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Elaboration d'hétérostructures d'InN/InP et de semi-conducteurs III-V poreux : caractérisations physico-chimique, optique et électrique

Abstract : This work investigates the InN layer on InP (100) semiconductor surface made in ultra-high vacuum conditions. Auger electron spectroscopy (AES) and X-ray electron spectroscopy were used to follow the different steps of the nitridation process. Quantitative Auger signals interpretation using a stacking layers model for structures confirms that four monolayers of indium nitride have been created on InP (100). The optical studies of InN layers have been achieved by photoluminescence spectroscopy (PL) versus the excitation power and the sample temperature (10 K-300 K). The results show broad spectral band energy close to the lowest InN band gap reported in the literature. The temperature dependence of the PL peak energy has shown a S-shaped behaviour. The results suggest that the InN light emission is significantly affected by the change in carrier dynamics when temperature is increasing. This can be due to the large exciton localization effects. Surface characterization has been performed on p-type GaAs samples using X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy (AFM) and photoluminescence (PL) techniques, The short PL wavelength at 650-680 nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. Electrical measurements are also reported in the thesis.
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Submitted on : Tuesday, September 11, 2012 - 3:35:22 PM
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  • HAL Id : tel-00730963, version 1

Citation

Sana Ben Khalifa. Elaboration d'hétérostructures d'InN/InP et de semi-conducteurs III-V poreux : caractérisations physico-chimique, optique et électrique. Analyse de données, Statistiques et Probabilités [physics.data-an]. Université Blaise Pascal - Clermont-Ferrand II, 2008. Français. ⟨NNT : 2008CLF21864⟩. ⟨tel-00730963⟩

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