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Etude de l'intégration de transistors à canal en graphène épitaxié par une technologie compatible CMOS

Abstract : Graphene consists of a single atoms plane reorganized in honeycomb lattice. Ideal graphene has astonishing properties coming from his electronic structure in Dirac cone. One of these properties is an exceptional mobility indispensable for future transistors. In this work, our objective is to evaluate properties and performance of transistors based on graphene. These transistors are fabricated by using a CMOS-like integration. Since 2004, graphene can be obtained via sublimation of silicon carbide substrate. We used this technique to study graphene. We will present a particular method to enumerate the number of layer obtained in surface and the integration choosen to obtain short and thin transistors. We will show electrical characteristic obtained. The charge carrier mobility measured is similar to the state of the art. An analysis of the gate dielectric is also presented.
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Milène Clavel. Etude de l'intégration de transistors à canal en graphène épitaxié par une technologie compatible CMOS. Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT097⟩. ⟨tel-00721765⟩

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