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Simulation du parcours des électrons élastiques dans les matériaux et structures. Application à la spectroscopie du pic élastique multi-modes MM-EPES

Abstract : EPES (Elastic Peak Electron Spectroscopy) allows measuring the percentage he of elastically backscattered electrons from the surface excited by an electron beam. This is a non destructive method which is very sensitive to the surface region. The aim of this work is to model the trajectory of elastic electrons in the matter with a computer simulation based on Monte Carlo method. This simulation allows interpreting experimental results of the EPES spectroscopy. We have moreover adapted this simulation for different surfaces transformed to micrometer and nanometer scales. Using an original method, based on a description of material layer by layer, I realized a computer program (MC1) that takes into account the path of elastic electrons in different layers of material. The number of electrons emerging from the surface depends on many parameters such as: the electron primary energy, the nature of the material, the incidence angle and the collection angles of the analyzer. In addition, I was interested in the effect of surface roughness and I showed that it plays an important role in the intensity of the elastic peak. Then, through an association of the EPES and the Monte Carlo simulation results, I deduced the growth patterns of gold on silver and copper substrates. The effects of the atomic arrangement and the surface excitations were then studied. For this, a new simulation MC2 that takes into account these two parameters has been developed to study nanoscale surfaces. These parameters not previously included in our MC1simulation play a important role in the elastic intensity. Then I have got a simple formula for interpreting the results obtained by the simulation for a RFA analyzer. To validate the different results of the simulation MC2, I realized nano-structured silicon surfaces, using aluminium oxide masks. Nano-pores have been created by Ar+ ions bombardment in UHV chamber on silicon surfaces.To control the morphology of the surfaces, I realized SEM images (Techinauv Casimir) ex-situ. The Monte Carlo simulations, developed here, associated with the EPES experimental results can estimate the depth, the diameter, the morphology of pores without the help of other ex-situ techniques.
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Samir Chelda. Simulation du parcours des électrons élastiques dans les matériaux et structures. Application à la spectroscopie du pic élastique multi-modes MM-EPES. Autre. Université Blaise Pascal - Clermont-Ferrand II, 2010. Français. ⟨NNT : 2010CLF22076⟩. ⟨tel-00629659⟩

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