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Study of interfaces and nanometric structures by ToF-SIMS : upon a spatially resolved quantitative analysis

Abstract : Next generation devices for microelectronics feature nanometric dimensions and incorporate heterogeneous materials. Accurate knowledge is needed on their chemical composition to address elaboration processes and understand electrical properties. ToF-SIMS is an interesting candidate, but it suffers from matrix effects and insufficient depth resolution. The aim of this work is to enable quantitative, depth resolved analysis of materials and structures for advanced devices with a standard ToF-SIMS. Studies focus in SiGe and high-k based materials, ultra shallow implants and materials for organic electronics. We investigate sample preparation, experimental condition optimization and data treatment to setup original analysis protocols. Accuracy of the new protocols is tested with leading edge external characterization techniques in each of the materials of interest. These developments allowed enhanced analysis quality in terms of depth resolution, accuracy and reproducibility.
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https://tel.archives-ouvertes.fr/tel-00721832
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Submitted on : Monday, July 30, 2012 - 3:17:55 PM
Last modification on : Thursday, June 11, 2020 - 5:04:04 PM
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  • HAL Id : tel-00721832, version 1

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Matthieu Py. Study of interfaces and nanometric structures by ToF-SIMS : upon a spatially resolved quantitative analysis. Micro and nanotechnologies/Microelectronics. Université de Grenoble, 2011. English. ⟨NNT : 2011GRENI086⟩. ⟨tel-00721832⟩

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