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Précipitation du bore dans le silicium : expérience, méthodologie et modélisation

Abstract : Interactions between dopants and implantation defects modify the boron redistribution in implanted silicon during annealing. Moreover, boron precipitation can occur in super-saturated regions. Theses phenomenon entail boron electrical deactivation. This manuscript particularly deals with boron precipitation with a focus on the composition of boron clusters. The first stages of boron precipitation are investigated in atom probe tomography. Statistical tools are developed for data treatment of atom probe tomography. Non classical nucleation theories are used to understand the formation of dilute clusters. A model coupling diffusion and classical nucleation theory is developed to predict the evolution of boron concentration profile in implanted silicon during annealing.
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Submitted on : Tuesday, December 6, 2011 - 11:42:21 AM
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  • HAL Id : tel-00648694, version 1


Thomas Philippe. Précipitation du bore dans le silicium : expérience, méthodologie et modélisation. Science des matériaux [cond-mat.mtrl-sci]. Université de Rouen, 2011. Français. ⟨tel-00648694⟩



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