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ELABORATION DE GRAPHENE PAR EPITAXIE PAR JETS MOLECULAIRES ET CARACTERISATION

Abstract : Since the first publications in 2004, three techniques are mainly used to grow graphene, exfoliation, chemical vapor deposition and graphitization on silicon carbide. Only the two latter ones are suitable with microelectronics technological processes. In this thesis, another method of growth is studied, molecular beam epitaxy. SiC has been chosen as substrate, because of the low lattice mismatch with graphene and for technology compatibility. Thin films of graphene have been successfully grown from a solid carbon source on both faces of SiC. Amorphization and graphitization restrain the growth temperature range. The MBE graphene structure depends on the considered SiC face, as graphene grown by graphitization does (C-rich interface layer and graphite stacking on the Si face, rotated and electronically uncoupled graphene layers on the C face). The valence bands have been measured by angle resolved photoelectron spectroscopy and show the characteristic Dirac cone along the ΓК direction. However, defects are present in the MBE film, resulting in low electron mobility. This last point has been improved by growth under an external silicon flux, allowing higher temperature to be used.
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https://tel.archives-ouvertes.fr/tel-00665851
Contributor : Eléonore Moreau <>
Submitted on : Thursday, February 2, 2012 - 8:06:39 PM
Last modification on : Tuesday, November 24, 2020 - 2:18:10 PM
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  • HAL Id : tel-00665851, version 1

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Eléonore Moreau. ELABORATION DE GRAPHENE PAR EPITAXIE PAR JETS MOLECULAIRES ET CARACTERISATION. Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2011. Français. ⟨tel-00665851⟩

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