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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses Autres articles publiés pendant cette thèse, Materials Science Forum, pp.615-617, 2009. ,
Process Optimization for High Temperature SiC Lateral Device Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC, Materials Science Forum Materials Science Forum, pp.615-617, 2008. ,
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