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Etude de l' effet de l'énergie des ions lourds sur la sensibilité des composants électroniques

Mélanie Raine 1
1 DPTA - Département de Physique Théorique et Appliquée
DAM/DIF - DAM Île-de-France : DAM/DIF
Abstract : This thesis studies the sensitivity of advanced electronic devices in radiative environments. The work deals with the detailed modeling of the deposited energy induced by heavy-ion in matter, and the influence of taking it into account in the tools simulating the response of irradiated devices. To do so, a simulation chain was developed, combining different calculation codes at various scales. In a first step, the particle-matter interaction code Geant4 is used to model the heavy ion track. These tracks are then implemented in a TCAD simulator, in order to study the response of elementary transistors to these detailed energy deposits. This step is completed with experimental measurements. Finally, the study is extended to the circuit level, by interfacing the heavy ion tracks with a SEE prediction tool. These different steps evidence the need for taking into account the radial extension of the ion track to all simulation levels, to adequately model the response of advanced devices under heavy ion irradiations.
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Submitted on : Thursday, December 1, 2011 - 6:16:36 PM
Last modification on : Tuesday, April 16, 2019 - 6:44:52 AM
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  • HAL Id : tel-00647328, version 1




Mélanie Raine. Etude de l' effet de l'énergie des ions lourds sur la sensibilité des composants électroniques. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2011. Français. ⟨NNT : 2011PA112168⟩. ⟨tel-00647328⟩



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