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Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences

Abstract : In order to fulfil the roadmap for the development of telecommunication and information technologies (TIC), low noise level and very fast semiconductor devices are required. Heterojunction bipolar transistor has demonstrated excellent high frequency performances and becomes a candidate to address TIC roadmap. This work deals with experimental analysis and high frequency noise modelling of Si/SiGe:C HBT (STMicroelectronics tech.) and InP/InGaAs HBT (III-V Lab Alcatel-Thales).Chapter I introduces the basic concepts of HBTs operation and the characterization at high-frequency. This chapter summarizes the high frequency performances of many state-of-the-art HBT technologies. The first part of chapter II describes the two HBT sets, with paying attention on the impact of the base composition (SiGe:C) or the lateral reduction of the device (InGaAs) on static and dynamic performances. Based on TCAD modelling, the second part shows that a 15-25% germanium composition profile in the base is able to reach highest dynamic performances. Chapter III summarizes the static and dynamic results at low temperature, giving a separation of the intrinsic transit times and charging times involved into the performance limitation. Chapter IV presents noise measurements and the derivation of high frequency noise analytical models. These models highlight the impact of the current crowding and the self-heating effects, and the influence of the base-emitter heterojunction on the high frequency noise. According to these models the high frequency noise performances are estimated at low temperature for both HBT technologies.
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https://tel.archives-ouvertes.fr/tel-00604071
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Submitted on : Tuesday, June 28, 2011 - 9:44:13 AM
Last modification on : Wednesday, October 14, 2020 - 4:00:32 AM
Long-term archiving on: : Thursday, September 29, 2011 - 2:21:13 AM

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Eloy Ramirez-Garcia. Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2011. Français. ⟨NNT : 2011PA112082⟩. ⟨tel-00604071⟩

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