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Conception et réalisation de structures IGBTs bidirectionnelles en courant et en tension

Hakim Tahir 1
1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : The research work carried-out within the framework of this thesis deals with the design and realization of voltage and current bidirectional IGBT structures. These monolithic MOS controlled ac switches are intended to replace triac structures that are current controlled devices requiring moderate amount of control power compared to voltage controlled devices. We initially analyzed the main bi-directional voltage-controlled structures proposed in literature to determine their advantages and limitations. We then studied, designed and realized the current and voltage bidirectional IGBT structure. The study by 2D simulations is used to assess the influence of technological and geometrical parameters on conduction and switching performance of the bidirectional IGBT. Two techniques of the device realization have been proposed and incorporated in the LAAS flexible IGBT process flow. The first technique is based on the double side photolithography and the second technique is based on the direct Si/Si wafer bonding. A thorough analysis of both techniques allowed us to highlight the advantages and drawbacks of each technique. Finally, we proposed another current and voltage bidirectional MOS controlled switch having its power electrodes and its MOS sections on one side of the wafer. This arrangement makes it possible to overcome the packaging constraint encountered in some bidirectional devices and it makes it also easier to access the MOS control gates. Moreover, the current, in the structure, flows vertically which allows the device to carry high currents. This original architecture should facilitate, using techniques of 3D interconnection, the integration in package of the power device with its control circuit. An analysis of the operating modes of the structure is performed using 2D simulations and the technological processes for the realization of such a device are also provided and discussed.
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Submitted on : Friday, October 21, 2011 - 10:57:27 AM
Last modification on : Thursday, June 10, 2021 - 3:02:19 AM
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  • HAL Id : tel-00634449, version 1


Hakim Tahir. Conception et réalisation de structures IGBTs bidirectionnelles en courant et en tension. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2011. Français. ⟨tel-00634449⟩



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