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Nanofils de semiconducteurs à grande énergie de bande interdite pour des applications optoélectroniques

Abstract : Since the early 2000s, a large class of wide bandgap nanowires can be grown with an excellent control of doping and composition. The specific geometry of the nanowires leads to radial or axial heterostructures with better optical and transport properties compared to thin films. Due to these properties, they are promising candidates for a new generation of more efficient devices (LEDs, photodetectors, etc.). It is essential to understand the new effects induced by the particular geometry of these nanostructures.In the first part, I deal with the optical properties of wide bandgap semiconductor nanowires. First, I analyze the effect of the stress on the emission properties of core-shell GaN/AlGaN nanowires. I highlight the intersection of valence bands and its influence on the optical properties of nanowires. Then, I focus on the effect of quantum confinement and on the polarization properties of III-nitride heterostructured nanowires.In the second part, I describe the fabrication and characterization of III-nitride and ZnO nanowire-based devices. I first model and study photodetectors based on ensemble of nanowires. Then, I focus on the transport properties of single heterostructured nanowires of III-nitride heterostructures. I show in particular that these heterostructures exhibit a negative differential resistance. Finally, I present characterization of photodetectors and LEDs using single core-shell InGaN/GaN nanowires. An equivalent electrical circuit explains the observed behavior
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Submitted on : Saturday, October 27, 2012 - 1:01:08 AM
Last modification on : Wednesday, October 14, 2020 - 3:59:09 AM
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  • HAL Id : tel-00746091, version 1



Gwenolé Jacopin. Nanofils de semiconducteurs à grande énergie de bande interdite pour des applications optoélectroniques. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2012. Français. ⟨NNT : 2012PA112181⟩. ⟨tel-00746091⟩



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