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Theses

Micro-actionneurs piézoélectriques

Abstract : PZT is a piezoelectric material which exhibits very good performances for microsystems actuation. In this work, the problem of sol-gel deposited PZT integration is discussed. First, state of the art of piezoelectric MEMS and PZT is presented. Then, the fabrication of homogeneous (100) and (111) oriented PZT thin films is presented. Layers thicknesses are comprised between 100 nm and 2 µm. Thirdly, ferroelectric and piezoelectric properties of the two oriented thin films are compared. For (100) oriented films, the d31 piezoelectric coefficient was greater than -150 pm/V and the e31,f reaches -16 C/m2. For (111) oriented films, the d31 and e31,f reach -100 pm/V and -14 C/m2 respectively. To explain observed differences, domain walls pinning was studied. Next, fabrication and characterization of a low voltage, fully packaged and thermally stabilized RF MEMS piezoelectric switch is presented. At the off-state, the switch isolation is -44 dB at 2 GHz. At the on-state, insertion losses are -0.74 dB at 2 GHz. The integration of a metallic gauge in a piezoelectric cantilever is also presented. Finally, developed processes are integrated in membranes fabrication without any degradation. A preliminary reliability study is presented. The fail mechanism of our components is an aging mechanism. This shows that our sol-gel deposition process is well-controlled on 8 inches wafers.
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Matthieu Cueff. Micro-actionneurs piézoélectriques. Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT103⟩. ⟨tel-00716847⟩

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