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Caractérisations et modélisations physiques de contacts entre phases métalliques et Nitrure de Gallium semi-conducteur

Abstract : Group III nitride semiconductor materials (III-N), and especially gallium nitride (GaN), are now key materials for the whole human kind. Since years 1990, reliable and energy-efficient light emitting devices have been developed based on III-N compounds providing higher efficiency replacement solutions to incandescent bulbs. The same III-N materials may also provide higher performance device solutions for power electronics, allowing multi-functional on-chip integration. During the industrial development of devices, experimental work is focused on finding rapidly good enough solutions for each technology brick, and on the eventual integration of the bricks into a complete device processing flow. Very often, little time and effort can be devoted to the understanding of the underlying physical and chemical processes. The aim of this work has been to study the influence of the physical and chemical material structures on the electrical properties of metal - GaN Ohmic and Schottky contacts.
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Nicolas Thierry-Jebali. Caractérisations et modélisations physiques de contacts entre phases métalliques et Nitrure de Gallium semi-conducteur. Autre. Université Claude Bernard - Lyon I, 2011. Français. ⟨NNT : 2011LYO10304⟩. ⟨tel-00744661⟩

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