B. J. Baliga, Fundamentals of power semiconductor devices, 2008.
DOI : 10.1007/978-0-387-47314-7

P. Merle, J. D. Arnould, H. Ueda, G. Takagi, and . Kano, Dispositifs de l'électronique de puissance, tome 1" Traité des nouvelles technologies, électronique, Hermes Sciences Publication, avril 1992 A new vertical power MOSFET structure with extremely reduced on-resistance, IEEE Transactions on Electron Devices, vol.32, pp.2-6, 1985.

F. Morancho, H. Tranduc, and P. , The on-resistance limits of high cell density power MOSFET's Le transistor MOS de puissance à tranchées : modélisation et limites de performances, Proc. 21st international conference on microelectronics (mle1'97 Thèse, UPS Toulouse, 1996.

P. Aloisi, Interrupteurs électroniques de puissance Lavoisier Extraction des paramètres des modèles du VDMOS à partir des caractéristiques en commutation ? comparaison avec les approches classiques Ionization Rates for Electrons and Holes in Silicon, Thèse, IN- SA LYON, septembre 2003. [9] A. CHYNOWETH, pp.1537-1540, 1958.

R. J. Van and O. , Transport equations in heavy doped silicon, IEEE Trans. Electron Devices, issue.20, pp.290-298, 1973.

I. Takayanagi, K. Matsumoto, and J. Nakamura, Measurement of electron impact ionization coefficient in bulk silicon under a low???electric field, Journal of Applied Physics, vol.72, issue.5, p.1989, 1992.
DOI : 10.1063/1.351625

W. Wondrak, Physical limits and lifetime limitations of semiconductor devices at high temperatures, Microelectronics Reliability, vol.39, issue.6-7, pp.1113-1120, 1999.
DOI : 10.1016/S0026-2714(99)00158-4

P. L. Dreike, D. M. Fleetwood, D. B. King, D. C. Sprauer, and T. E. Zipperian, An overview of high-temperature electronic device technologies and potential applications, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, vol.17, issue.4, pp.594-609, 1994.
DOI : 10.1109/95.335047

K. Yamaguchi, Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's, IEEE Transactions on Electron Devices, vol.26, issue.7, pp.1068-1074, 1979.
DOI : 10.1109/T-ED.1979.19547

P. Leturcq, Composants semi-conducteurs de puissance bipolaires, pp.1-19, 2001.

R. Singh and J. Baliga, Cryogenic operation of silicon power devices, Kluwer Academic, 1998.
DOI : 10.1007/978-1-4615-5751-7

F. Morancho, Physique et modélisation des composants et des circuits intégrés de puissance, EGEM Hermes Science, 2007.

J. Dorkel, Physique des redresseurs de puissance aux très forts niveaux de courant aspects électroniques et thermiques, 1982.

J. W. Slotboom, H. C. De, and . Graaff, Measurements of bandgap narrowing in Si bipolar transistors, Solid-State Electronics, vol.19, issue.10, p.857, 1976.
DOI : 10.1016/0038-1101(76)90043-5

S. M. Zse, Physics of Semiconductor Devices, 1981.

Y. Okuto, Threshold energy effect on avalanche breakdown voltage in semiconductor junctions " Solide-State Electronics, pp.161-168, 1975.

P. Granadel, Evolution des structures des transistors M.O.S. de puissance vers le domaine des petites dimensions = Evolution of the power MOS transistor structures towards the small dimensions area, Thèse, UPS Toulouse, 1987.

V. Szekely, Identification of RC networks by deconvolution: chances and limits, IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, vol.45, issue.3, pp.244-258, 1998.
DOI : 10.1109/81.662698

A. Ammous, Developing an equivalent thermal model for discrete semiconductor packages, International Journal of Thermal Sciences, vol.42, issue.5, pp.533-539, 2003.
DOI : 10.1016/S1290-0729(02)00053-4
URL : https://hal.archives-ouvertes.fr/hal-00140112

P. Regli, J. Waldmeyer, and W. Fichtner, Static and dynamic thermal characteristics of IGBT power modules, 11th International Symposium on Power Semiconductor Devices and ICs, ISPSD99, pp.37-40, 1999.

W. Habra, Développement de modèles thermiques compacts en vue de la modélisation électrothermique des composants de puissance, Thèse, UPS Toulouse, 2007.

M. Casu, Coupled electro-thermal modeling and optimization of clock networks, Microelectronics Journal, vol.34, issue.12, pp.1175-1185, 2003.
DOI : 10.1016/S0026-2692(03)00208-8

P. Tounsi, Méthodologie de la conception thermique des circuits électroniques hybrides et problèmes connexes, 1992.

H. I. Rosten, C. J. Lasance, and J. D. Parry, The world of thermal characterization according to DELPHI-Part I: Background to DELPHI, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, vol.20, issue.4, pp.384-391, 1997.
DOI : 10.1109/95.650927

Z. Jakopovic, V. Sunde, and Z. Bencic, Electro-thermal modelling and simulation of a power-MOSFET, Automatika, vol.42, pp.71-77, 2001.

H. M. Gutierrez, An integrated environment for the simulation of electrical, thermal and electromagnetic interactions in high-performance integrated circuits " Electrical Performance of Electronic Packaging, pp.217-220, 1999.

W. K. Teichmann, Thermal and Electrical Simulation of Smart Power Circuits by Network Analysis, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., pp.131-134, 2005.
DOI : 10.1109/ISPSD.2005.1487968

T. Leinter, Electro-thermal simulation using a circuit simulator and modified Spice3 semiconductor model library, Proc. MIXDES'98, pp.189-193, 1998.

C. Lallement, F. Pecheux, and Y. Herve, VHDL-AMS design of a MOST model including deep submicron and thermal-electronic effects, Proceedings of the Fifth IEEE International Workshop on Behavioral Modeling and Simulation. BMAS 2001 (Cat No.01TH8601), pp.91-96, 2001.
DOI : 10.1109/BMAS.2001.962503

J. Alali, Self heating effects in MOSFET circuits: Spice simulation using VHDL- AMS modeling " 5th inter, Conf. MIXDES'98, 1998.

W. Batty, C. Christoffersen, S. David, R. Johnson, and C. Snowden, Fully Analytical Compact Thermal Model of Complex Electronic Power Devices and Packages in Coupled Electrothermal CA, 2002.

Y. Jannot, Cours Transferts thermiques, Ecole de mine Nancy, 2009.

P. Türkes, Electro-thermal simulation of power electronic systems, Microelectronics Journal, vol.29, issue.11, pp.785-790, 1998.
DOI : 10.1016/S0026-2692(97)00092-X

W. Van, P. , B. Geeraerts, W. Sansen, and B. Graindourze, Electrothermal simulation and design of integrated circuits, IEEE Journal of Solid-State Circuits, vol.29, pp.143-146, 1994.

S. Wünsche, Electro-Thermal Circuit Simulation Using Simulator Coupling IEEE Transactions on Very Large Scale Integration (VLSI) Systems, pp.277-282, 1997.

P. Tounsi, New method for electrothermal simulations: HDTMOS in automotive applications, Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545), pp.111-116, 2004.
DOI : 10.1109/STHERM.2004.1291310

L. Mussard, P. Tounsi, P. Austin, J. Dorkel, and E. Antonini, New electro-thermal modeling method for IGBT power module, BCTM proceedings, pp.301-304, 2004.

A. Galadi, F. Morancho, K. Benhida, and M. M. Hassani, An accurate SPICE-compatible circuit model for power FLYMOSFETs, The European Physical Journal Applied Physics, vol.39, issue.3, pp.219-226, 2007.
DOI : 10.1051/epjap:2007120

M. Napieraslska, Modélisation du transistor VDMOS pour simulation de circuits en electronique de puissance, Thèse, INSA Toulouse, 1991.

J. L. Scott, An accurate model for power DMOSFETs including interelectrode capacitances, IEEE Transactions on Power Electronics, vol.6, 1991.

P. O. Yee and H. P. Lauritzen, SPICE models for power MOSFETs: an update " APEC '88 Applied Power Electronics Conference, pp.281-289, 1988.

P. Fritzson, OpenModelica -A free open-source environment for system modeling, simulation, and teaching, Proc. Computer Aided Control System Design, IEEE International Symposium on Intelligent Control, pp.1588-1595, 2006.

F. Morancho, De nouvelles limites pour le compromis 'résistance passante spécifique/tenue en tension' des composants unipolaires de puissance, 2004.

N. Cezac, Transistor MOS de puissance à faible résistance à l'état passant, Thèse, 2000.

G. M. Dolny, H. R. Ronan, and C. F. Wheatley, A SPICE II subcircuit representation for power MOSFETs using empirical methods, RCA review, vol.46, pp.308-320, 1999.

R. S. Scott and G. A. Franz, An accurate model for power DMOSFETs including interelectrode capacitances, 21st Annual IEEE, Power Electronics Specialists Conference PESC '90 Record, pp.113-119, 1990.

D. Divin, Using Simulation to Estimate MOSFET Junction Temperature in a Circuit Application Technical Papers -International Rectifier, 2007.

C. Batard, Interactions composants-Circuits dans les onduleurs de tension, Caractérisation -Modélisation -Simulation, Thèse, INP Toulouse, 1992.

S. Miller, Ionization Rates for Holes and Electrons in Silicon, Physical Review, vol.105, issue.4, pp.1246-1249, 1957.
DOI : 10.1103/PhysRev.105.1246

D. Tremouilles, Optimisation et modélisation de protection intégrées contre les décharges électrostatique, par l'analyse de la physique mise en jeu, 2004.

A. S. Sedra and K. C. Smith, Microelectronic Circuits, 2004.

H. Feral, Electro-thermo-mechanical simulation of automotive MOSFET transistor, 2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010.
DOI : 10.1109/ESIME.2010.5464597