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Typiquement avec notre système de LFE nous avons une résolution minimum de 20 nm (contrairementàcontrairementà 400 nm pour la photolithographie UV) Une autre différence vient de la conduction de l'´ echantillon ,
appliquè a tous les types de substrats, mais ce n'est pas le cas pour la lithographie e-beam. Elle nécessite l'utilisation d'un substrat conducteur. Pour cela une couche conductrice d'oxyde indiumétainindiumétain (ITO) d'une vingtaine de nanomètres estévaporéeestévaporée sur une lamelle de verre de 22 mm × 22 mm et 170 µm d'´ epais ,
´ electron sont réaliséesréaliséesà partir d'un microscopémicroscopé electroniquè a balayage (MEB) de marque JEOL (modèle 6500) ´ equipé d'un " e-beam blanker " . La création des motifs est effectuéè a partir d'un ordinateuréquipéordinateuréquipé d'un ,
Etalement de 160 µL d'un solution de PMMA dilué dans l'´ ethylactate en concentration en volume [1 :1], sur un substrat conducteur. Il s'agit d'une résiné electro-sensible positif. Ceci signifie que les parties qui seront insolées seront dissoutes dans le développeur. Les paramètres de spin-coating utilisé sont résumés ,
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