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Développement et élaboration par MOCVD de matériaux à changement de phase à base d'alliages GeTe : applications aux mémoires embarquées pour la microélectronique

Abstract : Phase-Change Random Access Memories (PCRAM) are one of the most promising candidates for next generation of nonvolatile memories. However this technology presents two major drawbacks: an archival life for high operating temperatures too short and power consumption too high. The first objective of this work was to develop new phase change materials by PVD to replace the common Ge2Sb2Te5 unsuitable for embedded applications. The second objective was to develop the targeted material by plasma-assisted MOCVD to assess the feasibility of confined devices requiring low operating currents. The study of binary GeTe material showed higher performance than Ge2Sb2Te5 including an estimated archival life up to ten years at 110°C. The impact of the incorporation of doping elements N and C in GeTe has been under evaluation for development of MOCVD. It has been shown a pronounced increase in thermal stability of doped materials that we explain by the formation of an amorphous phase of nitride or carbide during crystallization. Using a pulsed liquid MOCVD tool with plasma assistance allowed depositing GeTe thin films in crystalline or amorphous phase, with properties of phase transition similar to sputtered GeTe ones.
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Submitted on : Thursday, February 9, 2012 - 1:50:09 PM
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Emmanuel Gourvest. Développement et élaboration par MOCVD de matériaux à changement de phase à base d'alliages GeTe : applications aux mémoires embarquées pour la microélectronique. Micro et nanotechnologies/Microélectronique. Université de Grenoble, 2010. Français. ⟨tel-00668137⟩

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