A substrate: structure of type I48 As barrier is doped by silicon with a density of about 3×10 18 cm ?3 , in order to provide electrons to the In 0.53 Ga 0.47 As surface QW (this is the socalled technique of modulation doping [17]). (b) dI/dU spectrum averaged over a 30×30 nm 2 square area at the In 0.53 Ga 0.47 As QW surface, for a QW thickness l = 10 nm. The hatched region represents the band gap. The subband minima (E 1 , E 2 , and E 3 ) found from the spectrum are indicated. Note that the Fermi level (U = 0) is within the first subband. (c) Band diagram along the growth direction z for the Electronic properties of two-dimensional systems, 0.52 Al 0.48 As QW structure. l is the QW thickness. ? is the electron affinity of In 0.53 Ga 0.47 As. ?E C is the CB offset between ,
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DOI : 10.1016/0022-3697(56)90020-8
Effect of a magnetic field on donor impurity levels in InSb, Journal of Physics and Chemistry of Solids, vol.1, issue.3, p.143, 1956. ,
DOI : 10.1016/0022-3697(56)90021-X
List of publications The work presented in this dissertation has led to the following publications Direct measurement of the binding energy and Bohr radius of a single hydrogenic defect in a semiconductor quantum well (submitted to, Phys. Rev. Lett ,
Imaging the percolation of localized states in a multisubband two-dimensional electronic system subject to a disorder potential, Physical Review B, vol.76, issue.19, p.195333, 2007. ,
DOI : 10.1103/PhysRevB.76.195333
Unpinning of the Fermi level at (111)A clean surfaces of epitaxially grown n-type In 0, 53 Ga 0.47 As, 2006. ,
Bound states induced by a single donor in a semiconductor quantum well: A scanning tunneling spectroscopy study, Physica E: Low-dimensional Systems and Nanostructures, vol.40, issue.5 ,
DOI : 10.1016/j.physe.2007.09.030
Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In 0.53 Ga 0.47 As grown by molecular beam epitaxy, J. Cryst. Growth, pp.301-302, 2007. ,
Low-temperature scanning tunneling spectroscopy study of two-dimensional electron systems confined in semiconductor heterostructures, Journal of Physics: Conference Series, vol.61, p.926, 2007. ,
DOI : 10.1088/1742-6596/61/1/184