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Propriété des défauts lacunaires dans le carbure de silicium : évolution de leur nature en fonction des conditions d'irradiation et intéraction avec l'hélium

Abstract : Silicon carbide is one of the envisaged materials for nuclear applications such as GEN IV fission reactor and fusion reactor. In this framework, SiC will be exposed to extreme temperature and radiation conditions and gas presence coming from activation and fission products. It is needed to better understand how the SiC physical properties will evolve under these conditions. In this work, we have specially focused our studies on the phenomena occurring at atomic scale and which modify the microstructure leading to the degradation of the macroscopic properties. The first part of this thesis is devoted to the damage characterization and especially to the vacancy-type defects created in SiC by heavy ion irradiation at various energies and fluences by using positron annihilation spectroscopy and Raman spectroscopy. The results highlight that the important electronic loss energy associated to high energy heavy ion irradiations modify the defect nature and distribution below 0.2 dpa. Beyond this value, the impact is not visible. For a damage induced at high dpa in the elastic collision regime, the SiC is amorphised and this structure is characterized by the formation of free volume similar to the hexa-vacancy. The second part is focused on the study of helium interaction with vacancy-type defects in SiC samples implanted with 50 keV-He ions at two fluences. First, the defect distribution evolution as a function of the temperature has been studied by PAS and has evidenced two evolution stages depending on the fluence. Then, thermodesorption measurements have shown that the second stage coincide with the helium desorption. Finally, RBS and NRA measurements in channeling mode have allowed us to localize helium atom in crystal structure and to observe that a part of helium migrates from tetrahedral interstitial sites at a temperature corresponding to the first stage one.
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Florence Linez. Propriété des défauts lacunaires dans le carbure de silicium : évolution de leur nature en fonction des conditions d'irradiation et intéraction avec l'hélium. Autre. Université d'Orléans, 2012. Français. ⟨NNT : 2012ORLE2006⟩. ⟨tel-00717380⟩

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