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Jonctions tunnel magnétiques à anisotropie perpendiculaire et écriture assistée thermiquement

Abstract : In order to increase the storage density of magnetoresistive random access memories (MRAM), magnetic materials with perpendicular anisotropy are very appealing thanks to high anisotropy. However, the enhancement of anisotropy induces an increase of writing consumption as well. A new thermally assisted switching concept has been proposed by SPINTEC laboratory. The principle is to design a highly stable structure at stand-by temperature which loses its anisotropy when heated, making thus the switching easier. The aim of this thesis is to validate experimentally this concept. The first chapters describe the optimisation of out-of-plane magnetic materials such as (Co/Pt), (Co/Pd) and (Co/Tb) multilayers. Their integration in magnetic tunnel junctions is then presented. The evolution of anisotropy with temperature is a critical parameter for thermally assisted writing and has been therefore studied. Finally, the efficiency of this thermally assisted writing is demonstrated: the developed structures present a reduced consumption compared to standard structures and high stability at room temperature.
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Submitted on : Tuesday, January 3, 2012 - 3:37:32 PM
Last modification on : Wednesday, November 4, 2020 - 2:48:52 PM
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  • HAL Id : tel-00656105, version 1



Sébastien Bandiera. Jonctions tunnel magnétiques à anisotropie perpendiculaire et écriture assistée thermiquement. Physique des accélérateurs [physics.acc-ph]. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENY053⟩. ⟨tel-00656105⟩



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