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J. Arnould and P. Merle, Dispositifs de l'électronique de puissance, Liste des publications Conférences internationales

H. Tahir, A. Bourennane, J. Sanchez, M. Breil, and P. Austin, « A current and voltage bidirectional IGBT based on a Si/Si wafer bonding technique ». International Seminar of Power Semiconductor, Aout, pp.27-29, 2008.

H. Tahir, A. Bourennane, E. Imbernon, and J. Sanchez, Realization and characterization of a current and voltage bidirectional IGBT ». International Seminar of Power Semiconductor (ISPS'10, pp.1-3

H. Tahir, A. Bourennane, J. Sanchez, M. Breil, and J. , Crébier « A vertical monolithically integrated bidirectional IGBT having all the electrodes on the front side», pp.1-3, 2010.

H. Tahir, A. Bourennane, J. Sanchez, G. Sarrabayrouse, and E. , Imbernon « A monolithically integrated bidirectional IGBT: effect of spatial IGBT elementary cells repartitioning and technology of realization on device performance. ». Power Electronics and Motion Control Conference, pp.1-3, 2010.

A. Bourennane, H. Tahir, J. Sanchez, E. Imbernon, and G. L. , Pont Sarrabayrouse « High temperature wafer bonding technique for the realization of a voltage and current bidirectional IGBT», International Symposium on Power semiconductor Devices and ICs, pp.23-26, 2011.

H. Tahir, A. Bourennane, J. Sanchez, L. Pont, and G. , Sarrabayrouse « A monolithically integrated vertical bidirectional IGBT having all the main electrodes on the front side». EPE'11