Etude et extension de la gamme de température de fonctionnement des Mémoires Magnétiques à Accès Aléatoire Assistées Thermiquement

Abstract : This work present some of the efforts realised in order to transfer the Thermally Assisted Switching MRAM technology between Spintec Laboratory and Crocus-Technology. The main goal of this study was to find the solutions allowing functionality of TAS-MRAM over a large range of temperature. The storage of information in TAS-MRAM rely on the pinning of a ferromagnetic thin film by an anti-ferromagnetic material (AF). My work was to study the write processes of TAS-MRAM cells with two AFs, having different thicknesses, first IrMn then FeMn. By using these types of memory cells, we have been able to access very short heating duration so as to study the influence of thermal activation over a range of heating time  from 100µs to 10ns. Our results showed the role of thermal activation on TAS-MRAM write processes for both AFs and all AF thicknesses over the complete range of heating duration that has been explored. They also showed that an increase of AF thickness can increase the thermal stability of the information. Nevertheless, by increasing IrMn thickness, the smaller influence of thermal activation when heating duration is reduced causes the write temperature to reach very high values, that are not desirable for a low consumption and high endurance device. However, FeMn proved himself to be a far better candidate for the realisation of TAS-MRAM by showing thermal stability identical to IrMn as well as a lower write temperature when heating duration is reduced. The results suggest that the lower Néel temperature of FeMn could be the origin of this lower write temperature for shorter heating duration.
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Lucien Lombard. Etude et extension de la gamme de température de fonctionnement des Mémoires Magnétiques à Accès Aléatoire Assistées Thermiquement. Physique [physics]. Université de Grenoble, 2010. Français. ⟨tel-00626314⟩

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