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A. We, Y. Launay, P. Perrier, and . Support, We acknowledge technical support from the 'Pô les E ´ lectroniques' of the 'Départment Nano et MCBT' from the Institut Néel. M.Y. acknowledges financial support by Grant-in-Aid for Young Scientists A (no. 20684011), pp.and ERATO-JST

A. Contributions, S. H. , T. M. Sh, M. Y. , and S. T. , conceived and performed the experiments and analysed the data were in charge of the sample fabrication and early stages of the experiment. A.D.W. performed the molecular beam epitaxy growth of the high-mobility GaAs/AlGaAs heterostructure, C.B and T.M