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Approche de modélisation distribuée appliquée aux composants semi-conducteurs bipolaires de puissance en VHDL-AMS. Application à la diode PIN de puissance et à l'IGBT

Adnan Hneine 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : The distributed modeling approach of power bipolar devices implemented compactly by solving the ambipolar diffusion equation in the form of a Fourier series decomposition achieve an excellent compromise between accuray of results/simulation time. The implementation of the calculation engine as RC lines with variable parameters by a description language such as VHDL-AMS (IEEE 1076-1999) is presented. The description of the charge transport mechanism in low doped bases of power devices, complemented by other traditional models used in other areas (emitters, space charge layer or drift zone, MOS channel, buffer layer, etc...) is used to build complete models of power PIN diode and IGBT. These models/sub-models are stored in a library for reuse in other context by other engineers helping to reduce time and money during system design. Their implementation in Questa-ADMS software validates their suitability for circuits simulation of power electronics and their virtual prototyping. The temperature, integrated as a parameter at the present, can be managed in the short term as the amount returned by the compact thermal models. The methodology presented associated with the characteristics of the chosen description language allows the creation of new devices models for functional integration by simple assembly of various sub-models. The possibility of different levels of description in the main (architecture) of each submodel also allows an optimal use at all stages of design process of power electronic systems.
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Submitted on : Wednesday, September 26, 2012 - 8:20:02 AM
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  • HAL Id : tel-00735553, version 1

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Adnan Hneine. Approche de modélisation distribuée appliquée aux composants semi-conducteurs bipolaires de puissance en VHDL-AMS. Application à la diode PIN de puissance et à l'IGBT. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2012. Français. ⟨tel-00735553⟩

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