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Etude de l'épitaxie sélective de GaN/saphir et GaN/GaN-MOVPE par HVPE. Application à la croissance de structure périodiques de faible dimensionnalité

Abstract : Gallium nitride (GaN) is a booming material since the 1990s for optoelectronic applications such as blue and white light-emitting diodes (LEDs), blue laser diodes (LDs) or ultraviolet detectors. The activity of GaN epitaxy, by HVPE (Hydride Vapor Phase Epitaxy) growth process, was born at LASMEA in 1998. The first experimental and modeling studies conducted for samples of small dimension (area of about 1 to 3 cm2) led to the highlight of growth mechanisms and the control of the process. The development of this material on industrial scale required to work on surfaces slightly larger than 2 inches wide. A new HVPE experimental reactor was designed for this purpose, installed in the laboratory and the process was validated. Further investigations were conducted in the study of selective epitaxy of GaN to create periodic structures of low dimensionality with controlled morphologies. Beam and pyramidal GaN structures from 1 to 2 μm wide were grown by HVPE process. A systematic analysis of the variation of growth conditions is performed to control all the parameters influencing the morphologies and dimensions of the structures. Such study is related to the understanding of the growth mechanisms involved during the selective epitaxy of GaN.
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https://tel.archives-ouvertes.fr/tel-00731246
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Submitted on : Wednesday, September 12, 2012 - 1:33:56 PM
Last modification on : Friday, October 23, 2020 - 4:49:20 PM
Long-term archiving on: : Friday, December 16, 2016 - 12:56:22 PM

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  • HAL Id : tel-00731246, version 1

Citation

Julie Tourret. Etude de l'épitaxie sélective de GaN/saphir et GaN/GaN-MOVPE par HVPE. Application à la croissance de structure périodiques de faible dimensionnalité. Electronique. Université Blaise Pascal - Clermont-Ferrand II, 2008. Français. ⟨NNT : 2008CLF21887⟩. ⟨tel-00731246⟩

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