Very-long wave ternary antimonide superlattice photodiode with 21 ,
Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range, Physica Status Solidi, vol.202, issue.4, pp.647-651, 2005. ,
Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study, Applied Physics Letters, vol.74, issue.14, pp.74-2041, 1999. ,
DOI : 10.1063/1.123750
Sulfide passivation of GaSb/GaInAsSb/GaInAsSb photodiode heterostructures, Semiconductors, vol.31, pp.556-559, 1997. ,
Four-band quantum well infrared photodetector array, Infrared Physics & Technology, vol.44, pp.5-6, 2003. ,
Chalcogenide passivation of III???V semiconductor surfaces, Semiconductors, vol.32, issue.11, pp.1141-1156, 1998. ,
DOI : 10.1134/1.1187580
Sulphur passivation of the InGaAsSb/GaSb photodiodes, Applied Physics Letters, vol.80, issue.7, pp.1303-1305, 2002. ,
DOI : 10.1063/1.1448383
InAs/(GaIn)Sb superlattices : a promising material system for infrared detection" Handbook of Infrared Detection Technologies, Mohamed Henini and Mahijeh Razeghi editeurs, pp.159-189, 2002. ,
Control of the residual doping of InAs/(GaIn)Sb infrared superlattices, Applied Physics Letters, vol.77, issue.11, pp.1659-1661, 2000. ,
DOI : 10.1063/1.1310167
Dependence of type II ???W??? mid-infrared photoluminescence and lasing properties on growth conditions, Journal of Applied Physics, vol.94, issue.3, pp.1347-1355, 2003. ,
DOI : 10.1063/1.1586974
Étude et mise au point des moyens et procédures d'épitaxie part jets moléculaires pour fabriquer des structures VCSEL à base d'antimoniureshigh temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 µm, Thèse de doctorat, pp.268-128, 2004. ,
High-Temperature Operation of InAs???GaAs Quantum-Dot Infrared Photodetectors With Large Responsivity and Detectivity, IEEE Photonics Technology Letters, vol.16, issue.5, pp.1361-1363, 2004. ,
DOI : 10.1109/LPT.2004.825974
Doping effects on intersubband and interband optical transitions in GaSb-InAs superlattices, IEEE Journal of Quantum Electronics, vol.32, issue.2, pp.277-283, 1996. ,
DOI : 10.1109/3.481874
Growth and characterization of InAs/Ga 1-x In x Sb strained-layer superlattices, Applied Physics Letters, issue.15, pp.56-1418, 1990. ,
QWIP detectors and thermal imagers, Comptes Rendus Physique, vol.4, issue.10, pp.1089-1102, 2003. ,
Comparing pseudopotential predictions for InAs/GaSb superlattices, Physical Review B, vol.66, issue.16, 2002. ,
DOI : 10.1103/PhysRevB.66.165307
Sulphur passivation of gallium antimonide surfaces, Applied Physics Letters, vol.65, issue.13, p.1695, 1994. ,
DOI : 10.1063/1.112889
Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide, Journal of Applied Physics, vol.77, issue.9, p.4825, 1995. ,
DOI : 10.1063/1.359407
??????GaSb by hydrogenated amorphous silicon treatment, Journal of Applied Physics, vol.79, issue.6, pp.3246-3252, 1996. ,
DOI : 10.1063/1.361220
The physics and technology of gallium antimonide: An emerging optoelectronic material, Journal of Applied Physics, vol.81, issue.9, pp.5821-5867, 1997. ,
DOI : 10.1063/1.365356
Spectroscopy of the electronic states in InAs quantum dots grown on In x Al 1-x As, InP Physical Review B, vol.69, issue.00115, p.p, 2004. ,
High performance InAs/Ga 1-x In x Sb superlattice infrared photodiodes, Applied Physics Letters, issue.22, pp.71-3251, 1997. ,
La thermographie infrarouge, Tec & Doc, 1999. ,
High resistance narrow band quantum cascade photodetectors, Applied Physics Letters, vol.86, issue.12, 2005. ,
DOI : 10.1063/1.1884257
Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes, Applied Physics Letters, vol.84, issue.12, pp.2037-2039, 2004. ,
DOI : 10.1063/1.1686894
Infrared Absorption and Valence Band in Indium Antimonide, Physical Review, vol.119, issue.2, pp.613-620, 1960. ,
DOI : 10.1103/PhysRev.119.613
Development of mid-wavelength and long-wavelength megapixel portable QWIP imaging cameras ,
Electron-hole recombination in germanium, Phys. Rev, vol.67, p.387, 1952. ,
InAs/GaSb type-II superlattices for high performance mid-infrared detectors, Journal of Crystal Growth, vol.278, pp.198-202, 2005. ,
Exploring optimum growth for high quality InAs/GaSb type-II superlattices, Journal of Crystal Growth, vol.261, issue.4, pp.471-478, 2004. ,
DOI : 10.1016/j.jcrysgro.2003.09.045
Arsenic crosscontamination in GaSb/InAs superlattices, Journal of Crystal Growth, vol.270, pp.3-4, 2004. ,
Demonstration of a 256??256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors, Applied Physics Letters, vol.84, issue.13, pp.2232-2234, 2004. ,
DOI : 10.1063/1.1688000
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K, Applied Physics Letters, vol.82, issue.12, pp.1986-1988, 2003. ,
DOI : 10.1063/1.1540240
URL : https://hal.archives-ouvertes.fr/in2p3-00023215
Digital alloy growth in mixed As/Sb heterostructures, Journal of Crystal Growth, vol.251, issue.1-4, pp.515-520, 2003. ,
DOI : 10.1016/S0022-0248(02)02185-1
As-soak control of the InAs-on-GaSb interface, Journal of Crystal Growth, vol.225, issue.2-4, pp.544-549, 2001. ,
DOI : 10.1016/S0022-0248(01)00950-2
Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature, Journal of Crystal Growth, vol.201, issue.202, pp.864-867, 1999. ,
DOI : 10.1016/S0022-0248(98)01476-6
High detectivity InAs quantum dot infrared photodetectors, High detectivity InAs quantum dot infrared photodetectors, pp.3277-3279, 2004. ,
DOI : 10.1063/1.1719259
A matrix formalism for the Hall effect in multicarrier semiconductor systems, Journal of Applied Physics, vol.86, issue.6, pp.3187-3194, 1999. ,
DOI : 10.1063/1.371187
Improvement of reverse leakage current characteristics of GaSb and Al0.3Ga0.7Sb/GaSb diodes grown by MBE, Solid-State Electronics, vol.37, issue.8, pp.1567-1569, 1994. ,
DOI : 10.1016/0038-1101(94)90167-8
Interband cascade detectors with room temperature photovoltaic operation, Applied Physics Letters, vol.86, issue.10, 2005. ,
DOI : 10.1063/1.1875758
Integrated quantum-well intersubband photodetector and light-emitting diode, Electronics Letters, issue.10, pp.31-832, 1995. ,
GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.10, issue.4, p.1856, 1992. ,
DOI : 10.1116/1.586212
Long-wavelength type-II photodiodes operating at room temperature, IEEE Photonics Technology Letters, vol.13, issue.5, pp.517-519, 2001. ,
DOI : 10.1109/68.920771
Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices, Physical Review B, vol.58, issue.23, pp.15378-15380, 1998. ,
DOI : 10.1103/PhysRevB.58.15378
Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range, Applied Physics Letters, vol.71, issue.10, pp.71-1403, 1997. ,
DOI : 10.1063/1.119906
Dynamics of film growth of GaAs by MBE from Rheed observations, Applied Physics A Solids and Surfaces, vol.118, issue.12, pp.1-8, 1983. ,
DOI : 10.1007/BF00617180
Reduction of surface recombination velocity by chemical treatment, Appl. Phys. Lett, vol.36, pp.76-79, 1980. ,
Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs-GaSb type-II superlattices, Journal of Applied Physics, vol.89, issue.4, pp.2185-2188, 2001. ,
Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures, Vacuum, vol.57, pp.171-178, 2000. ,
Passivation of GaSb by sulfur treatment, Journal of Electronic Materials, vol.4, issue.1, p.7, 1994. ,
DOI : 10.1007/BF02651260
Chemical and electronic properties of sulfur-passivated InAs surfaces, Surface Science, vol.523, issue.3, pp.231-240, 2003. ,
DOI : 10.1016/S0039-6028(02)02411-1
Uncooled long wavelength infrared photon detectors, Infrared Physics & Technology, vol.46, issue.1-2, pp.115-131, 2004. ,
DOI : 10.1016/j.infrared.2004.03.016
Hydrogen and nitrogen plasma treatment effects on surface properties of GaSb and InGaAsSb, Solid-State Electronics, vol.38, pp.1743-1745, 1995. ,
Room temperature InAsSb photovoltaic midinfrared detector, Applied Physics Letters, vol.77, issue.3, pp.397-399, 2000. ,
GaSb/InAs superlattices for infrared FPAs" Handbook of Infrared Detection Technologies, Mohamed Henini and Mahijeh Razeghi editeurs, pp.191-232, 2002. ,
Passivation of InAs???(GaIn)Sb short-period superlattice photodiodes with 10??m cutoff wavelength by epitaxial overgrowth with AlxGa1???xAsySb1???y, Applied Physics Letters, vol.86, issue.17, p.173501, 2005. ,
DOI : 10.1063/1.1906326
Indium surface segregation in AlSb and GaSb, Journal of Crystal Growth, vol.259, issue.1-2, pp.69-78, 2003. ,
DOI : 10.1016/j.jcrysgro.2003.07.010
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection, Journal of Crystal Growth, vol.274, issue.1-2, pp.6-13, 2005. ,
DOI : 10.1016/j.jcrysgro.2004.09.088
URL : https://hal.archives-ouvertes.fr/hal-00327829
Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 µm spectral region, Accepté, 2005. ,
Uncooled InAs???GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range, Electronics Letters, vol.41, issue.6, pp.41-362, 2005. ,
DOI : 10.1049/el:20058045
URL : https://hal.archives-ouvertes.fr/hal-00327783
Infrared detectors: status and trends, Progress in Quantum Electronics, pp.59-210, 2003. ,
DOI : 10.1016/S0079-6727(02)00024-1
InAs 1-x Sb x infrared detectors, Progress in Quantum Electronics, pp.191-231, 1989. ,
Comparison of dark current, responsivity and detectivity in different intersubband infrared photodetectors, Semiconductor Science and Technology, vol.19, issue.1, pp.8-16, 2004. ,
DOI : 10.1088/0268-1242/19/1/002
The theory of quantum-dot infrared phototransistors, Semiconductor Science and Technology, vol.11, issue.5, pp.759-765, 1996. ,
DOI : 10.1088/0268-1242/11/5/018
QWIP or other alternative for third generation infrared systems, Infrared Physics & Technology, vol.44, issue.5-6 ,
DOI : 10.1016/S1350-4495(03)00163-4
Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy, Journal of Crystal Growth, vol.150, pp.1-4, 1995. ,
DOI : 10.1016/0022-0248(95)80061-G
Ten years of QWIP development at Fraunhofer IAF, Infrared Physics & Technology, vol.42, issue.3-5, pp.283-289, 2001. ,
Structural parameters governing properties of GaInSb/InAs infra-red detectors, Microelectronics Journal, vol.32, issue.7, pp.593-598, 2001. ,
DOI : 10.1016/S0026-2692(01)00029-5
Statistics of the Recombinations of Holes and Electrons, Physical Review, vol.87, issue.5, p.835, 1952. ,
DOI : 10.1103/PhysRev.87.835
Proposal for strained type II superlattice infrared detectors, Journal of Applied Physics, vol.62, issue.6, pp.2545-2548, 1987. ,
DOI : 10.1063/1.339468
Origin of antimony segregation in GaInSb/InAs strained-layer superlattices, Physical Review Letters, vol.85, issue.21, pp.4562-4565, 2000. ,
Visualizing Interfacial Structure at Non-Common-Atom Heterojunctions with Cross-Sectional Scanning Tunneling Microscopy, Physical Review Letters, vol.85, issue.14, pp.2953-2956, 2000. ,
DOI : 10.1103/PhysRevLett.85.2953
Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelopefunction approximation, Physical Review B, issue.15, p.69, 2004. ,
Dynamical theory of diffraction applicable to crystals with any kind of small distortion, Acta Crystallographica, vol.15, issue.12, p.1311, 1962. ,
DOI : 10.1107/S0365110X62003473
Theorie Dynamique De La Diffraction Des Rayons X Par Les ,
Bulletin de la Societe Francaise Mineralogie et de Cristallographie, p.469, 1964. ,
Room temperature operation of InAs/AlSb quantum cascade lasers, Applied Physics Letters, vol.85, issue.2, pp.167-169, 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00330416
Réalisation et étude de contacts ohmiques ,
Characterization of ohmic contacts on n- and p-type GaSb, Materials Science and Engineering: B, vol.20, issue.1-2, 1993. ,
DOI : 10.1016/0921-5107(93)90419-N
Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, pp.5815-5875, 2001. ,
DOI : 10.1063/1.1368156
Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors, Journal of Crystal Growth, vol.278, issue.1-4, pp.1-4, 2005. ,
DOI : 10.1016/j.jcrysgro.2004.12.044
Sulfur-passivation mechanism analysis of GaInAsSb photodetectors, J ,