D. Tournier, Composants de puissance en SiC -Technologie Techniques de l'ingénieur, 10-Fev, 2007.

C. Raynaud, Propriétés physiques et électroniques du carbure de silicium (SiC), pp.10-2007

U. Lindefelt, Doping-induced band edge displacements and band gap narrowing in 3C???, 4H???, 6H???SiC, and Si, Journal of Applied Physics, vol.84, issue.5, p.2628, 1998.
DOI : 10.1063/1.368374

D. Caughey and R. Thomas, Carrier mobilities in silicon empirically related to doping and field, Proceedings of the IEEE, pp.2192-2193, 1967.
DOI : 10.1109/PROC.1967.6123

A. O. Konstantinov, Q. Wahab, N. Nordell, and E. U. Lindefelt, Ionization rates and critical fields in 4H silicon carbide, Applied Physics Letters, vol.71, issue.1, pp.90-92, 1997.
DOI : 10.1063/1.119478

R. Raghunathan and B. J. Baliga, Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC, Solid-State Electronics, vol.43, issue.2, pp.199-211, 1999.
DOI : 10.1016/S0038-1101(98)00248-2

J. Heindl, H. P. Strunk, V. D. Heydemann, and E. G. Pensl, Micropipes: Hollow Tubes in Silicon Carbide, physica status solidi (a), vol.51, issue.309, pp.251-262, 1997.
DOI : 10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7

P. G. Neudeck, Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices, Materials Science Forum, vol.338, issue.342, pp.1161-1166, 2000.
DOI : 10.4028/www.scientific.net/MSF.338-342.1161

R. T. Leonard, Y. Khlebnikov, A. R. Powell, C. Basceri, M. F. Brady et al., 100 mm 4HN-SiC Wafers with Zero Micropipe Density, Materials Science Forum, vol.600, issue.603, pp.7-10, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.7

M. Dudley and X. Huang, Characterization of SiC using Synchrotron White Beam X-ray Topography, Materials Science Forum, vol.338, issue.342, pp.431-436, 2000.
DOI : 10.4028/www.scientific.net/MSF.338-342.431

E. Berkman, R. T. Leonard, M. J. Paisley, Y. Khlebnikov, M. J. O-'loughlin et al., Defect Status in SiC Manufacturing, Materials Science Forum, vol.615, issue.617, pp.3-6, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.3

R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland et al., Stacking-fault formation and propagation in 4H-SiC PiN diodes, Journal of Electronic Materials, vol.71, issue.356, pp.370-375, 2002.
DOI : 10.1007/s11664-002-0085-8

H. Lendenmann, J. P. Bergman, F. Dahlquist, and C. Hallin, Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC, Materials Science Forum, vol.433, issue.436, pp.901-906, 2003.
DOI : 10.4028/www.scientific.net/MSF.433-436.901

M. K. Das, J. J. Sumakeris, B. A. Hull, J. Richmond, S. Krishnaswami et al., Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields, Materials Science Forum, vol.483, pp.965-968, 2005.

A. A. Lebedev, Deep level centers in silicon carbide: A review, Semiconductors, vol.33, issue.2, pp.107-130, 1999.
DOI : 10.1134/1.1187657

W. Götz, A. Schöner, G. Pensl, W. Suttrop, W. J. Choyke et al., ???silicon carbide, Journal of Applied Physics, vol.73, issue.7, p.3332, 1993.
DOI : 10.1063/1.352983

G. Pensl and W. Choyke, Electrical and optical characterization of SiC, Physica B: Condensed Matter, vol.185, issue.1-4, pp.264-283, 1993.
DOI : 10.1016/0921-4526(93)90249-6

T. Choyke, C. Dalibor, and G. Peppermuller, Characterization of high-quality 4H- SiC epitaxial layers, Silicon Carbide and Related Materials, pp.393-396, 1995.

A. Chen and P. Srichaikul, Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiC, physica status solidi (b), vol.202, issue.1, pp.81-106, 1997.
DOI : 10.1002/1521-3951(199707)202:1<81::AID-PSSB81>3.0.CO;2-M

W. Suttrop, G. Pensl, W. J. Choyke, R. Stein, and E. S. Leibenzeder, Hall effect and infrared absorption measurements on nitrogen donors in 6H???silicon carbide, Journal of Applied Physics, vol.72, issue.8, p.3708, 1992.
DOI : 10.1063/1.352318

A. O. Evwaraye, S. R. Smith, and W. C. Mitchel, ???type 6H???silicon carbide as determined by admittance spectroscopy, Journal of Applied Physics, vol.75, issue.7, p.3472, 1994.
DOI : 10.1063/1.356108

C. Raynaud, F. Ducroquet, G. Guillot, L. M. Porter, and R. F. Davis, Determination of ionization energies of the nitrogen donors in 6H???SiC by admittance spectroscopy, Journal of Applied Physics, vol.76, issue.3, p.1956, 1994.
DOI : 10.1063/1.357655

C. Haberstroh, R. Helbig, and R. A. Stein, Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R), SiC(4H), and SiC(15R), p.509, 1994.
DOI : 10.1063/1.357103

N. I. Kuznetsov, A. P. Dmitriev, and A. S. Furman, Properties of a center associated with an Al impurity in 6H-SiC, Semiconductors, vol.28, issue.6, pp.584-586, 1994.

T. Stiasny and R. Helbig, Impurities in 4H and 6H SiC crystals, characterized by thermoluminescence and thermally stimulated conductivity, " presented at the Silicon Carbide and Related Materials, pp.389-392, 1995.

M. Ikeda, H. Matsunami, and E. T. Tanaka, SiC, Physical Review B, vol.22, issue.6, p.2842, 1980.
DOI : 10.1103/PhysRevB.22.2842

T. Troffer, C. Hassler, G. Pensl, K. Holzlein, H. Mitlehner et al., Boron-related defect centers in 4H silicon carbide, Inst. Phys. Conf. Ser, vol.142, p.281, 1996.

W. Suttrop, G. Pensl, and E. P. Lanig, Boron-related deep centers in 6H-SiC, Applied Physics A Solids and Surfaces, vol.21, issue.5, pp.231-237, 1990.
DOI : 10.1007/BF00324007

A. O. Evwaraye, S. R. Smith, W. C. Mitchel, and H. M. Hobgood, Boron acceptor levels in 6H-SiC bulk samples, Applied Physics Letters, vol.71, issue.9, p.1186, 1997.
DOI : 10.1063/1.119620

. Semisouth-laboratories and . Inc, Available: http://www.semisouth.com [Accessed: 29, 2011.

R. Singh, J. Cooper, M. Melloch, T. Chow, and E. J. Palmour, SiC power Schottky and PiN diodes, IEEE Transactions on Electron Devices, vol.49, issue.4, pp.665-672, 2002.
DOI : 10.1109/16.992877

J. Zhao, P. Alexandrov, and E. X. Li, Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes, IEEE Electron Device Letters, vol.24, issue.6, pp.402-404, 2003.
DOI : 10.1109/LED.2003.813370

T. Nakamura, T. Miyanagi, I. Kamata, T. Jikimoto, and E. H. Tsuchida, A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature, IEEE Electron Device Letters, vol.26, issue.2, pp.99-101, 2005.
DOI : 10.1109/LED.2004.841473

URL : https://hal.archives-ouvertes.fr/hal-01438515

K. Vassilevski, I. P. Nikitina, A. B. Horsfall, N. G. Wright, A. G. O-'neill et al., High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension, Materials Science Forum, vol.556, pp.873-876, 2007.
DOI : 10.4028/0-87849-442-1.873

D. Peters, W. Bartsch, B. Thomas, and E. R. Sommer, 6.5 kV SiC PiN Diodes with Improved Forward Characteristics, Materials Science Forum, vol.645, issue.648, pp.901-904, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.901

URL : https://hal.archives-ouvertes.fr/jpa-00251925

P. A. Losee, Y. Wang, C. H. Li, S. K. Sharma, I. Bhat et al., Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes, Materials Science Forum, vol.600, issue.603, pp.1003-1006, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.1003

W. Bartsch, R. Schoerner, and K. O. Dohnke, Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance, Materials Science Forum, vol.645, issue.648, pp.909-912, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.909

Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour et al., 12-19 kV 4H-SiC pin diodes with low power loss, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), pp.27-30, 2001.
DOI : 10.1109/ISPSD.2001.934552

M. K. Das, J. J. Sumakeris, M. J. Paisley, and A. R. Powell, High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift, Materials Science Forum, vol.457, issue.460, pp.1105-1108, 2004.
DOI : 10.4028/www.scientific.net/MSF.457-460.1105

. Amp, 5 kV 4H-SiC PiN Diode for High Current Power Modules, Power Semiconductor Devices and IC's IEEE International Symposium on, pp.1-4, 2006.

R. Singh, S. Ryu, J. Palmour, A. Hefner, and E. J. Lai, 1500 V, 4 amp 4H-SiC JBS diodes, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), pp.101-104, 2000.
DOI : 10.1109/ISPSD.2000.856782

F. Dahlquist, J. Svedberg, C. Zetterling, M. Östling, B. Breitholtz et al., A 2.8kV, Forward Drop JBS Diode with Low Leakage, Materials Science Forum, vol.338, issue.342, pp.1179-1182, 2000.
DOI : 10.4028/www.scientific.net/MSF.338-342.1179

P. Brosselard, N. Camara, V. Banu, X. Jorda, M. Vellvehi et al., Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.1847-1856, 2008.
DOI : 10.1109/TED.2008.926636

URL : https://hal.archives-ouvertes.fr/hal-00369497

J. Hu, L. X. Li, P. Alexandrov, X. H. Wang, and J. H. Zhao, 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application, Materials Science Forum, vol.600, issue.603, pp.947-950, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.947

K. G. Mckay and K. B. Mcafee, Electron Multiplication in Silicon and Germanium, Physical Review, vol.91, issue.5, p.1079, 1953.
DOI : 10.1103/PhysRev.91.1079

P. A. Wolff, Theory of Electron Multiplication in Silicon and Germanium, Physical Review, vol.95, issue.6, p.1415, 1954.
DOI : 10.1103/PhysRev.95.1415

W. Shockley, Problems related to p-n junctions in silicon, Solid-State Electronics, vol.2, issue.1, pp.35-60, 1961.
DOI : 10.1016/0038-1101(61)90054-5

A. G. Chynoweth, Junctions. II. Ionization Rates for Electrons, Journal of Applied Physics, vol.31, issue.7, p.1161, 1960.
DOI : 10.1063/1.1735795

G. A. Baraff, Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors, Physical Review, vol.128, issue.6, p.2507, 1962.
DOI : 10.1103/PhysRev.128.2507

C. R. Crowell, TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS, Applied Physics Letters, vol.9, issue.6, p.242, 1966.
DOI : 10.1063/1.1754731

K. K. Thornber, Applications of scaling to problems in high???field electronic transport, Journal of Applied Physics, vol.52, issue.1, p.279, 1981.
DOI : 10.1063/1.328490

M. Ruff, H. Mitlehner, and E. R. Helbig, SiC devices: physics and numerical simulation, IEEE Transactions on Electron Devices, vol.41, issue.6, pp.1040-1054, 1994.
DOI : 10.1109/16.293319

R. Raghunathan and B. Baliga, Measurement of electron and hole impact ionization coefficients for SiC, " in Power Semiconductor Devices and IC's, 1997. ISPSD '97, IEEE International Symposium on, pp.173-176, 1997.

A. O. Konstantinov, N. Nordell, Q. Wahab, and E. U. Lindefelt, Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide, Applied Physics Letters, vol.73, issue.13, pp.13-1850, 1998.
DOI : 10.1063/1.122303

P. Neudeck and C. Fazi, Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers, IEEE Electron Device Letters, vol.18, issue.3, pp.96-98, 1997.
DOI : 10.1109/55.556092

R. Raghunathan, D. Alok, and E. B. Baliga, High voltage 4H-SiC Schottky barrier diodes, IEEE Electron Device Letters, vol.16, issue.6, pp.226-227, 1995.
DOI : 10.1109/55.790716

R. Raghunathan and B. J. Baliga, Role of defects in producing negative temperature dependence of breakdown voltage in SiC, Applied Physics Letters, vol.72, issue.24, pp.24-3196, 1998.
DOI : 10.1063/1.121591

B. K. Ng, J. P. David, R. C. Tozer, G. J. Rees, F. Yan et al., Nonlocal effects in thin 4H-SiC UV avalanche photodiodes, IEEE Transactions on Electron Devices, vol.50, issue.8, pp.1724-1732, 2003.
DOI : 10.1109/TED.2003.815144

D. S. Ong, K. F. Li, G. J. Rees, J. P. David, and P. N. Robson, A simple model to determine multiplication and noise in avalanche photodiodes, Journal of Applied Physics, vol.83, issue.6, pp.3426-3428, 1998.
DOI : 10.1063/1.367111

W. S. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H. Y. Cha et al., Impact Ionization Coefficients in 4H-SiC, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.1984-1990, 2008.
DOI : 10.1109/TED.2008.926679

T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai et al., Impact ionization coefficients of 4H silicon carbide, Applied Physics Letters, vol.85, issue.8, pp.1380-1382, 2004.
DOI : 10.1063/1.1784520

V. Sankin, P. Shkrebiy, N. Savkina, and E. A. Lepneva, Specificity of Electron Impact Ionization in Superstructure Silicon Carbide, Materials Science Forum, vol.457, issue.460, pp.661-664, 2004.
DOI : 10.4028/www.scientific.net/MSF.457-460.661

S. Nakamura, H. Kumagai, T. Kimoto, and E. H. Matsunami, Anisotropy in breakdown field of 4H???SiC, Applied Physics Letters, vol.80, issue.18, p.3355, 2002.
DOI : 10.1063/1.1477271

S. Inc, Sentaurus Device User Guide, 2010.

A. O. Konstantinov, Q. Wahab, N. Nordell, and E. U. Lindefelt, Ionization rates and critical fields in 4H silicon carbide, Applied Physics Letters, vol.71, issue.1, pp.90-92, 1997.
DOI : 10.1063/1.119478

R. Raghunathan and B. J. Baliga, Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC, Solid-State Electronics, vol.43, issue.2, pp.199-211, 1999.
DOI : 10.1016/S0038-1101(98)00248-2

D. Ioannou, Analysis of the photocurrent decay (PCD) method for measuring minority-carrier lifetime in solar cells, IEEE Transactions on Electron Devices, vol.30, issue.12, pp.1834-1837, 1983.
DOI : 10.1109/T-ED.1983.21455

W. J. Choyke and L. Patrick, SiC, Physical Review, vol.172, issue.3, p.769, 1968.
DOI : 10.1103/PhysRev.172.769

URL : https://hal.archives-ouvertes.fr/hal-00004719

S. G. Sridhara, T. J. Eperjesi, R. P. Devaty, and W. J. Choyke, Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths, Materials Science and Engineering: B, vol.61, issue.62, pp.229-233, 1999.
DOI : 10.1016/S0921-5107(98)00508-X

T. Flohr and R. Helbig, Determination of minority???carrier lifetime and surface recombination velocity by optical???beam???induced???current measurements at different light wavelengths, Journal of Applied Physics, vol.66, issue.7, p.3060, 1989.
DOI : 10.1063/1.344161

K. Isoird, Etude de la tenue en tension des dispositifs de puissance en carbure de silicium par caractérisations OBIC et électriques, thèse de doctorat, 2001.

A. G. Chynoweth, Junctions. II. Ionization Rates for Electrons, Journal of Applied Physics, vol.31, issue.7, p.1161, 1960.
DOI : 10.1063/1.1735795

M. Ruff, H. Mitlehner, and R. Helbig, SiC devices: physics and numerical simulation, IEEE Transactions on Electron Devices, vol.41, issue.6, pp.1040-1054, 1994.
DOI : 10.1109/16.293319

R. Raghunathan and B. J. Baliga, Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC, Solid-State Electronics, vol.43, issue.2, pp.199-211, 1999.
DOI : 10.1016/S0038-1101(98)00248-2

A. Konstantinov, Q. Wahab, N. Nordell, and E. U. Lindefelt, Study of avalanche breakdown and impact ionization in 4H silicon carbide, Journal of Electronic Materials, vol.81, issue.4, pp.335-341, 1998.
DOI : 10.1007/s11664-998-0411-x

W. S. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H. Y. Cha et al., Impact Ionization Coefficients in 4H-SiC, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.1984-1990, 2008.
DOI : 10.1109/TED.2008.926679

T. Shinohe, T. Suzuki, E. K. Tanaka, and . Arai, Impact Ionization Coefficients of 4H-SiC, Materials Science Forum, vol.457, pp.673-676, 2004.

. Planson, Optical beam induced current measurements: principles and applications to SiC device characterization, physica status solidi, vol.206, issue.10, pp.2273-2283, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00398971

. Planson, Experimental determination of impact ionization coefficients in 4H-SiC, Diamond and Related Materials, vol.20, issue.3, pp.395-397, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00661429

D. L. Losee, Admittance spectroscopy of impurity levels in Schottky barriers, Journal of Applied Physics, vol.46, issue.5, p.2204, 1975.
DOI : 10.1063/1.321865

G. Vincent, D. Bois, and E. P. Pinard, Conductance and capacitance studies in GaP Schottky barriers, Journal of Applied Physics, vol.46, issue.12, pp.5173-5178, 1975.
DOI : 10.1063/1.322194

J. Pautrat, B. Katircioglu, N. Magnea, D. Bensahel, J. Pfister et al., Admittance spectroscopy: A powerful characterization technique for semiconductor crystals???Application to ZnTe, Solid-State Electronics, vol.23, issue.11, pp.1159-1169, 1980.
DOI : 10.1016/0038-1101(80)90028-3

J. Barbolla, S. Dueñas, and E. L. Bailón, Admittance spectroscopy in junctions, Solid-State Electronics, vol.35, issue.3, pp.285-297, 1992.
DOI : 10.1016/0038-1101(92)90232-2

W. Shockley and W. T. Read, Statistics of the Recombinations of Holes and Electrons, Physical Review, vol.87, issue.5, p.835, 1952.
DOI : 10.1103/PhysRev.87.835

A. O. Evwaraye, S. R. Smith, and W. C. Mitchel, ???type 6H???silicon carbide as determined by admittance spectroscopy, Journal of Applied Physics, vol.75, issue.7, pp.3472-3476, 1994.
DOI : 10.1063/1.356108

C. Raynaud, F. Ducroquet, G. Guillot, L. M. Porter, and R. F. Davis, Determination of ionization energies of the nitrogen donors in 6H???SiC by admittance spectroscopy, Journal of Applied Physics, vol.76, issue.3, pp.1956-1958, 1994.
DOI : 10.1063/1.357655

A. O. Evwaraye, S. R. Smith, and W. C. Mitchel, ???type 4H???SiC, Journal of Applied Physics, vol.79, issue.10, pp.7726-7730, 1996.
DOI : 10.1063/1.362376

C. Raynaud and G. Guillot, Dopant level freeze-out in 6H-SiC Schottky diodes and junctions, Proceedings of Semiconducting and Semi-Insulating Materials Conference, pp.227-230, 1996.
DOI : 10.1109/SIM.1996.571082

C. Raynaud, D. M. Nguyen, P. Brosselard, A. Pérez-tomás, D. Planson et al., Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses, Materials Science Forum, vol.615, issue.617, pp.671-674, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.671

URL : https://hal.archives-ouvertes.fr/hal-00391462

R. Ishii, K. Nakayama, H. Tsuchida, and E. Y. Sugawara, Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2, Materials Science Forum, vol.600, pp.1015-1018, 2009.

P. Lark, K. V. Vassilevski, I. P. Nikitina, G. Phelps, A. Horsfall et al., Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers, Materials Science Forum, vol.556, pp.937-940, 2007.

K. V. Vassilevski, K. Zekentes, A. Horsfall, C. M. Johnson, and N. G. Wright, Low Voltage Silicon Carbide Zener Diode, Materials Science Forum, vol.457, issue.460, pp.1029-1032, 2004.
DOI : 10.4028/www.scientific.net/MSF.457-460.1029

K. Vassilevski, K. Zekentes, and G. Constantinidis, Fabrication and electrical characterization of 4H-SiC p+???n???n+ diodes with low differential resistance, Solid-State Electronics, vol.44, issue.7, pp.1173-1177, 2000.
DOI : 10.1016/S0038-1101(00)00053-8

M. Lazar, H. Vang, P. Brosselard, C. Raynaud, P. Cremillieu et al., Deep SiC etching with RIE, Superlattices and Microstructures, vol.40, issue.4-6, pp.388-392, 2006.
DOI : 10.1016/j.spmi.2006.06.015

URL : https://hal.archives-ouvertes.fr/hal-00179458

S. Inc, Sentaurus Device User Guide, 2010.

F. Ducroquet, Influence des niveaux profonds et des phénomènes de surface sur les caractéristiques électriques de photodiodes GaInAs, 1989.

S. M. Sze, Physics of Semiconductor Devices, Second Edition, 1981.

C. Raynaud, Propriétés physiques et électroniques du carbure de silicium (SiC), pp.10-2007

P. Neudeck and C. Fazi, Positive temperature coefficient of breakdown voltage in 4H-SiC pn junction rectifiers, IEEE Electron Device Letters, vol.18, issue.3, pp.96-98, 1997.
DOI : 10.1109/55.556092

R. Raghunathan and B. J. Baliga, Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC, Solid-State Electronics, vol.43, issue.2, pp.199-211, 1999.
DOI : 10.1016/S0038-1101(98)00248-2

A. G. Chynoweth, Junctions. II. Ionization Rates for Electrons, Journal of Applied Physics, vol.31, issue.7, p.1161, 1960.
DOI : 10.1063/1.1735795

A. O. Konstantinov, Q. Wahab, N. Nordell, and E. U. Lindefelt, Ionization rates and critical fields in 4H silicon carbide, Applied Physics Letters, vol.71, issue.1, pp.90-92, 1997.
DOI : 10.1063/1.119478

T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai et al., Impact ionization coefficients of 4H silicon carbide, Applied Physics Letters, vol.85, issue.8, pp.1380-1382, 2004.
DOI : 10.1063/1.1784520

W. S. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H. Y. Cha et al., Impact Ionization Coefficients in 4H-SiC, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.1984-1990, 2008.
DOI : 10.1109/TED.2008.926679

D. M. Nguyen, G. Pâques, N. Dheilly, C. Raynaud, D. Tournier et al., Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection, Materials Science Forum, vol.679, issue.680, pp.567-570, 2011.
DOI : 10.4028/www.scientific.net/MSF.679-680.567

URL : https://hal.archives-ouvertes.fr/hal-00661470

D. Tournier and . Planson, OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients, International Conference on Silicon Carbide and Related Materials, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00803059

D. Tournier and . Planson, SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements, International Conference on Silicon Carbide and Related Materials, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00803060

D. Tournier and . Planson, OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients, International Conference on Silicon Carbide and Related Materials, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00803059

D. Tournier and . Planson, SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements, International Conference on Silicon Carbide and Related Materials, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00803060

D. Scharnholz and . Planson, Avalanche diodes with low temperature dependence in 4H- SiC suitable for parallel protection, Materials Science Forum, pp.679-680, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00661470

. Planson, Experimental determination of impact ionization in 4H-SiC, Diamond and Related Materials, vol.20, issue.3, pp.395-397, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00661429

. Planson, Optical beam induced current measurements : principles and applications to SiC device characterization, Physica Status Solidi, vol.206, issue.10, pp.2273-2283, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00398971

C. Raynaud, D. M. Nguyen, P. Brosselard, A. Perez-tomas, D. Planson et al., Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses Autres articles publiés pendant cette thèse, Materials Science Forum, pp.615-617, 2009.

M. Soueidan, M. Lazar, D. M. Nguyen, D. Tournier, C. Raynaud et al., Process Optimization for High Temperature SiC Lateral Device Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC, Materials Science Forum Materials Science Forum, pp.615-617, 2008.

. Attaque-d-', Al Remover Implantation de l'émetteur par N à 300°C Energie d'implantation (keV) Dose, pp.12-14

M. Gravure, B. Les, and C. Nettoyage, CARO 2x10' + HF 30

T. Dépôt-de, Ni (100nm) sur la face arrière Litho du niveau Metal_thin Dépôt de Ti (10 nm)/Ni (100 nm) Lift-off, 2010.

C. Nettoyage, BOE 1', Plasma d'O 2 5'x2 faces, acétone chaud 5', éthanol 5

T. Dépôt-de, Ni sur la face arrière 5 nm