Electroluminescence in GaN/AlGaN step quantum wells at THz frequencies ,
Intersubband absorption of GaN/AlGaN step quantum wells at THz frequencies, Applied Physics Letters, vol.97, p.191101, 2010. ,
Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates, Applied Physics Letters, vol.96, issue.14, p.141911, 2009. ,
DOI : 10.1063/1.3379300
URL : https://hal.archives-ouvertes.fr/hal-01067374
Les contacts métalliques supérieurs recouvrent toute la surface des mésas et sont ramenés sur le diélectrique pour former des pads en forme carré. Le diamètre des pointes étant supérieur à celui des mésas, cette géométrie permet de contacter l'échantillon à l'intérieur de la station sous-pointes. Les contacts métalliques inférieurs sont déposés sur le ,
On the absorption of infrared radiation by electrons in semiconductor inversion layers, Solid State Communications, vol.88, p.939, 1993. ,
Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure, Applied Physics Letters, vol.89, p.101121, 2006. ,
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes, Applied Physics Letters, vol.97, issue.9, p.92104, 2010. ,
DOI : 10.1063/1.3484280
Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes, Applied Physics Letters, vol.97, issue.18, p.181109, 2010. ,
DOI : 10.1063/1.3515418
Photoconductive gain and generation???recombination noise in multiple???quantum???well infrared detectors, Applied Physics Letters, vol.63, issue.26, p.3589, 1993. ,
DOI : 10.1063/1.110105
Comments on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasmaassisted molecular-beam epitaxy, Applied Physics Letters, vol.83, p.3626, 2003. ,
Monte-Carlo study of GaN versus GaAs terahertz quantum cascade structures, Applied Physics Letters, vol.92, p.101112, 2008. ,
Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.56, issue.16, p.10024, 1997. ,
DOI : 10.1103/PhysRevB.56.R10024
Polarization fields in nitride nanostructures: 10 points to think about, Applied Surface Science, vol.166, issue.1-4, p.23, 2000. ,
DOI : 10.1016/S0169-4332(00)00434-7
quantum wells, Physical Review B, vol.75, issue.11, p.115336, 2007. ,
DOI : 10.1103/PhysRevB.75.115336
URL : https://hal.archives-ouvertes.fr/hal-00165310
Detailed analysis of second???harmonic generation near 10.6 ??m in GaAs/AlGaAs asymmetric quantum wells, Applied Physics Letters, vol.57, issue.3, p.215, 1990. ,
DOI : 10.1063/1.103742
Properties of advanced semiconductor materials GaN, 2001. ,
Long range resonant tunneling in quantum cascade structures, Applied Physics Letters, vol.96, issue.16, p.162103, 2010. ,
DOI : 10.1063/1.3399768
Long range resonant tunneling in quantum cascade structures, Applied Physics Letters, vol.96, issue.16, p.162103, 2010. ,
DOI : 10.1063/1.3399768
Traversal Time for Tunneling, Physical Review Letters, vol.49, issue.23, p.1739, 1982. ,
DOI : 10.1103/PhysRevLett.49.1739
Conductance of an array of elastic scatterers: A scattering-matrix approach, Physical Review B, vol.37, p.10125, 1988. ,
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications, IEEE Journal of Quantum Electronics, vol.22, issue.9, p.1853, 1986. ,
DOI : 10.1109/JQE.1986.1073171
Resonant tunneling in semiconductor double barriers, Applied Physics Letters, vol.24, issue.12, p.593, 1974. ,
DOI : 10.1063/1.1655067
Optical and structural properties of III-V nitrides under pressure, Physical Review B, vol.50, issue.7, pp.50-4397, 1994. ,
DOI : 10.1103/PhysRevB.50.4397
Electronic transport in mesoscopic system, 1998. ,
Polarity determination of GaN films by ion channeling and convergent beam electron diffraction, Applied Physics Letters, vol.69, issue.17, p.2480, 1996. ,
DOI : 10.1063/1.117504
Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells, Applied Physics Letters, vol.94, issue.8, p.141104, 2007. ,
DOI : 10.1063/1.3089840
Magnetic field dependent Hall data analysis of electron transport in modulationdoped AlGaN/GaN heterostructures, Journal of Applied Physics, vol.82, p.2996, 1997. ,
Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures, Physical Review B, vol.40, issue.2, p.1074, 1989. ,
DOI : 10.1103/PhysRevB.40.1074
Quantum cascade photodetector, Applied Physics Letters, vol.85, issue.14, p.2824, 2004. ,
DOI : 10.1063/1.1781731
URL : https://hal.archives-ouvertes.fr/hal-00004983
Oscillator strengths for optical band-to-band processes in GaN epilayers, Physical Review B, vol.54, issue.11, p.7678, 1996. ,
DOI : 10.1103/PhysRevB.54.7678
InGaAs???AlAsSb quantum cascade detectors operating in the near infrared, Applied Physics Letters, vol.91, issue.11, p.111115, 2007. ,
DOI : 10.1063/1.2784289
Intersubband absorption at ?????1.55?????m in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers, Applied Physics Letters, vol.77, issue.23, p.3722, 2000. ,
DOI : 10.1063/1.1332108
Intersubband absorption in degenerately doped GaN/AlxGa1???xN coupled double quantum wells, Applied Physics Letters, vol.79, issue.11, p.1590, 2001. ,
DOI : 10.1063/1.1403277
16.5??m quantum cascade detector using miniband transport, Applied Physics Letters, vol.90, issue.23, p.231111, 2007. ,
DOI : 10.1063/1.2743955
Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN, Applied Physics Letters, vol.88, p.172106, 2006. ,
Dark current analysis of quantum cascade detectors by magnetoresistance measurements, Physical Review B, vol.77, p.85307, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-00193979
Terahertz range quantum well infrared photodetector, Applied Physics Letters, vol.84, issue.4, p.475, 2004. ,
DOI : 10.1063/1.1641165
Many-body effects on terahertz quantum well detectors, Applied Physics Letters, vol.94, issue.20, p.201101, 2009. ,
DOI : 10.1063/1.3134485
Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths, Journal of Applied Physics, vol.100, p.44326, 2006. ,
Exchange and correlation in atoms, molecules, and solids by the spin-density-functional formalism, Physical Review B, vol.13, issue.10, p.4274, 1976. ,
DOI : 10.1103/PhysRevB.13.4274
Femtosecond gain dynamics and saturation behavior in InGaAsP multiple quantum well optical amplifiers, Applied Physics Letters, vol.57, p.2888, 1992. ,
Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy, Applied Physics Letters, vol.83, p.5196, 2003. ,
Quantum-cascade-laser structures as photodetectors, Applied Physics Letters, vol.81, issue.15, p.2683, 2002. ,
DOI : 10.1063/1.1512954
GaN/AlN-based quantum-well infrared photodetector for 1.55 ??m, Applied Physics Letters, vol.83, issue.3, p.572, 2003. ,
DOI : 10.1063/1.1594265
23GHz operation of a room temperature photovoltaic quantum cascade detector at 5.35??m, Applied Physics Letters, vol.89, issue.6, p.61119, 2006. ,
DOI : 10.1063/1.2269408
Midinfrared quantum cascade detector with a spectrally broad response, Applied Physics Letters, vol.93, issue.22, p.221106, 2008. ,
DOI : 10.1063/1.3036897
Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells, IEEE Journal of Quantum Electronics, vol.42, p.810, 2006. ,
GaN-based waveguide devices for long-wavelength optical communications, Applied Physics Letters, vol.82, issue.9, p.1326, 2003. ,
DOI : 10.1063/1.1557790
Birefringence of GaN/AlGaN optical waveguides, Birefringence of GaN/AlGaN optical waveguides, p.1698, 2003. ,
DOI : 10.1063/1.1606103
Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy, Applied Physics Letters, vol.81, issue.10, p.1803, 2002. ,
DOI : 10.1063/1.1505116
Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN???AlN quantum wells, Electronics Letters, vol.40, issue.15, p.962, 2004. ,
DOI : 10.1049/el:20045434
Sub-picosecond all-optical gate utilizing aN intersubband transition, Optics Express, vol.13, issue.10, p.3835, 2005. ,
DOI : 10.1364/OPEX.13.003835
Polarization dependent loss in III-nitride optical waveguides for telecommunication devices, Journal of Applied Physics, vol.99, issue.9, p.93107, 2006. ,
DOI : 10.1063/1.2195422
All-Optical Switch Utilizing Intersubband Transition in GaN Quantum Wells, IEEE Journal of Quantum Electronics, vol.42, issue.8, p.765, 2006. ,
DOI : 10.1109/JQE.2006.878189
III???nitrides: Growth, characterization, and properties, Journal of Applied Physics, vol.87, issue.3, p.965, 2000. ,
DOI : 10.1063/1.371971
Thermal Agitation of Electricity in Conductors, Physical Review, vol.32, issue.1, p.97, 1928. ,
DOI : 10.1103/PhysRev.32.97
Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 ??m wavelengths, Journal of Applied Physics, vol.93, issue.6, p.3194, 2003. ,
DOI : 10.1063/1.1556177
Simulation and design of GaN/AlGaN far-infrared (?????34?????m) quantum-cascade laser, Applied Physics Letters, vol.84, issue.16, p.2995, 2004. ,
DOI : 10.1063/1.1707219
Mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates, Applied Physics Letters, vol.95, p.141911, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-01067374
Electric and electromagnetic properties of semiconductors with a superlattice, Soviet Physics-Semiconductors, vol.6, p.120, 1972. ,
Electro-optical modulator at telecommunication wavelengths based on GaN/AlN coupled quantum wells, IEEE Photonics Technology Letters, vol.20, p.724, 2008. ,
AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy, Applied Physics Letters, vol.81, issue.9, p.1729, 2002. ,
DOI : 10.1063/1.1501157
, 3626 (2003)], Applied Physics Letters, vol.83, issue.17, p.3628, 2003. ,
DOI : 10.1063/1.1622988
Intersubband Absorption at? ? 1.2-1.6 ?m in GaN/AlN Multiple Quantum Wells Grown by rf-Plasma Molecular Beam Epitaxy, physica status solidi (a), vol.37, issue.1, p.124, 2002. ,
DOI : 10.1002/1521-396X(200207)192:1<124::AID-PSSA124>3.0.CO;2-3
Electronic transport in quantum cascade structures at equilibrium, Physical Review B, vol.74, issue.23, p.235325, 2006. ,
DOI : 10.1103/PhysRevB.74.235325
Terahertz semiconductor-heterostructure laser, Nature, vol.417, issue.156, 2002. ,
186 K operation of terahertz quantum-cascade lasers based on a diagonal design, Applied Physics Letters, vol.94, issue.13, p.131105, 2009. ,
DOI : 10.1063/1.3114418
Electron???optical-phonon scattering in wurtzite crystals, Physical Review B, vol.56, issue.3, p.997, 1997. ,
DOI : 10.1103/PhysRevB.56.997
Interface roughness transport in terahertz quantum cascade detectors, Applied Physics Letters, vol.96, issue.6, p.61111, 2010. ,
DOI : 10.1063/1.3310022
URL : https://hal.archives-ouvertes.fr/hal-01438633
Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells, Nonlinear optical waveguides based on near infrared intersubband transitions in GaN/AlN quantum wells, p.5860, 2007. ,
DOI : 10.1364/OE.15.005860
Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides, Optics Express, vol.15, issue.26, p.17922, 2007. ,
DOI : 10.1364/OE.15.017922
Multicolor voltage-tunable quantum-well infrared photodetector, IEEE Electron Device Letters, vol.14, p.566, 1993. ,
Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared, Applied Physics Letters, vol.83, issue.15, p.3111, 2003. ,
DOI : 10.1063/1.1618931
Terahertz quantum-cascade lasers based on a three-well active module, Applied Physics Letters, vol.90, issue.4, p.41112, 2009. ,
DOI : 10.1063/1.2437071
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells, Optics Express, vol.20, issue.11, p.12541, 2012. ,
DOI : 10.1364/OE.20.012541
Frequency limit of double???barrier resonant???tunneling oscillators, Applied Physics Letters, vol.47, issue.5, p.490, 1985. ,
DOI : 10.1063/1.96102
-type GaN, Applied Physics Letters, vol.70, issue.1, 1996. ,
DOI : 10.1063/1.119305
URL : https://hal.archives-ouvertes.fr/jpa-00214070
GaN/AlGaN intersubband optoelectronic devices, New Jounal of Physics, vol.11, p.125023, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-01005654
Transitions intersousbandes dans les puits quantiques GaN/AlN, p.11, 2011. ,
URL : https://hal.archives-ouvertes.fr/tel-00591962
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 ?m, Applied Physics Letters, vol.82, p.868, 2003. ,
Room-temperature intersubband emission of GaN/AlN quantum wells at =2.3???[micro sign]m, Electronics Letters, vol.42, issue.22, p.1308, 2006. ,
DOI : 10.1049/el:20062282
Short wavelength (??=2.13??m) intersubband luminescence from GaN???AlN quantum wells at room temperature, Applied Physics Letters, vol.90, issue.12, p.121106, 2007. ,
DOI : 10.1063/1.2715001
Shortwavelength intersubband electroabsorption modulation based on electron tunneling between coupled quantum wells, Applied Physics Letters, vol.90, p.223511, 2007. ,
Screw dislocations in GaN: The Ga-filled core model, Applied Physics Letters, vol.78, p.2288, 2001. ,
Physical properties of crystals, 1985. ,
Physics of resonant tunneling. The one-dimensional double-barrier case, Physical Review B, vol.29, issue.4, p.1970, 1984. ,
DOI : 10.1103/PhysRevB.29.1970
Observation of nonlinear optical rectification at 10.6 ??m in compositionally asymmetrical AlGaAs multiquantum wells, Applied Physics Letters, vol.55, issue.16, p.1597, 1989. ,
DOI : 10.1063/1.102248
Microstructure of Ti, Applied Physics Letters, vol.69, p.1556, 1996. ,
Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire, Materials Science and Engineering: B, vol.50, issue.1-3, p.61, 1997. ,
DOI : 10.1016/S0921-5107(97)00169-4
As intersubband photodetector operating at zero bias voltage, Applied Physics Letters, vol.68, issue.7, p.973, 1996. ,
DOI : 10.1063/1.116116
Strain effects on excitonic transitions in GaN: Deformation potentials, Strain effects on excitonic transitions in GaN: Deformations potentials, p.13460, 1996. ,
DOI : 10.1103/PhysRevB.54.13460
Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition, Japanese Journal of Applied Physics, vol.46, issue.10A, p.6639, 2007. ,
DOI : 10.1143/JJAP.46.6639
Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures, Journal of Applied Physics, vol.108, issue.10, p.103704, 2010. ,
DOI : 10.1063/1.3511334
Active region design of a terahertz GaN/ Al0.15Ga0.85N quantum cascade laser, Superlattices and Microstructures, vol.37, issue.2, 2005. ,
DOI : 10.1016/j.spmi.2004.09.046
Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-?? m Intersubband Transition in AlGaN/GaN Quantum Wells, Japanese Journal of Applied Physics, vol.36, issue.Part 2, No. 8A, p.1006, 2000. ,
DOI : 10.1143/JJAP.36.L1006
Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-??m Inter-Subband Transition, Japanese Journal of Applied Physics, vol.37, issue.Part 2, No. 4A, p.369, 1998. ,
DOI : 10.1143/JJAP.37.L369
Intraband absorption of doped GaN/AlN quantum dots at telecommunication wavelengths, Applied Physics Letters, vol.87, p.101912, 2005. ,
The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy, Applied Physics Express, vol.3, issue.12, p.125501, 2010. ,
DOI : 10.1143/APEX.3.125501
A high strain two-stack two-color quantum well infrared photodetector, Applied Physics Letters, vol.70, issue.7, p.859, 1997. ,
DOI : 10.1063/1.118298
A four-color quantum well infrared photodetector, Applied Physics Letters, vol.74, issue.9, p.1335, 1999. ,
DOI : 10.1063/1.123542
Tunneling in a finite superlattice, Applied Physics Letters, vol.22, issue.11, p.562, 1973. ,
DOI : 10.1063/1.1654509
Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures, Applied Physics Letters, vol.92, p.11112, 2008. ,
High speed operation of GaN/AlGaN quantum cascade detectors at ??1.55 ?m, Applied Physics Letters, vol.93, p.193509, 2008. ,
Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature, Journal of Applied Physics, vol.107, issue.8, p.83505, 2010. ,
DOI : 10.1063/1.3372763
Airy's functions implementation of the transfer-matrix method for resonant tunneling in variably spaced finite superlattices, IEEE Journal of Quantum Electronics, vol.32, issue.6, p.1093, 1996. ,
DOI : 10.1109/3.502388
Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, p.5815, 2001. ,
DOI : 10.1063/1.1368156
Band parameters for nitrogen-containing semiconductors, Journal of Applied Physics, vol.94, p.3675, 2003. ,
Quantum cascade lasers operating from 1.2to1.6THz, Applied Physics Letters, vol.91, issue.13, p.131122, 2007. ,
DOI : 10.1063/1.2793177
Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode, Optics Express, vol.13, issue.9, p.3331, 2005. ,
DOI : 10.1364/OPEX.13.003331
Terahertz quantum cascade lasers with double-resonant-phonon depopulation, Applied Physics Letters, vol.88, issue.26, p.261101, 2006. ,
DOI : 10.1063/1.2216112
Optical transitions in a step quantum well, Journal of Applied Physics, vol.65, issue.11, p.4377, 1989. ,
DOI : 10.1063/1.343276
Electroluminescence in GaN/AlGaN step quantum wells at THz frequencies ,
Ultrafast GaN based quantum cascade detector at ?=1.55 ?m ,
A simplified GaN/AlGaN quantum cascade detector with an alloy extractor, Applied Physics Letters, vol.101, issue.25 ,
DOI : 10.1063/1.4772501
Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure, Applied Physics Express, vol.5, issue.5, p.52203, 2012. ,
DOI : 10.1143/APEX.5.052203
m, Applied Physics Letters, vol.100, issue.18, p.181103, 2012. ,
DOI : 10.1063/1.4707904
URL : https://hal.archives-ouvertes.fr/hal-01067407
III-nitride intersubband photonics, Proceedings of SPIE, vol.8262, pp.82621-82622, 2012. ,
DOI : 10.1117/12.900002
Origin of the electrical instabilities in GaN/AlGaN double-barrier structure, Applied Physics Letters, vol.99, issue.14, p.142103, 2011. ,
DOI : 10.1063/1.3645011
Ballistic transport in GaN/AlGaN resonant tunneling diodes, Journal of Applied Physics, vol.109, issue.2, p.23717, 2011. ,
DOI : 10.1063/1.3533975
GaN-based quantum cascade photodetector with 1.5 microns peak detection wavelength, Electronics Letters, vol.46, p.1685, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-01067407
Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices, Journal of Electronic Materials, vol.47, issue.5, p.965, 2012. ,
DOI : 10.1007/s11664-012-1920-1
Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron, Applied Physics Letters, vol.99, p.202111, 2011. ,
Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range, Physical Review B, vol.83, issue.7, p.75313, 2011. ,
DOI : 10.1103/PhysRevB.83.075313
Band offsets in cubic GaN/AlN superlattices, Physical Review B, vol.83, p.195301, 2011. ,
Intersubband absorption of GaN/AlGaN step quantum wells at THz frequencies, Applied Physics Letters, vol.97, p.191101, 2010. ,
Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si (111) templates, Applied Physics Letters, vol.96, p.141903, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-01067374
GaN/AlGaN intersubband optoelectronic devices, New Journal of Physics, vol.11, p.125023, 2009. ,
Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates, Applied Physics Letters, vol.96, issue.14, p.141911, 2009. ,
DOI : 10.1063/1.3379300
URL : https://hal.archives-ouvertes.fr/hal-01067374