, VHDL-AMS based design of an integrated power switch : Coupling compact
, Virtual Prototyping in Power Electronics, 2007.
, Verilog Analog Mixed-Signal Work Grouporg/twiki/bin/view.cgi/VerilogAMS, 1998.
, System Simulation Software for Multi-Domain Design. http://www.ansoft.com/products The system designer's guide to vhdl-ams : analog, mixed-signal, and mixed-technology modeling, Simplorer Ansoft Corporation, pp.41-79, 2003.
, Contribution au développement de l'Intégration Fonctionnelle. Mémoire d'habilitation à diriger les recherches, p.54, 2003.
, The insulated gate rectifier (IGR): A new power switching device, 1982 International Electron Devices Meeting, pp.264-267, 1982.
DOI : 10.1109/IEDM.1982.190269
, Modéles de Composants Semiconducteurs pour la Simulation des Circuits en Électronique de Puissance Recombination in the end regions of pin diodes, Solid-State Electronics, vol.16, issue.22 3, pp.76-293, 1979.
, Simulation et conception des transistors VDMOS de puissance Distributed approch of bipolar structures applied to the design of the power electronic systems, p.116, 1994.
, Behavioral models and specific design tool for new power integrated devices, Mars, pp.27-29, 2000.
, Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature, IEEE Transactions on Electron Devices, vol.22, issue.11, pp.1045-1047, 1975.
DOI : 10.1109/T-ED.1975.18267
, Analog behavioral simulation using smartspice. The Simulation Standard, pp.7-9, 1995.
, Modélisation de différentes technologies de transistors bipolaires à grille isolée pour la simulation d'applications en électronique de puissance, p.54, 2007.
, Modèle «distribué» de transistor igbt pour simulation de circuits en électronique de puissance, p.78, 1996.
, Avalanche breakdown in high-voltage D-MOS devices, IEEE Transactions on Electron Devices, vol.23, issue.1, pp.1-4, 1976.
DOI : 10.1109/T-ED.1976.18337
, A theoretical and experimental study of DMOS enhancement/depletion logic. Solid-State Circuits, IEEE Journal, vol.12, issue.3 9, pp.264-270, 1977.
, Three-dimensional thermal modeling based on the two-port network theory for hybrid or monolithic integrated power circuits. Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on, vol.19, issue.4, pp.501-507, 1996.
, Important Characteristics of VHDL-AMS and Modelica with Respect to Model Exchange, pp.89-125, 2007.
, Modelica - a general object-oriented language for continuous and discrete-event system modeling and simulation, Proceedings 35th Annual Simulation Symposium. SS 2002, pp.365-380, 2002.
DOI : 10.1109/SIMSYM.2002.1000174
, Analog solution of the ambipolar diffusion equation, Comptes rendus-academie des sciences Paris serie 2 Mecanique Physique Chimie Astronomie Fascicule B, pp.53-53, 1995.
, System vision http://www.mentor.com/products/ sm/system_integration_simulation_analysis/systemvision/. 40 [Graphics 09b] Mentor Graphics. Questa-ADMS presentation, Analog-Digital Mixed- Signal Simulator, p.39, 2009.
, An experimentally verified IGBT model implemented in the Saber circuit simulator, IEEE Transactions on, vol.9, issue.5, pp.532-542, 2002.
, The Infineon Power Simulation program for loss and thermal calculation of Infineon power modules and disk devices . http://www. infineon.com/cms/en/product/promopages/designtools/index, 2010.
, Composants semi-conducteurs : Intégration de puissance monolithique, 2007.
, State of the art and trends in power integration, MSM, Puerto Rico (USA), pp.20-29, 1999.
, Optimum carrier distribution of the IGBT, Solid-State Electronics, vol.44, issue.9, pp.1573-1583, 2000.
DOI : 10.1016/S0038-1101(00)00103-9
, Comparison of PT and NPT Cell Concept for 600V IGBTs, EUROPEAN CONFERENCE ON POWER ELEC- TRONICS AND APPLICATIONS, pp.4-4, 1997.
, System Modeling Language, p.31
, Méthodologie d ?approche pour la conception des transistors vdmos de puissance, Journal de Physique, vol.3, issue.3, pp.10-65, 1939.
, Multiple domain behavioral modeling using VHDL-AMS, 2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), pp.644-682, 2004.
DOI : 10.1109/ISCAS.2004.1329890
, 0 ) / N_d_emetteur_N ; N_a_emetteur_N0==(ni_emetteur_n0 * * 2 . 0 ) / N_d_emetteur_N, pp.0-0
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