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D. Jang, J. W. Lee, K. Tachi, L. Montes, T. Ernst et al., Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors, Applied Physics Letters, vol.97, issue.7, p.73505, 2010.
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M. Casse, K. Tachi, S. Thiele, and T. Ernst, Spectroscopic charge pumping in Si nanowire transistors with a high-??/metal gate, Applied Physics Letters, vol.96, issue.12, p.123506, 2010.
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C. Colonna, J. Bonafos, K. Hartmann, W. Na, L. Van-den-daele et al., 3D suspended nanowires integration for CMOS and beyond, ECS) Transaction, vol.25, issue.7, pp.471-478, 2009.

T. Fenouillet-beranger, E. Ernst, C. L. Augendre, A. Royer, H. Zaslavsky et al., ) Selected SOI puzzles and tentative answers, 6th SemOI workshop & 1st Ukrainian-French SOI Seminar, 2010.

J. Colonna, V. Hartmann, L. Loup, S. Baud, V. Pauliac et al., A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates ( -Flash), suitable for full 3D integration, p.673, 2009.
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J. Saracco, J. Damlencourt, O. Foucher, and . Faynot, A 3D stacked nanowire technology -Applications in advanced CMOS and beyond, 7th International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2009.

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K. High-k-/-metal-gate, K. Tachi, P. Kakushima, K. Ahmet, N. Tsutsui et al., Improvement of interface properties of W/La2O3/Si MOS structure using Al capping layer, ECS) Transaction, vol.11, issue.4

K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii et al., Effect of Oxygen for Ultra-Thin La2O3 Film Deposition [Presentations as 1 st author] 16, Improvement of interface properties of W/La2O3/Si MOS structure using Al capping layerECS) Meeting, pp.425-435, 2006.

K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii et al., Effect of Oxygen for Ultra-Thin La2O3 Film Deposition, Physics and Technology of High-k Gate Dielectrics 4, ECS) Meeting, 1128.

P. Song, K. Ahmet, N. Tsutsui, T. Sugii, H. Hattori et al., Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below 0.5 nm, 2009.

N. Tsutsui, T. Sugii, H. Hattori, and . Iwai, Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, Journal of Applied Physics, vol.106, p.124903, 2009.

T. Sugii, H. Hattori, and . Iwai, Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation, Japanese Journal of Applied Physics, vol.48, 2009.

K. Kakushima, K. Okamoto, K. Tachi, J. Song, S. Sato et al., Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement, Journal of Applied Physics, vol.104, issue.10, 2008.
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M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui et al., Electrical Properties of CeOX /La2O3 Stack as a Gate Dielectric for Advanced MOSFET Technology, ECS Transactions, pp.153-160, 2008.
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K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Satot et al., Impact of Thin La2O3 Insertion for HfO2 MOSFET, ECS Transactions, p.29, 2008.
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K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato et al., Advantage of La2O3 gate dielectric over HfO2 for direct contact and mobility improvment, pp.38-126, 2008.

H. Nm and M. Gated, International Workshop on Dielectric Thin Films for future ULSI devices, 2008.

T. Sugii, H. Hattori, and . Iwai, Electrical Characterization of La2O3-Gated MOSFET with Mg Incorporation, International Workshop on Dielectric Thin Films for future ULSI devices, p.73, 2008.

J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui et al., Effects of N[sub 2]-Based Annealing on the Reliability Characteristics of Tungsten/La[sub 2]O[sub 3]/Silicon Capacitors, Journal of The Electrochemical Society, vol.154, issue.5, pp.110-116, 2007.
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T. Kawanago, K. Tachi, J. Song, K. Kakushima, P. Ahmet et al., Iwai Electrical Characterization of Directly Deposited La-Sc Oxide Complex for Gate Insulator Application, Microelectronic Engineering, vol.84, pp.9-10, 2007.

S. Sato, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui et al., Hattori and H. Iwai Thermal-stability improvement of LaON thin film formed using nitrogen radicals, Microelectronic Engineering, vol.84, pp.9-10, 2007.

S. Sato, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui et al., Thermal Stability of Lanthanum Oxynitride Thin Film Fabricated by in-situ Radical Nirtidation, 54th Japan Society of Applied Physics (JSAP) Spring Meeting, pp.29-42, 2007.

H. Hattori and . Iwai, Study of La2O3 Gate Dielectric Suitability for Future MIM and MOSFETs, IEEE Silicon Nanoelectronics Workshop, 2006.

J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui et al., Effects of N2-Based Annealing on the Reliability Characteristics of Tungsten/La2O3/Silicon Capacitors, ECS) Transaction, vol.3, issue.3, p.233, 2006.