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Structures MOS-IGBT sur technologie SOI en vue de l'amélioration des performances à haute température de composants de puissance et de protections ESD

Houssam Arbess 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Within the framework of COTECH FNRAE project, the objectives of our work were the improvement of the SOI electronic structures at high-temperature operation (200°C). The chosen technology in this work is a smart power technology including low voltage CMOS (5 V), LDMOS power transistors (25 V, 45 V and 80 V), NPN and PNP bipolar transistor. To characterize this technology at different temperatures, as a first step, we designed a test vehicle by introducing specific design rules beneficial for the temperature behavior, both for low and high power components. We also studied new components architecture by combining in a single component a MOS and an IGBT, with an objective of self-compensation of the negative effects of temperature. To optimize the performance of these components (mixed MOS-IGBT), our methodology was based on using 2D and 3D Sentaurus physical simulation. As part of this work, two test vehicles were produced and characterized. These mixed structures MOS-IGBT have been proposed as ESD protection structures (Electro Static Discharge protection structures), to replace the LDMOS of a power clamp circuit. Based on 3D simulation, we have proposed several solutions, both topological and architectural, to significantly increase the level of the holding current. These various solutions have been experimentally validated. Finally, the good performance of these mixed structures have motivated their study as power structures.
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Submitted on : Friday, July 6, 2012 - 1:42:13 PM
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Houssam Arbess. Structures MOS-IGBT sur technologie SOI en vue de l'amélioration des performances à haute température de composants de puissance et de protections ESD. Autre. Université Paul Sabatier - Toulouse III, 2012. Français. ⟨tel-00715137⟩

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