89 3.1. Introduction, ., p.93 ,
Qualification des empilements avec une barrière thermique supérieure, ., p.125 ,
135 1.3. Vers l'intégration du complexe CuTCNQ dans des éléments mémoires, p.140 ,
158 3.1.1. Nanocristaux de CuTCNQ recouverts d'une électrode d'aluminium 158 3.1.2. Films denses de CuTCNQ recouverts d'une électrode d'aluminium, p.161 ,
« Ferroelectric random access memories », Nanoelectronics and Information Technology, p.565, 2003. ,
le spin s'invite en électronique », Images de la Physique, Edition du CNRS, Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation », IEEE Proc. of Non-Volatile Memory Technology Symposium, pp.192-94, 2005. ,
Improvement of resistance switching characteristics in NiO films obtained from controlled Ni oxidation, 2007 Non-Volatile Memory Technology Symposium, p.1, 2007. ,
DOI : 10.1109/NVMT.2007.4389934
Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer, ESSDERC 2008, 38th European Solid-State Device Research Conference, p.218, 2008. ,
DOI : 10.1109/ESSDERC.2008.4681737
Future Outlook of NAND Flash Technology for 40nm Node and Beyond, 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop, p.9, 2006. ,
DOI : 10.1109/.2006.1629474
Nanoscale Memory Elements Based on Solid-State Electrolytes, IEEE Transactions On Nanotechnology, vol.4, issue.3, p.331, 2005. ,
DOI : 10.1109/TNANO.2005.846936
Technologies mémoires émergentes : panorama et perspectives », L'actualité Composants du CNES, 2008. ,
A truly universal memory ?, spintec.fr/Magnetic-Random-Access-Memories-M.html [Ovs68] Ovshinsky S.R., « Reversible Electrical Switching Phenomena in Disordered Structures, p.1450, 1968. ,
Electrical switching and memory phenomena in Cu???TCNQ thin films, Applied Physics Letters, vol.34, issue.6, p.405, 1979. ,
DOI : 10.1063/1.90814
Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions, IEEE Transactions on Magnetics, vol.40, issue.4, p.2625, 2004. ,
DOI : 10.1109/TMAG.2004.830395
Phase-change random access memory: A scalable technology, IBM Journal of Research and Development, vol.52, issue.4.5, p.465, 2008. ,
DOI : 10.1147/rd.524.0465
Crossover in heating regimes of thermally assisted magnetic memories, Journal of Applied Physics, vol.99, issue.8, pp.8-904, 2006. ,
DOI : 10.1063/1.2165581
From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures, 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), p.1, 2008. ,
DOI : 10.1109/NVMT.2008.4731190
Resistance switching of CuTCNQ nanowires developed for high-density memory devices, 2007 Non-Volatile Memory Technology Symposium, p.45, 2007. ,
DOI : 10.1109/NVMT.2007.4389943
une mémoire embarquée quasi-non-volatile à faible tension d'alimentation, 2008. ,
Architectures innovantes de mémoires non volatiles embarquées, Thèse de l, 2009. ,
Byung-Il Ryu, « A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC Applications: Electrical Characterization for High Performance Transistor and Embedded Memory Applications, IEEE Proc. of VLSI Technology, p.48, 2006. ,
A New 40-nm SONOS Structure Based on Backside Trapping for Nanoscale Memories, A new 40nm SONOS Structure Based on Back side trapping for Nanoscale Memories, p.581, 2005. ,
DOI : 10.1109/TNANO.2005.851416
« A NAND type Flash memory using impact ionization generated substrata hot electron programming (>20Mb/s) and hot hole erasing, IEEE Proc. of Int. Electron Devices Meeting, 2007. ,
sandwiches, Physical Review B, vol.63, issue.5, p.54416, 2001. ,
DOI : 10.1103/PhysRevB.63.054416
Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells, Journal of Applied Physics, vol.99, issue.8, pp.8-901, 2006. ,
DOI : 10.1063/1.2162813
le spin s'invite en électronique », Images de la Physique, Edition du CNRS « Transmission electron microscopy study on the polycrystalline CoFeB/MgO/CoFeB based magnetic tunnel junction showing a high tunneling magnetoresistance, predicted in single crystal magnetic tunnel junction, www.cnrs.fr/publications, p.13907, 2004. ,
Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory, Journal of Physics: Condensed Matter, vol.19, issue.16, p.165209, 2007. ,
DOI : 10.1088/0953-8984/19/16/165209
« 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions, Appl. Phys. Lett, vol.86, p.92502, 2005. ,
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature, Japanese Journal of Applied Physics, vol.44, issue.No. 19, p.587, 2005. ,
DOI : 10.1143/JJAP.44.L587
Tunneling between ferromagnetic films, Physics Letters A, vol.54, issue.3, p.225, 1975. ,
DOI : 10.1016/0375-9601(75)90174-7
Switching and reliability issues of magnetic tunnel junctions for high-density memory device, Current Applied Physics, vol.6, issue.1, p.86, 2006. ,
DOI : 10.1016/j.cap.2006.01.018
Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction, Physical Review B, vol.63, issue.22, p.220403, 2001. ,
DOI : 10.1103/PhysRevB.63.220403
Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions, Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions Junctions, p.3273, 1995. ,
DOI : 10.1103/PhysRevLett.74.3273
Exchange bias, Journal of Magnetism and Magnetic Materials, vol.192, issue.2, p.203, 1999. ,
DOI : 10.1016/S0304-8853(98)00266-2
Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase, Crystal structure of GeTe and Ge 2 Sb 2 Te 5 meta-stable phase, p.258, 2000. ,
DOI : 10.1016/S0040-6090(99)01090-1
A truly universal memory ? « Effect of Adjacent Layers on Crystallization and Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junction, Magnetic Random Access Memoriesspintec.fr/Magnetic-Random-Access-Memories-M.html [Par06] Annealing effects on structural and transport properties of RF-sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions, pp.8-901, 2005. ,
« Phase Transformations in Metals and Alloys, 1992. ,
DOI : 10.1007/978-1-4899-3051-4
Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions, Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions, p.2625, 2004. ,
DOI : 10.1109/TMAG.2004.830395
Effect of film roughness in MgO-based magnetic tunnel junctions, Applied Physics Letters, vol.88, issue.18, p.182508, 2006. ,
DOI : 10.1063/1.2201547
Modulation of interlayer exchange coupling by ion irradiation in magnetic tunnel junctions, Journal of Physics: Condensed Matter, vol.20, issue.5, p.55219, 2008. ,
DOI : 10.1088/0953-8984/20/5/055219
Non-volatile magnetic random access memories (MRAM), Comptes Rendus Physique, vol.6, issue.9, p.1013, 2005. ,
DOI : 10.1016/j.crhy.2005.10.007
Crossover in heating regimes of thermally assisted magnetic memories, Journal of Applied Physics, vol.99, issue.8, pp.8-904, 2006. ,
DOI : 10.1063/1.2165581
Crystallization of Amorphous CoFeB Ferromagnetic Layers in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions, Crystallization of Amorphous CoFeB Ferromagnetic Layers in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions, p.623, 2007. ,
DOI : 10.1143/JJAP.46.L623
Direct imaging of the structural change generated by dielectric breakdown in MgO based magnetic tunnel junctions, Direct imaging of the structural change generated by dielectric breakdown in MgO based magnetic tunnel junctions, p.152508, 2008. ,
DOI : 10.1063/1.3001934
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling, Applied Physics Letters, vol.83, issue.1 ,
DOI : 10.1063/1.1590740
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions, Nature Materials, vol.34, issue.12, p.868, 2004. ,
DOI : 10.1126/science.1071300
tunnel junctions, Physical Review B, vol.70, issue.17, p.172407, 2004. ,
DOI : 10.1103/PhysRevB.70.172407
A comprehensive model for bipolar electrical switching of CuTCNQ memories, Applied Physics Letters, vol.91, issue.26, pp.263507-263508, 2007. ,
DOI : 10.1063/1.2827590
Scanning electron microscopy investigation of Cu???TCNQ micro/nanostructures synthesized via vapor-induced reaction method, Micron, vol.36, issue.3, p.267, 2005. ,
DOI : 10.1016/j.micron.2004.12.006
« Synthesis morphology and electrical characterization of Ag-TCNQ -from thin films to nanowires », Rev, Adv. Mater. Sci, vol.5, p.72, 2003. ,
Contact effects in Cu(TCNQ) memory devices, Contact effects in Cu(TCNQ) memory devices, p.647, 2008. ,
DOI : 10.1002/pssa.200723418
New Insight into the Nature of Cu(TCNQ):?? Solution Routes to Two Distinct Polymorphs and Their Relationship to Crystalline Films That Display Bistable Switching Behavior, Inorganic Chemistry, vol.38, issue.1, p.144, 1999. ,
DOI : 10.1021/ic9812095
Characterization of Cu-CuTCNQ-M devices using scanning electron microscopy and scanning tunneling microscopy, Chemistry of Materials, vol.5, issue.1, p.54, 1993. ,
DOI : 10.1021/cm00025a013
Raman study of the mechanism of electrical switching in Cu TCNQ films, Mechanism of Electrical Switching in CuTCNQ Films, p.561, 1982. ,
DOI : 10.1016/0038-1098(82)90608-1
Preparation and characterisation of amorphous Cu:7,7,8,8-Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition, Thin Solid Films, vol.515, issue.4, p.1893, 2006. ,
DOI : 10.1016/j.tsf.2006.07.028
On the origin of bistable resistive switching in metal organic charge transfer complex memory cells, Applied Physics Letters, vol.91, issue.8 ,
DOI : 10.1063/1.2772191
Multifaceted Study of CuTCNQ Thin-Film Materials. Fabrication, Morphology, and Spectral and Electrical Switching Properties, Chemistry of Materials, vol.8, issue.12, p.2779, 1996. ,
DOI : 10.1021/cm9602656
Particle-Size Control and Patterning of a Charge-Transfer Complex for Nanoelectronics, Particle-Size Control and Patterning of a Charge-Transfer Complex for Nanoelectronics, p.2953, 2005. ,
DOI : 10.1002/adma.200500809
Field Emission Properties of Large-Area Nanowires of Organic Charge-Transfer Complexes, Journal of the American Chemical Society, vol.127, issue.4, p.1120, 2005. ,
DOI : 10.1021/ja0438359
« Organic CuTCNQ non-volatile memories for integration in the CMOS backend-ofline: Preparation from gas/solid reaction and downscaling to an area of 0, Solid-State Electron, vol.25, issue.50 4, p.601, 2006. ,
Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories, Applied Physics Letters, vol.89, issue.22, pp.223501-223502, 2006. ,
DOI : 10.1063/1.2388883
Nonvolatile Cu???CuTCNQ???Al memory prepared by current controlled oxidation of a Cu anode in LiTCNQ saturated acetonitrile, Applied Physics Letters, vol.88, issue.24, pp.242105-242106, 2006. ,
DOI : 10.1063/1.2213971
« Method and solution for growing a charge-_transfer complex salt onto a metal surface, 2008. ,
Phase, Morphology, and Particle Size Changes Associated with the Solid???Solid Electrochemical Interconversion of TCNQ and Semiconducting CuTCNQ (TCNQ = Tetracyanoquinodimethane), Chemistry of Materials, vol.15, issue.19, p.3573, 2003. ,
DOI : 10.1021/cm0341336
Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition, Applied Physics Letters, vol.83, issue.6, p.1252, 2003. ,
DOI : 10.1063/1.1600848
Electrical switching and memory phenomena in Cu???TCNQ thin films, Applied Physics Letters, vol.34, issue.6, p.405, 1979. ,
DOI : 10.1063/1.90814
Polarized memory effect in the device including the organic charge???transfer complex, copper???tetracyanoquinodimethane, Journal of Applied Physics, vol.68, issue.12, p.6535, 1990. ,
DOI : 10.1063/1.346832
The preparation, characterization of amorphous Cu???TCNQ film with a low degree of charge-transfer (DCT) and its electric switching properties, Thin Solid Films, vol.301, issue.1-2, p.192, 1997. ,
DOI : 10.1016/S0040-6090(96)09571-5
« Characterization and electrical switching properties of Cu-tetracyanoquinodimethane films formed under different conditions, Journal of Materials Science Letters, vol.17, issue.9, p.719, 1998. ,
DOI : 10.1023/A:1006642307750
Direct formation of CuTCNQ complex salts with dual deposition, Thin Solid Films, vol.247, issue.2, p.148, 1994. ,
DOI : 10.1016/0040-6090(94)90791-9
« From micrometric to nanometric scale switching of CuTCNQbased non-volatile memory structures, IEEE Proc. of Non-Volatile Memory Technology Symposium, p.1, 2008. ,
« Resistance switching of CuTCNQ nanowires developed for high-density memory devices, IEEE Proc. of Non-Volatile Memory Technology Symposium, p.1, 2007. ,
Directed Integration of Tetracyanoquinodimethane-Cu Organic Nanowires into Prefabricated Device Architectures, Directed Integration of Tetracyanoquinodimethane-Cu Organic Nanowires into Prefabricated Device Architectures, p.2184, 2006. ,
DOI : 10.1002/adma.200600621
Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode, 2009 IEEE International Memory Workshop, pp.25-27, 2009. ,
DOI : 10.1109/IMW.2009.5090606
From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures, 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), pp.1-4, 2008. ,
DOI : 10.1109/NVMT.2008.4731190
« Resistance switching of CuTCNQ nanowires developed for high-density memory devices, IEEE Proc. of Non-Volatile Memory Technology Symposium, pp.45-48, 2007. ,
« Performances of resistive switching NiO films deposited on top of W or Cu pillar bottom electrode, 10 th annual Non Volatile Memory Technology Symposium, 2009. ,
Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode, 2009 IEEE International Memory Workshop, 2009. ,
DOI : 10.1109/IMW.2009.5090606
« Engineering of electrode materials for NiO resistive switching non volatile memories, Symposium H "Materials and Physics for Nonvolatile Memories, 2009. ,
From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures, 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2008. ,
DOI : 10.1109/NVMT.2008.4731190
« Resistive switching in CuTCNQ-based non-volatile memory structures, Innovative Mass-Storage Technologies, 2008. ,
Metrology and reliability of tunnel junctions developed for thermally assisted magnetic memories », 10 th technical and scientific meeting ARCSIS on "Yield and reliability: challenges and process improvements, 2007. ,
« Ultra thin layers metrology by transmission electron microscopy », 10 th technical and scientific meeting ARCSIS on "Yield and reliability: challenges and process improvements, 2007. ,
« Reliability of tunnel junctions developed for thermally assisted magnetic memories, th annual Non Volatile Memory Technology Symposium, 2007. ,
« Microstructure and switching characteristics of CuTCNQ nanowires developed for high-density memory devices, th annual Non Volatile Memory Technology Symposium, 2007. ,
8,8'-tetracyanoquinodimethane as memory material for resistive switching memories, 2007. ,
Evaluation de techniques de microscopie électronique en transmission pour l'analyse de couches ultra-minces pour la microélectronique, Présentations par poster dans des conférences nationales JNRDM, Journées Nationales du Réseau Doctoral en Microélectronique, 2008. ,
Analyse de défaillance de mémoires non volatiles : Influence de la préparation d'échantillons sur les observations en microscopie électronique en transmission, èmes Rencontres Technologiques Matériaux Innovants et Procédés Associés, 2006. ,