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Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations

Abstract : In this thesis we focus on the silicon heterostructure combining thin films amorphous silicon (a-Si :H) deposited at low temperature on crystalline silicon (c-Si) substrates. We study the different materials and the interface between them through both characterizations, modelling and numerical simulations. The goal is to better understand the influence of the different parameters (doping level, defects density, band offset, ...) on the photovoltaic solar cell's performances in order to get them improved. Structures with multicrystalline silicon substrates are also studied.
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Submitted on : Monday, October 24, 2011 - 5:57:33 PM
Last modification on : Tuesday, May 14, 2019 - 1:31:27 PM
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  • HAL Id : tel-00635222, version 1

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Wilfried Favre. Silicium de type n pour cellules à hétérojonctions : caractérisations et modélisations. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2011. Français. ⟨NNT : 2011PA112179⟩. ⟨tel-00635222⟩

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