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Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz

Abstract : Intersubband devices based on III-nitrides have interesting properties for optoelectronics and photonics applications in the infrared. The heterostructures of these materials have a large conduction band offset of 1.75 eV and therefore allow covering the whole infrared electromagnetic spectral range. Furthermore, these materials are characterized by extremely short ISB relaxation times and are, consequently, potential candidates for the development of ultrafast optoelectronic devices at the fiber optics telecommunication wavelengths for fiber optics or for free space communication. On the other hand, thanks to the large LO phonon energy in these materials, these heterostructures offer the possibility of fabricating compact THz lasers operating at room temperature. In this context, I firstly present in this manuscript a theoretical and an experimental study of the electronic transport in simple AlGaN/GaN heterostructures namely resonant tunneling diodes and more complex structures such as multi-quantum wells based on III-nitrides. The modeling of the transport in RTDs shows the dependency of the current resonances on the sign of the applied voltage as well as the height of the double barrier. I also demonstrate that the experimentally observed electrical instabilities in these devices are due to the defects in the material. In the multiple quantum well structures, I give the first evidence of reproducible resonant tunneling transport. In chapter 3, I propose and develop several principles of quantum cascade detectors in the near infrared between 1 and 2 μm operating at room temperature. I demonstrate, using time-resolved bias-lead monitoring technique, that they are intrinsically very fast (picosecond). I also develop micro - QCD devices that have a -3 dB cut-off frequency beyond 40 GHz. The design of QCDs operating at longer wavelengths is discussed. In the last part of the manuscript, I present a spectroscopic study of GaN superlattices with ISB transitions in the far-infrared. I show that the utilization of step quantum wells allows to tune the ISB absorption frequency to the THz. I finally present the first demonstration of the intersubband electroluminescence from 2 to 9 THz in these structures.
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Submitted on : Monday, October 22, 2012 - 12:43:14 PM
Last modification on : Wednesday, October 14, 2020 - 3:57:09 AM
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  • HAL Id : tel-00744109, version 1



Salam Sakr. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2012. Français. ⟨NNT : 2012PA112207⟩. ⟨tel-00744109⟩



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