mobility Saturation in Organic Molecular Semiconductors, Physical Review Letters, vol.103, issue.26, p.266601, 2009.
DOI : 10.1103/PhysRevLett.103.266601
URL : https://hal.archives-ouvertes.fr/hal-00704610

M. C. Vissenberg and M. Matters, Theory of the field-effect mobility in amorphous organic transistors, Physical Review B, vol.57, issue.20, p.12964, 1998.
DOI : 10.1103/PhysRevB.57.12964

]. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers et al., Intrinsic Charge Transport on the Surface of Organic Semiconductors, Physical Review Letters, vol.93, issue.8, 2004.
DOI : 10.1103/PhysRevLett.93.086602

N. G. Martinelli, M. Savini, L. Muccioli, Y. Olivier, F. Castet et al., Modeling Polymer Dielectric/Pentacene Interfaces: On the Role of Electrostatic Energy Disorder on Charge Carrier Mobility, Modeling Polymer Dielectric/Pentacene Interfaces: On the Role of Electrostatic Energy Disorder on Charge Carrier Mobility, p.3254, 2009.
DOI : 10.1002/adfm.200901077

]. Y. Xia, J. H. Cho, J. Lee, P. P. Ruden, and C. D. Frisbie, Comparison of the Mobility-Carrier Density Relation in Polymer and Single-Crystal Organic Transistors Employing Vacuum and Liquid Gate Dielectrics, Advanced Materials, vol.187, issue.21, p.2174, 2009.
DOI : 10.1002/adma.200803437

]. T. Li, P. Ruden, I. Campbell, and D. Smith, Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling Analysis of the contact resistance in staggered, top-gate organic fieldeffect transistors, Journal of Applied Physics Journal of Applied Physics, vol.93, issue.102, p.94510, 2003.

R. Xu, R. Gwoziecki, M. Coppard, T. Benwadih, K. Minari et al., Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors, Applied Physics Letters, vol.98, issue.3, p.33505, 2011.
DOI : 10.1063/1.3544583
URL : https://hal.archives-ouvertes.fr/hal-00596188

M. Yamagishi, J. Soeda, T. Uemura, Y. Okada, Y. Takatsuki et al., Free-electron-like Hall effect in high-mobility organic thin-film transistors, Physical Review B, vol.81, issue.16, p.161306, 2010.
DOI : 10.1103/PhysRevB.81.161306

J. Takeya, J. Kato, K. Hara, M. Yamagishi, R. Hirahara et al., In-crystal and surface charge transport of electricfield-induced carriers in organic single-crystal semiconductors Sirringhaus, Band-like temperature dependence of mobility in a solution-processed organic semiconductor, Physical Review Letters Nature Materials, vol.98, issue.9, p.736, 2007.

C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya et al., Solution-Processable Organic Single Crystals with Bandlike Transport in Field-Effect Transistors, Advanced Materials, vol.3, issue.4, p.523, 2011.
DOI : 10.1002/adma.201002682

S. F. Nelson, Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Temperature-independent transport in high-mobility pentacene transistors, Applied Physics Letters, vol.72, issue.15, p.1854, 1998.
DOI : 10.1063/1.121205

]. Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra et al., Origion of low-frequency noise in pentacene field-effect transistors, Solid State Electronics, vol.61, issue.106, 2011.

]. T. Minari, T. Nemoto, S. Isoda, J. D. Yuen, R. Menon et al., Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor, Nonlinear transport in semiconducting polymers at high carrier densities, pp.34506-572, 2006.
DOI : 10.1063/1.2169872

]. T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi, and H. Ito, Charge injection process in organic field-effect transistors, Applied Physics Letters, vol.91, issue.5, p.53508, 2007.
DOI : 10.1063/1.2759987

I. M. Hafez, G. Ghibaudo, F. Balestra, M. Haond, I. Of et al., Impact of LDD structures on the operation of silicon MOSFETs at low temperature, Solid-State Electronics, vol.38, issue.2, p.419, 1995.
DOI : 10.1016/0038-1101(94)E0055-J

C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators, Science, vol.283, issue.5403, p.822, 1999.
DOI : 10.1126/science.283.5403.822

N. F. Mott, E. Of, . Interaction, . Variable-range, and . Hopping, The effect of electron interaction on variable-range hopping, Philosophical Magazine, vol.1, issue.4, p.643, 1976.
DOI : 10.1080/14786437608223801

L. Li, K. Chung, and J. Jang, Field effect mobility model in organic thin film transistor, Applied Physics Letters, vol.98, issue.2, p.23305, 2011.
DOI : 10.1063/1.3543900

]. Y. Xu, F. Balestra, and G. Ghibaudo, Theoretical analysis of carrier mobility in organic field-effect transistors, Applied Physics Letters, vol.98, issue.23, p.233302, 2011.
DOI : 10.1063/1.3599485

Y. Roichman, Y. Preezant, and N. Tessler, Analysis and modeling of organic devices, physica status solidi (a), vol.201, issue.6, p.1246, 2004.
DOI : 10.1002/pssa.200404342

]. Y. Roichman and N. Tessler, Generalized Einstein relation for disordered semiconductors???implications for device performance, Applied Physics Letters, vol.80, issue.11, p.1948, 2002.
DOI : 10.1063/1.1461419
URL : http://arxiv.org/abs/cond-mat/0109432

D. Knipp, R. A. Street, and A. R. Volkel, Morphology and electronic transport of polycrystalline pentacene thin-film transistors, Applied Physics Letters, vol.82, issue.22, p.3907, 2003.
DOI : 10.1063/1.1578536

]. G. Ghibaudo, Critical MOSFETs operation for low voltage low power IC's: Ideal characteristics, parameter extraction, Electronic noise in microelectronic devices, 1997.
DOI : 10.1016/s0167-9317(97)00166-4

J. A. Chroboczek, Automatic, wafer-level, low frequency noise measurements for the interface slow trap de Microelectronic Test Structures, p.95, 2003.

Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra et al., Origion of low-frequency noise in pentacene field-effect transistors Organic thin-film transistors: A review of recent advances, Ibm Journal of Research and Development, vol.45, p.11, 2001.

M. E. Gershenson, V. Podzorov, A. F. Morpurgo, ]. L. Burgi, T. J. Richards et al., Colloquium: Electronic transport in single-crystal organic transistors Close look at charge carrier injection in polymer field-effect transistors An experimental study of contact effects in organic thin film transistors, pentacene organic thin film transistors, pp.61-5395, 2000.

]. S. Martin, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz et al., Flicker noise properties of organic thin-film transistors, Low-frequency noise in polymer transistors, Ieee Transactions on Electron Devices, p.1688, 2001.
DOI : 10.1063/1.372354

L. K. Vandamme, R. Feyaerts, G. Trefán, C. B. Conrad, W. G. Cullen et al., Detcheverry, 1/f noise in pentacene and polythienylene vinylene thin film transistors, Applied Physics Letters, vol.91, p.242110, 2007.
DOI : 10.1063/1.1423389
URL : http://repository.tue.nl/644701

A. Mcwhorter, 1/f noise and germanium surface properties, Semiconductor Surface Physics, 1957.

G. Ghibaudo, G. Ghibaudo, O. Roux, C. Nguyenduc, F. Balestra et al., On the theory of carrier number fluctuations in MOS devices, Solid-State Electronics, vol.32, issue.7, pp.563-571, 1991.
DOI : 10.1016/0038-1101(89)90113-5

O. Marinov, M. Deen, and B. Iniguez, Charge transport in organic and polymer thin-film transis recent issues, IEE Proceedings-Circuits, Devices and Systems, p.189, 2005.
DOI : 10.1049/ip-cds:20045076

T. Li, P. Ruden, I. Campbell, D. Smith, ]. S. Scheinert et al., Investigation of bottom-contact organic field effect transistors b [22 Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator, Jo Applied Physics, vol.92, p.330, 2002.

N. Kawasaki, Y. Ohta, Y. Kubozono, A. Konishi, and A. Fujiwara, An investigation of correlation between transport characteristics and tr Letters 92, p.163307, 2008.

G. Ghibaudo, T. B. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek et al., Electrical noise and RTS fluctuations in advanced CMOS devices, Microelectronics Reliability 4 Direct evaluation of low-field mobility and access resistance, p.114507, 2010.

T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi, H. J. Ito27-]-t et al., Charge injection process in organic fieldeffect transistors Analysis of the contact resistance in staggered, top-gate organic fieldeffect transistors, Modeling the gate bias dependence of contact resistance in staggered polycrystalline o electronics 10, pp.94510-1074, 2009.

Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard et al., Extraction of low-frequency noise in contact resistance of organic field-effect transistors, Applied Physics Letters, vol.97, issue.3, p.33503, 2010.
DOI : 10.1063/1.3467057
URL : https://hal.archives-ouvertes.fr/hal-00596185

J. Zaumseil, K. W. Baldwin, J. A. Rogers, H. Klauk, G. Schmid et al., Contact resistance in organic transistors that use source and drain electrodes formed by soft con Modified transmission-line method for contact resistance extraction in organic field-effect transistors, Contact resistance in organic thin film transistors, p.63302, 2003.

Y. Xu, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari et al., Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors, Applied Physics Letters, vol.98, issue.3, p.33505, 2011.
DOI : 10.1063/1.3544583
URL : https://hal.archives-ouvertes.fr/hal-00596188

D. Boudinet, M. Benwadih, S. Altazin, R. Gwoziecki, J. M. Verilhac et al., Influence of the semi-conductor layer staggered n-and p-channel organic thin-film transistors, p.291, 2010.

Y. Xu, G. Ghibaudo, F. Balestra, J. Chroboczek, R. Gwoziecki et al., of intrinsic carrier transport in organic semiconductors, which can be conducted by Hall-Effect measurements and other techniques. With regard to the low-frequency noise study, the first subject is to clarify the origins of noise sources in different type of devices, e.g., polymer (amorphous), polycrystalline and singlecrystal OFETs, or OFETs of different structures. A detailed modeling to reveal the formation of the observed 1/f noise by these origins can be subsequently carried out. LFN measurements (combining bias stress measurements) on single-crystal OFETs with various gate dielectrics are also interesting to investigate for the evolution of traps density, 2010.

Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek, and G. Ghibaudo, Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors, Journal of Applied Physics, vol.107, issue.11, pp.114507-114514, 2010.
DOI : 10.1063/1.3432716

Y. Xu, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra et al., Modified transmission-line method for contact resistance extraction in organic field-effect transistors, Applied Physics Letters, vol.97, issue.6, pp.63302-63305, 2010.
DOI : 10.1063/1.3479476
URL : https://hal.archives-ouvertes.fr/hal-00596184

Y. Xu, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari et al., Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors, Applied Physics Letters, vol.98, issue.3, pp.33505-33508, 2011.
DOI : 10.1063/1.3544583
URL : https://hal.archives-ouvertes.fr/hal-00596188

Y. Xu, F. Balestra, and G. Ghibaudo, Theoretical analysis of carrier mobility in organic field-effect transistors, Applied Physics Letters, vol.98, issue.23, pp.233302-233305, 2011.
DOI : 10.1063/1.3599485

Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra et al., Origin of low-frequency noise in pentacene field-effect transistors, Solid-State Electronics, vol.61, issue.1, pp.106-110, 2011.
DOI : 10.1016/j.sse.2011.01.002
URL : https://hal.archives-ouvertes.fr/hal-00596355

Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard et al., Modeling of static electrical properties in organic field-effect transistors, Journal of Applied Physics, vol.110, issue.1, pp.14510-14522, 2011.
DOI : 10.1063/1.3602997

Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard et al., Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors, Organic Electronics, vol.12, issue.12, pp.2019-2024, 2011.
DOI : 10.1016/j.orgel.2011.08.026

Y. Xu, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari et al., Carrier mobility in organic field-effect transistors, Journal of Applied Physics, vol.110, issue.10, pp.104513-104522, 2011.
DOI : 10.1063/1.3662955

Y. Xu, T. Minari, K. Tsukagoshi, K. Bock, M. Fadlalah et al., Chroboczek : !Study of Organic Material FETs by Combined Static and Noise Measurements, 2009.

Y. Xu, G. Ghibaudo, F. Balestra, J. A. Chroboczek, R. Gwoziecki et al., Static and low frequency noise characterization of P-type polymer and N-type small molecule organic field-effect transistors, 2010.

Y. Xu, F. Balestra, J. A. Chroboczek, G. Ghibaudo, T. Minari et al., Analysis of Low-Frequency Noise in Organic Field-Effect Transistors Combing Static and Noise Data, 2011.

Y. Xu, G. Ghibaudo, F. Balestra, M. Benwadih, R. Gwoziecki et al., !On the Temperature Dependence of Carrier Mobility in Organic Transistors, 2011.