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La lithographie par double impression pour les noeuds technologiques avancés

Abstract : As the lithography EUV is not yet ready to be used for semi-conductor business needs, the double patterning lithography is a promising solution to print sub 22nm node features. The principle of the double patterning is the pitch splitting also named as the coloring of a given circuit layer's features. Two adjacent features must be assigned opposite masks or opposite colors corresponding to different exposures, if their pitch is less than the minimum resolvable pitch. However, features with pitches larger than the critical one are not critical and could be assigned to one of the two masks for density balance. In this thesis, we developed a new split called “optical split” based on the diffractive orders analysis in the pupil plane. The optical split optimizes the non critical contacts affiliation to one of the two exposure masks. The goal of the optical split is to enhance the lithographic performances of the generated masks in order to improve the double patterning process printing. In order to validate the optical split, we apply it on contact layer of the 22nm node logic.
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Submitted on : Monday, October 31, 2011 - 9:22:19 AM
Last modification on : Thursday, November 19, 2020 - 3:52:11 PM
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  • HAL Id : tel-00637169, version 1



Nassima Zeggaoui. La lithographie par double impression pour les noeuds technologiques avancés. Autre. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT047⟩. ⟨tel-00637169⟩



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