]. T. Aselage and D. R. Tellant, and boron carbide, Physical Review B, vol.57, issue.5, p.2675, 1998.
DOI : 10.1103/PhysRevB.57.2675

C. Bonafos, Rôle des défauts End-Of-Range dans la diffusion anormale dubore dans le Si, Institut National des Sciences Appliqués, 1996.

C. Bonafos, M. Omri, B. D. Mauduit, G. Benassayag, A. Claverie et al., Transient enhanced diffusion of boron in presence of end-of-range defects, Journal of Applied Physics, vol.82, issue.6, 1997.
DOI : 10.1063/1.366117

S. Boninelli, S. Mirabella, E. Bruno, F. Priolo, F. Cristiano et al., Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy, Applied Physics Letters, vol.91, issue.3, p.31905, 2007.
DOI : 10.1063/1.2757145

N. Cherkashin, M. Hytch, F. Cristiano, and A. Claverie, Structure determination of clusters formed in ultra-low energy high-dose implanted silicon, 2005.

A. Claverie, L. F. Giles, M. Omri, B. De-mauduit, B. Assayag et al., Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, vol.147, pp.1-4, 1999.

]. O. Cojocaru-mirédin, D. Mangelinck, and D. Blavette, Nucleation of boron clusters in implanted silicon, Journal of Applied Physics, vol.106, issue.11, p.113525, 2009.
DOI : 10.1063/1.3265998

B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and P. R. Briddon, Identification of the tetra-interstitial in silicon, Journal of Physics: Condensed Matter, vol.13, issue.1, p.1, 2001.
DOI : 10.1088/0953-8984/13/1/101

N. E. Cowern, H. F. Jos, and K. T. Janssen, Role of point defects in the transient diffusion and clustering of implanted boron in silicon, Materials Science and Engineering: B, vol.4, issue.1-4, pp.1-4, 1989.
DOI : 10.1016/0921-5107(89)90224-9

N. E. Cowern, K. T. Janssen, G. F. Van-de-walle, and D. J. Gravesteijn, Impurity diffusion via an intermediate species: The B-Si system, Physical Review Letters, vol.65, issue.19, pp.65-2434, 1990.
DOI : 10.1103/PhysRevLett.65.2434

N. E. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. Huizing et al., Energetics of Self-Interstitial Clusters in Si, Physical Review Letters, vol.82, issue.22, p.82, 1999.
DOI : 10.1103/PhysRevLett.82.4460

N. Cowern and C. S. Rafferty, Enhanced Diffusion in Silicon Processing, MRS Bulletin, vol.128, issue.06, 2000.
DOI : 10.1557/mrs2000.97

F. Cristiano, X. Hebras, N. Cherkashin, A. Claverie, W. Lerch et al., Clusters formation in ultralow-energy high-dose boron-implanted silicon, Applied Physics Letters, vol.83, issue.26, pp.83-5407, 2003.
DOI : 10.1063/1.1637440

F. Cristiano, Ion beam induced defects in crystalline silicon. Nuclear Instru-ments and Methods in Physics Research Section B: Beam Interactions with, Materials and Atoms, pp.216-68, 2006.

D. J. Eaglesham, P. A. Stolk, H. Gossmann, and J. M. Poate, Implantation and transient B diffusion in Si: The source of the interstitials, Applied Physics Letters, vol.65, issue.18, pp.6518-2305, 1994.
DOI : 10.1063/1.112725

W. Hofker, H. W. Werner, D. P. Oosthoek, and H. A. De-grefte, Influence of annealing on the concentration profiles of boron implantations in silicon, Applied physics, vol.41, issue.5, pp.265-278, 1973.
DOI : 10.1007/BF00889509

J. Kim, F. Kirchhoff, W. G. Aulbur, J. W. Wilkins, F. S. Khan et al., Thermally Activated Reorientation of Di-interstitial Defects in Silicon, Physical Review Letters, vol.83, issue.10, p.83, 1990.
DOI : 10.1103/PhysRevLett.83.1990

W. Luo and P. Clancy, Identification of stable boron clusters in c-Si using tight-binding statics, Journal of Applied Physics, vol.89, issue.3, pp.1596-1604, 1998.
DOI : 10.1063/1.1335644

D. Mathiot and J. C. Pfister, Dopant diffusion in silicon: A consistent view involving nonequilibrium defects, Journal of Applied Physics, vol.55, issue.10, pp.3518-3530, 1984.
DOI : 10.1063/1.332941

M. D. Matthews and S. J. Ashby, The dynamic observation of the formation of defects in silicon under electron and proton irradiation, Philosophical Magazine, vol.17, issue.6, pp.1313-1322, 1973.
DOI : 10.1080/14786437308226889

A. E. Michel, W. Rausch, P. A. Ronsheim, and R. H. Kastl, Rapid annealing and the anomalous diffusion of ion implanted boron into silicon, Applied Physics Letters, vol.50, issue.7, pp.416-418, 1987.
DOI : 10.1063/1.98160

]. M. Ngamo, S. Duguay, F. Cristiano, K. Daoud-ketata, and P. Pareige, Atomic scale study of boron interstitial clusters in ion-implanted silicon, Journal of Applied Physics, vol.105, issue.10, p.104904, 2009.
DOI : 10.1063/1.3126498

L. Pelaz, M. Jaraiz, G. H. Gilmer, H. Gossmann, C. S. Rafferty et al., B diffusion and clustering in ion implanted Si: The role of B cluster precursors, Applied Physics Letters, vol.70, issue.17, pp.70-2285, 1997.
DOI : 10.1063/1.118839

P. Pichler, Intrinsic point defects, impurities, and their diffusion in silicon, Computational microelectronics, vol.554, 2004.
DOI : 10.1007/978-3-7091-0597-9

S. Solmi, F. Baruffaldi, C. , and R. , Diffusion of boron in silicon during post???implantation annealing, Journal of Applied Physics, vol.69, issue.4, pp.2135-2142, 1991.
DOI : 10.1063/1.348740

S. Solmi, M. Bersani, M. Sbetti, J. L. Hansen, and A. N. Larsen, Boron interstitialsilicon clusters and their effects on transient enhanced diffusion of boron in silicon, J. of Appl. Phys, issue.8, pp.88-4547, 2000.

P. A. Stolk, H. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty et al., Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon, Journal of Applied Physics, vol.81, issue.9, pp.6031-6050, 1997.
DOI : 10.1063/1.364452

]. S. Takeda, An Atomic Model of Electron-Irradiation-Induced Defects on {113} in Si, Japanese Journal of Applied Physics, vol.30, issue.Part 2, No. 4A, p.639, 1991.
DOI : 10.1143/JJAP.30.L639

]. O. Cojocaru-mirédin, D. Mangelinck, and D. Blavette, Nucleation of boron clusters in implanted silicon, Journal of Applied Physics, vol.106, issue.11, p.113525, 2009.
DOI : 10.1063/1.3265998

]. Q. Du and L. Zhang, A constrained string method and its numerical analysis, Communications in Mathematical Sciences, vol.7, issue.4, p.1039, 2009.
DOI : 10.4310/CMS.2009.v7.n4.a11

. Gibbs, The Collected Works, 1928.

]. G. Henkelman and H. Jónsson, Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points, The Journal of Chemical Physics, vol.113, issue.22, p.9978, 2000.
DOI : 10.1063/1.1323224

]. J. Lutsko, Density functional theory of inhomogeneous liquids. II. A fundamental measure approach, The Journal of Chemical Physics, vol.128, issue.18, p.184711, 2008.
DOI : 10.1063/1.2916694

]. C. Qiu, T. Qian, and W. Ren, Application of the string method to the study of critical nuclei in capillary condensation, The Journal of Chemical Physics, vol.129, issue.15, p.154711, 2008.
DOI : 10.1063/1.2996516

J. W. Schmelzer, A. R. Gokhman, and V. M. Fokin, On the Dynamics of First-Order Phase Transitions in Multi-Component Systems, J. Colloid Interface Science, vol.272, issue.109, 2004.

]. K. Thompson, P. L. Flaitz, P. Ronsheim, D. J. Larson, and T. F. Kelly, Imaging of Arsenic Cottrell Atmospheres Around Silicon Defects by Three-Dimensional Atom Probe Tomography, Science, vol.317, issue.5843, p.1370, 2007.
DOI : 10.1126/science.1145428

]. D. Blavette, B. Deconihout, A. Bostel, J. M. Sarrau, M. Bouet et al., An atom probe for three-dimensional tomography, Nature, vol.363, issue.6428, pp.432-435, 1993.
DOI : 10.1038/363432a0

]. D. Blavette, T. Kassab, E. Cadel, A. Mackel, F. Vurpillot et al., Laser-assisted atom probe tomography and nanosciences, International Journal of Materials Research, vol.99, issue.5, pp.454-460, 2008.
DOI : 10.3139/146.101672

]. J. Bunton, J. D. Olson, D. R. Lenz, and T. F. Kelly, Advances in Pulsed-Laser Atom Probe: Instrument and Specimen Design for Optimum Performance, Microscopy and Microanalysis, vol.72, issue.06, pp.418-427, 2007.
DOI : 10.1103/PhysRevB.30.4946

]. A. Cerezo, T. J. Godfrey, and G. D. Smith, Application of a position???sensitive detector to atom probe microanalysis, Review of Scientific Instruments, vol.59, issue.6, pp.862-866, 1988.
DOI : 10.1063/1.1139794

]. A. Cerezo and L. Davin, Aspects of the observation of clusters in the 3-dimensional atom probe, Surface and Interface Analysis, vol.353, issue.2-3, pp.184-188, 2007.
DOI : 10.1002/sia.2486

]. P. Clark and F. C. Evans, Distance to Nearest Neighbor as a Measure of Spatial Relationships in Populations, Ecology, vol.35, issue.4, pp.445-453, 1954.
DOI : 10.2307/1931034

]. P. Clark and F. C. Evans, Generalization of a Nearest Neighbor Measure of Dispersion for Use in K Dimensions, Ecology, vol.60, issue.2, pp.316-317, 1979.
DOI : 10.2307/1937660

]. G. Costa, F. Vurpillot, A. Bostel, M. Bouet, and B. Deconihout, Design of a delay-line position-sensitive detector with improved performance, Review of Scientific Instruments, vol.76, issue.1, p.13304, 2005.
DOI : 10.1063/1.1829975

]. W. Lefebvre, T. Philippe, and F. Vurpillot, Application of Delaunay tessellation for the characterization of solute-rich clusters in atom probe tomography, Ultramicroscopy, vol.111, issue.3, pp.200-206, 2011.
DOI : 10.1016/j.ultramic.2010.11.034

]. M. Miller, Atom Probe Tomography Klumer Academic, 2000.

]. M. Moody, L. T. Stephenson, P. V. Liddicoat, and S. P. Ringer, Contingency table techniques for three dimensional atom probe tomography, Microscopy Research and Technique, vol.65, issue.8, pp.258-268, 2007.
DOI : 10.1002/jemt.20412

]. M. Moody, L. T. Stephenson, A. V. Ceguerra, and S. P. Ringer, Quantitative binomial distribution analyses of nanoscale like???solute atom clustering and segregation in atom probe tomography data, Microscopy Research and Technique, vol.95, issue.8, pp.542-550, 2008.
DOI : 10.1002/jemt.20582

]. E. Müller, Field Desorption, Physical Review, vol.102, issue.3, pp.618-624, 1956.
DOI : 10.1103/PhysRev.102.618

]. E. Müller, J. A. Panitz, and S. B. Mclane, The Atom???Probe Field Ion Microscope, Review of Scientific Instruments, vol.39, issue.1, pp.83-86, 1968.
DOI : 10.1063/1.1683116

]. T. Philippe, S. De-geuser, W. Duguay, O. Lefebvre, G. D. Cojocaru-mirédin et al., Clustering and nearest neighbour distances in atom-probe tomography, Ultramicroscopy, vol.109, issue.10, p.1304, 2009.
DOI : 10.1016/j.ultramic.2009.06.007
URL : https://hal.archives-ouvertes.fr/hal-00457542

]. T. Philippe, O. Cojocaru-mirédin, S. Duguay, and D. Blavette, Clustering and nearest neighbour distances in atom probe tomography: the influence of the interfaces, Journal of Microscopy, vol.95, issue.8, pp.72-77, 2010.
DOI : 10.1111/j.1365-2818.2009.03359.x

]. T. Philippe, M. Gruber, F. Vurpillot, and D. Blavette, Clustering and Local Magnification Effects in Atom Probe Tomography: A Statistical Approach, Microscopy and Microanalysis, vol.48, issue.05, pp.643-648, 2010.
DOI : 10.1063/1.2194089

]. P. Ronsheim, P. Flaitz, M. Hatzistergos, C. Molella, K. Thompson et al., Impurity measurements in silicon with D-SIMS and atom probe tomography, Proceedings of the Sixteenth International Conference on Secondary Ion Mass Spectrometry, pp.1547-1550, 2008.
DOI : 10.1016/j.apsusc.2008.05.247

]. L. Stephenson, M. P. Moody, P. V. Liddicoat, and S. P. Ringer, New Techniques for the Analysis of Fine-Scaled Clustering Phenomena within Atom Probe Tomography (APT) Data, Microscopy and Microanalysis, vol.353, issue.06, pp.13-448, 2007.
DOI : 10.1016/S0304-3991(02)00319-4

H. R. Thompson, Distribution of Distance to Nth Neighbour in a Population of Randomly Distributed Individuals, Ecology, vol.37, issue.2, pp.391-394, 1956.
DOI : 10.2307/1933159

]. T. Tsong, Y. Liou, and S. Mclane, Methods for a precision measurement of ionic masses and appearance energies using the pulsed???laser time???of???flight atom probe, Review of Scientific Instruments, vol.55, issue.8, p.1246, 1984.
DOI : 10.1063/1.1137930

]. F. Vurpillot, A. Bostel, and D. Blavette, A new approach to the interpretation of atom probe field-ion microscopy images, Ultramicroscopy, vol.89, issue.1-3, pp.137-144, 2001.
DOI : 10.1016/S0304-3991(01)00097-3

]. D. Blavette, E. Cadel, A. Fraczkiewicz, and A. Menand, Three-Dimensional Atomic-Scale Imaging of Impurity Segregation to Line Defects, Science, vol.286, issue.5448, p.2317, 1999.
DOI : 10.1126/science.286.5448.2317

]. O. Cojocaru-mirédin, D. Mangelinck, and D. Blavette, Nucleation of boron clusters in implanted silicon, Journal of Applied Physics, vol.106, issue.11, p.113525, 2009.
DOI : 10.1063/1.3265998

]. S. Duguay, T. Philippe, F. Cristiano, and D. Blavette, Direct imaging of boron segregation to extended defects in silicon, Applied Physics Letters, vol.97, issue.24, p.242104, 2010.
DOI : 10.1063/1.3526376

]. S. Jeng, T. P. Ma, R. Cauteri, M. Anderle, and G. Rubloff, Anomalous diffusion of fluorine in silicon, Applied Physics Letters, vol.61, issue.11, p.61, 1310.
DOI : 10.1063/1.107575

]. T. Philippe, S. Duguay, D. Mathiot, and D. Blavette, Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation, Journal of Applied Physics, vol.109, issue.2, p.23501, 2011.
DOI : 10.1063/1.3533416
URL : https://hal.archives-ouvertes.fr/hal-00597120

]. C. Poon, A. See, Y. Tan, M. Zhou, and D. Gui, Suppression of boron deactivation and diffusion in preamorphized silicon after nonmelt laser annealing by carbon co-implantation, Journal of Applied Physics, vol.103, issue.8, p.84906, 2008.
DOI : 10.1063/1.2909957

]. C. Szeles, B. Nielson, P. Asoka-kumar, K. Lynn, A. Anderle et al., Role of Implantation Induced Defects in Surface-Oriented Diffusion of Fluorine in Silicon, J. of Appl. Phys, vol.3403, p.76, 1994.

]. O. Cojocaru-mirédin, D. Mangelinck, and D. Blavette, Nucleation of boron clusters in implanted silicon, Journal of Applied Physics, vol.106, issue.11, p.113525, 2009.
DOI : 10.1063/1.3265998

]. S. Solmi and F. Baruffaldi, Diffusion of boron in silicon during post???implantation annealing, Journal of Applied Physics, vol.69, issue.4, p.2135, 1991.
DOI : 10.1063/1.348740

T. Philippe and D. Blavette, Minimum free-energy pathway of nucleation, The Journal of Chemical Physics, vol.135, issue.13, p.135, 2011.
DOI : 10.1063/1.3644935

T. Philippe and D. Blavette, Nucleation pathway in coherent precipitation, Philosophical Magazine, vol.66, issue.36, 2011.
DOI : 10.1016/S1359-6454(00)00060-4
URL : https://hal.archives-ouvertes.fr/hal-00744824

T. Philippe, S. Duguay, D. Mathiot, and D. Blavette, Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon co-implantation, JAP, vol.109, p.23501, 2011.

W. Lefebvre, T. Philippe, and F. Vurpillot, Application of Delaunay tessellation for the characterization of solute-rich clusters in atom probe tomography, Ultramicroscopy, vol.111, issue.3, pp.200-206, 2011.
DOI : 10.1016/j.ultramic.2010.11.034

S. Duguay, T. Philippe, F. Cristiano, and D. Blavette, Direct imaging of boron segregation to extended defects in silicon, Applied Physics Letters, vol.97, issue.24, pp.97-242104, 2010.
DOI : 10.1063/1.3526376

T. Philippe, M. Gruber, F. Vurpillot, and D. Blavette, Clustering and Local Magnification Effects in Atom Probe Tomography: A Statistical Approach, Microscopy and Microanalysis, vol.48, issue.05, pp.643-648, 2010.
DOI : 10.1063/1.2194089

T. Philippe, S. Duguay, and D. Blavette, Clustering and pair correlation function in atom probe tomography, Ultramicroscopy, vol.110, issue.7, pp.862-865, 2010.
DOI : 10.1016/j.ultramic.2010.03.004

T. Philippe, O. Cojocaru-mirédin, S. Duguay, and D. Blavette, Clustering and nearest neighbour distances in atom probe tomography: the influence of the interfaces, Journal of Microscopy, vol.95, issue.8, pp.72-77, 2010.
DOI : 10.1111/j.1365-2818.2009.03359.x

S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, R. Lardé et al., Evidence of atomic-scale arsenic clustering in highly doped silicon, Journal of Applied Physics, vol.106, issue.10, p.106102, 2009.
DOI : 10.1063/1.3257178

T. Philippe, F. De-geuser, S. Duguay, W. Lefebvre, O. Cojocaru-mirédin et al., Clustering and nearest neighbour distances in atom-probe tomography, Ultramicroscopy, vol.109, issue.10, pp.1304-1309, 2009.
DOI : 10.1016/j.ultramic.2009.06.007
URL : https://hal.archives-ouvertes.fr/hal-00457542

T. Philippe, S. Duguay, J. J. Grob, D. Mathiot, and D. Blavette, Atomic-scale study of the role of carbon on boron clustering, Thin Solid Films, vol.518, issue.9, pp.2406-2408, 2010.
DOI : 10.1016/j.tsf.2009.08.022
URL : https://hal.archives-ouvertes.fr/hal-00409615