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Habilitation à diriger des recherches

Modélisation et simulation des composants et des systèmes électroniques de puissance

Abstract : Semiconductor device modeling is very classic. In this thesis, the state-of-the-art is recall. Then the modeling of semiconductor devices is developed on the base of the bond graph theory. Bond Graphs yield a unified approach of the system dynamics. This multiphysics approach requires en explicit representation of the energy flow inside a system which involves the approach to be very generic. Moreover the causality analysis enable to recover the well-known association rules of power electronic switches. Here, the bond graph modeling of the power semiconductor devices is based on the classical regional approach which parts devices into semiconductor regions like: space charge regions and neutral regions (in high level injection, in low level injection with a uniform doping concentration or in low level injection with a doping concentration gradient). The text continue with a short description of the PACTE simulator (http://pacte.ampereforge.org ) which enabled to simulate power PIN diode and power bipolar transistors re-using the same models of the semiconductor region. Then some conclusions and prospectives are given.
Document type :
Habilitation à diriger des recherches
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https://tel.archives-ouvertes.fr/tel-00731059
Contributor : Hervé Morel <>
Submitted on : Tuesday, September 11, 2012 - 6:11:03 PM
Last modification on : Sunday, October 25, 2020 - 7:08:13 AM
Long-term archiving on: : Friday, December 16, 2016 - 11:48:22 AM

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  • HAL Id : tel-00731059, version 1

Citation

Hervé Morel. Modélisation et simulation des composants et des systèmes électroniques de puissance. Energie électrique. INSA de Lyon, 1994. ⟨tel-00731059⟩

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